BAT68-04

S MD Type Silicon Schottky Diode BAT68;BAT68-04 BAT68-05;BAT68-06 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Diodes Unit: mm +0.1 2.4-0.1 For mixer applications in VHF/UHF range For high-speed switching application +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r D io d e re v e rs e v o lta g e F o rw a rd c u rre n t T o ta l p o w e r d is s ip a tio n BAT68, TS 77 61 P to t 46 Tj T s tg 150 -5 5 to + 1 5 0 150 mW S ym bol VR IF V a lu e 8 130 U n it V mA B A T 6 8 -0 4 , B A T 6 8 -0 6 ,T S B A T 6 8 -0 5 ,T S J u n c tio n te m p e ra tu re S to ra g e te m p e ra tu re J u n c tio n - s o ld e rin g p o in t(N o te 1 ) BAT68 B A T 6 8 -0 4 , B A T 6 8 -0 6 B A T 6 8 -0 5 N o te R th J S 490 590 690 K /W 1 .F o r c a lc u la tio n o f R th J A p le a s e re fe r to A p p lic a tio n N o te T h e rm a l R e s is ta n c e +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 S MD Type BAT68;BAT68-04 BAT68-05;BAT68-06 Electrical Characteristics Ta = 25 Parameter Breakdown voltage Reverse current Symbol V (BR) IR Conditions I(BR) = 10 VR = 1 V V R = 1 V, TA = 60 Forward voltage Diode capacitance Differential forward resistance VF CT RF IF = 1 mA IF = 10 mA V R = 0 , f = 1 MHz IF = 5 mA, f = 10 kHz 340 318 390 A Min 8 0.1 1.2 340 500 1 10 Typ Max Diodes Unit V A mV pF Marking Type Marking BAT68 83s BAT68-04 84s BAT68-05 85s BAT68-06 86s 2 www.kexin.com.cn