BC858A

S MD Type PNP Transistor KC856A,B/KC857A,B,C/KC858A,B,C (BC856A,B/BC857A,B,C/BC858A,B,C) SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 For Switching and AF Amplifier Applications +0.1 1.3-0.1 Ideally suited for automatic insertion 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter KC856 Collector-Base Voltage KC857 KC858 KC856 Collector-Emitter Voltage KC857 KC858 Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature VEBO IC PC TJ Tstg VCEO VCBO Symbol Rating -80 -50 -30 -65 -45 -30 -5 -0.1 200 150 -65 to +150 V A mW V V Unit +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 S MD Type KC856A,B/KC857A,B,C/KC858A,B,C (BC856A,B/BC857A,B,C/BC858A,B,C) Symbol KC856 Collector-base breakdown voltage KC857 KC858 KC856 Collector-emitter breakdown voltage KC857 KC858 Emitter-base breakdown voltage KC856 Collector cut-off current KC857 KC858 KC856 Collector cut-off current KC857 KC858 Emitter cut-off current KC856A, 857A,858A DC current gain KC856B, 857B,858B KC857C,KC858C Collector-emitter saturation voltage Base-emitter saturation voltage Collector capacitance Transition frequency VCE(sat) IC=-100mA, IB= -5 mA VBE(sat) IC= -100 mA, IB= -5mA Cob fT VCB=-10V,f=1MHz VCE= -5 V, IC= 10mA,f=100MHz 100 hFE VCE= -5V, IC= -2mA IEBO ICEO ICBO VEBO IE= -10ìA, IC=0 VCB= -70 V , IE=0 VCB= -45 V , IE=0 VCB= -25 V , IE=0 VCE= -60 V , IB=0 VCE= -40 V , IB=0 VCE= -25 V , IB=0 VEB= -5 V , IC=0 120 220 420 VCEO Ic= -10 mA, IB=0 VCBO Ic= -10ìA, IE=0 Testconditons Transistors Electrical Characteristics Ta = 25 Parameter Min -80 -50 -30 -65 -45 -30 -5 V V V Typ Max Unit -0.1 A -0.1 A -0.1 250 475 800 -0.5 -1.1 4.5 A V V pF MHz Marking NO. Marking NO. Marking NO. Marking KC856A 3A KC857A 3E KC858A 3J KC856B 3B KC857B 3F KC858B 3K KC857C 3G KC858C 3L 2 www.kexin.com.cn S MD Type KC856A,B/KC857A,B,C/KC858A,B,C (BC856A,B/BC857A,B,C/BC858A,B,C) Typical Characteristics Transistors Fig.1 Static Characteristic Fig.2 DC Current Gain Fig.3 Base Emitter Saturation Voltage Collector Emitter Saturation Voltage Fig.4 Base Emitter ON Voltage Fig.5 Collector Output Capacitance Fig.6 Current Gain Bandwidth Product www.kexin.com.cn 3