BAT68-04W

S MD Type Silicon Schottky Diode BAT68-04W,BAT68-05W,BAT68-06W Diodes Features For mixer applications in VHF/UHF range For high-speed switching application Absolute M axim um Ratings Ta = 25 Param eter Diode reverse voltage Forward current Total power dissipation Junction tem perature Storage tem perature Junction - soldering point(Note 1) Note 1.For calculation of R thJA please refer to Application Note Therm al Resistance TS 92 Sym bol VR IF P tot Tj T stg R thJS Value 8 130 150 150 -55 to +150 390 K/W Unit V mA mW Electrical Characteristics Ta = 25 Param eter Breakdown voltage Reverse current Sym bol V (BR) IR Conditions I (BR) = 10 VR = 1 V V R = 1 V, T A = 60 Forward voltage Diode capacitance Differential forward resistance VF CT RF IF = 1 m A I F = 10 m A V R = 0 , f = 1 MHz I F = 5 m A, f = 10 KHz 340 318 390 A Min 8 0.1 1.2 340 500 1 10 pF Typ Max Unit V A mV Marking Type Marking BAT68-04W 84s BAT68-05W 85s BAT68-06W 86s www.kexin.com.cn 1