BAT18-04

S MD Type Silicon RF Switching Diode BAT18;BAT18-04 BAT18-05;BAT18-06 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Diodes Unit: mm +0.1 2.4-0.1 Features Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Reverse Voltage Forward Current Operating and storage temperature range Junction - ambient Symbol VR IF T op, T stg R th JA Value 35 100 -55 to +150 450 K/W Unit V mA Electrical C haracteristics Ta = 25 Param eter Forward voltage Reverse current Diode capacitance Forward resistance Series inductance Sym bol VF IR CT rf Ls Conditions I F = 100 m A V R = 20 V V R = 20 V, T A = 60 V R = 20 V, f = 1 M Hz I F = 5 m A, f = 100 M Hz 0.75 0.4 2 M in Typ 0.38 M ax 1.2 20 200 1 0.7 nH pF Unit V nA Marking Type Marking BAT18 A2 BAT18-04 AU BAT18-05 AS BAT18-06 AT +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1