BC848W

SMD S MD Type NPN General Purpose Transistor BC846W,BC847W,BC848W Transistors IC Features Low current (max. 100 mA). Low voltage (max. 65 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Junction temperature Storage temperature Operating ambient temperature Thermal resistance from junction to ambient Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tj Tstg Ramb Rth j-a BC846W 80 65 6 BC847W 50 45 6 100 200 200 200 150 -65 to +150 -65 to +150 625 K/W BC848W 30 30 5 Unit V V V mA mA mA mW www.kexin.com.cn 1 SMD Type BC846W,BC847W,BC848W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current BC846W BC847W,BC848W DC current gain BC846AW,BC847AW BC846BW,BC847BW BC847CW Collector-emitter saturation voltage VCE(sat) IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; * Base-emitter saturation voltage VBE(sat) IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA;* Base-emitter voltage Collector capacitance Transition frequency Noise figure * Pulse test: tp 300µs, ä 0.02. VBE CC fT NF IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V VCB = 10 V; IE = Ie = 0;f = 1 MHz VCE = 5 V; IC = 10 mA;f = 100 MHz IC = 200 ìA; VCE = 5 V;RS = 2 kÙ; f = 1 kHz;B = 200 Hz hFE IC = 2 mA; VCE = 5 V Symbol ICBO ICBO IEBO Testconditons VCB = 30 V; IE = 0 VCB = 30 V; IE = 0;Tj = 150 VEB = 5 V; IC = 0 Transistors IC Min Typ Max 15 5 100 Unit nA ìA nA 110 110 110 200 420 180 290 520 90 200 700 900 580 660 450 800 220 450 800 250 600 mV mV mV mV 700 770 3 mV mV pF MHz 10 dB 100 hFE Classification TYPE Marking TYPE Marking TYPE Marking BC846W 1D BC847W 1H BC848W 1M BC846AW 1A BC847AW 1E BC846BW 1B BC847BW 1F BC847CW 1G 2 www.kexin.com.cn