0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BC817A

BC817A

  • 厂商:

    KEXIN(科信)

  • 封装:

  • 描述:

    BC817A - NPN Silicon AF Transistors - Guangdong Kexin Industrial Co.,Ltd

  • 数据手册
  • 价格&库存
BC817A 数据手册
S MD Type NPN Silicon AF Transistors KC817A(BC817A) SOT-23 Transistors Unit: mm For general AF applications. +0.1 2.4-0.1 High collector current. High current gain. Low collector-emitter saturation voltage. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current Base current power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICM IB PD Tj Tstg Rating 50 45 5 500 1 100 310 150 -65 to +150 Unit V V V mA A mA mW Electrical Characteristics Ta = 25 Parameter Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Collector cutoff current Emitter cutoff current KC817A-16 DC current gain * Collector saturation voltage * Base to emitter voltage * Collector-base capacitance Emitter-base capacitance Transition frequency * Pulsed: PW 350 ìs, duty cycle 2% KC817A-25 KC817A-40 VCE(sat) IC = 500 mA, IB = 50 mA VBE(sat) IC = 500 mA, IB = 50 mA CCb Ceb fT VCB = 10 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz IC = 50 mA, VCE = 5 V, f = 100 MHz 6 60 170 hFE IC = 100 mA, VCE = -1 V Symbol VCBO VCEO VEBO ICBO IEBO IC = 10 Testconditons A, IE = 0 Min 50 45 5 100 50 100 100 160 250 160 250 350 250 400 630 0.7 1.2 V V pF pF MHz Typ Max Unit V V V nA A nA IC = 10 mA, IB = 0 IE = 10 A, IC = 0 VCB = 25 V, IE = 0 VCB = 25 V, IE = 0 , TA = 150 VEB = 4 V, IC = 0 Marking NO. Marking KC817A-16 6A KC817A-25 6B KC817A-40 6C +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1
BC817A 价格&库存

很抱歉,暂时无法提供与“BC817A”相匹配的价格&库存,您可以联系我们找货

免费人工找货