BAT64-04W

S MD Type Silicon Schottky Diodes BAT64W;BAT64-04W BAT64-05W;BAT64-06W Diodes Features For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r D io d e re v e rs e v o lta g e F o rw a rd c u rre n t A v e ra g e fo rw a rd c u rre n t (5 0 /6 0 H z , s in u s ) S u rg e fo rw a rd c u rre n t (t T o ta l p o w e r d is s ip a tio n T o ta l p o w e r d is s ip a tio n T o ta l p o w e r d is s ip a tio n J u n c tio n te m p e ra tu re S to ra g e te m p e ra tu re J u n c tio n - a m b ie n t J u n c tio n - a m b ie n t J u n c tio n - a m b ie n t (N o te 1 ) (N o te 1 ) (N o te 1 ) BAT 64W B A T 6 4 -0 4 /0 6 W B A T 6 4 -0 5 W BAT 64W B A T 6 4 -0 4 /0 6 W B A T 6 4 -0 5 W 100m s) BAT 64W , TS B A T 6 4 -0 4 /0 6 W , T S B A R 6 4 -0 5 W , TS 120 111 104 S ym bol VR IF IF A V IF S M P to t P to t P to t Tj T s tg R th J A R th J A R th J A R th J S R th J S R th J S V a lu e 40 250 120 800 250 250 250 150 -5 0 to + 1 5 0 255 290 455 120 155 185 K /W K /W U n it V mA mA mA mW mW mW J u n c tio n - s o ld e rin g p o in t J u n c tio n - s o ld e rin g p o in t J u n c tio n - s o ld e rin g p o in t N o te 1 .P a c k a g e m o u n te d o n e p o xy p c b 4 0 m m 40m m 1 .5 m m / 6 c m 2 C u www.kexin.com.cn 1 S MD Type BAT64W;BAT64-04W BAT64-05W;BAT64-06W E le c tric a l C h a ra c te ris tic s T a = 2 5 P a ra m e te r R e v e rs e c u rre n t S ym bol IR C o n d itio n s VR = 30 V VR = 30 V, TA = 85 IF = 1 m A F o rw a rd v o lta g e VF IF = 1 0 m A IF = 3 0 m A IF = 1 0 0 m A D io d e c a p a c ita n c e CT VR = 1 V, f = 1 MHz 320 380 440 570 4 M in T yp M ax 2 200 350 430 520 750 6 Diodes U n it A mV pF Marking Type Marking BAT64W 63s BAT64-04W 64s BAT64-05W 65s BAT64-06W 66s 2 www.kexin.com.cn