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BC859B

BC859B

  • 厂商:

    KEXIN(科信)

  • 封装:

  • 描述:

    BC859B - PNP General Purpose Transistor - Guangdong Kexin Industrial Co.,Ltd

  • 数据手册
  • 价格&库存
BC859B 数据手册
SMD S MD Type PNP General Purpose Transistor BC859,BC860 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Low current (max. 100 mA). Low voltage (max. 45 V). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation * Junction temperature Storage temperature Operating ambient temperature Thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tj Tstg Ramb Rth j-a BC859 -30 -30 -5 -100 -200 -200 250 150 -65 to +150 -65 to +150 500 K/W BC860 -50 -45 Unit V V V mA mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type BC859,BC860 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain BC859B,BC860B BC859C,BC860C Collector-emitter saturation voltage VCE(sat) IC = -10 mA; IB = -0.5 mA IC = -100 mA; IB = -5 mA; Base-emitter saturation voltage *1 VBE(sat) IC = -10 mA; IB = -0.5 mA IC = -100 mA; IB = -5 mA; Base-emitter voltage *2 Collector capacitance Emitter capacitance Transition frequency Noise figure VBE CC Ce fT NF IC = -2 mA; VCE = -5 V IC = -10 mA; VCE = -5 V VCB = -10 V; IE = Ie = 0;f = 1 MHz IC = Ic = 0; VEB = -500 mV; f = 1 MHz VCE = -5 V; IC = -10 mA;f = 100 MHz IC = -200 µA; VCE = -5 V;RS = 2 kÙ; f = 1 kHz;B = 200 Hz 100 -600 Symbol ICBO ICBO IEBO hFE Testconditons VCB = -30 V, IE = 0 VCB = -30 V, IE = 0 , Tj = 150 VEB = -5 V, IC = 0 IC = -2 mA; VCE = -5 V 220 420 Min Transistors IC Typ -1 Max -15 -4 -100 475 800 Unit nA ìA nA -75 -250 -700 -850 -650 -300 -650 mV mV mV mV -750 -820 mV mV pF 4.5 10 MHz 4 dB *1. VBEsat decreases by about -1.7 mV/K with increasing temperature. *2. VBE decreases by about -2 mV/K with increasing temperature. hFE Classification TYPE Marking TYPE Marking BC859B 4B BC860B 4F BC859C 4C BC860C 4G 2 www.kexin.com.cn
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