BC859BW

SMD S MD Type PNP General Purpose Transistor BC859W,BC860W Transistors IC Features Low current (max. 100 mA). Low voltage (max. 45 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Junction temperature Storage temperature Operating ambient temperature Thermal resistance from junction to ambient Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tj Tstg Ramb Rth j-a BC859W -30 -30 -5 -100 -200 -200 200 150 -65 to +150 -65 to +150 625 K/W BC860W -50 -45 Unit V V V mA mA mA mW www.kexin.com.cn 1 SMD Type BC859W,BC860W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current BC859W; BC860W DC current gain BC859BW; BC860BW BC859CW; BC860CW Collector-emitter saturation voltage VCE(sat) IC = -10 mA; IB = -0.5 mA IC = -100 mA; IB = -5 mA; Base-emitter voltage *2 Collector capacitance Emitter capacitance Transition frequency VBE CC Ce fT IC = -2 mA; VCE = -5 V IC = -10 mA; VCE = -5 V IE = ie = 0; VCB = -10 V; f = 1 MHz IC = ic = 0; VEB = -500 mV; f = 1 MHz IC = -10 mA; VCE = -5 V; f = 100 MHz IC = -200 ìA; VCE = -5 V; RS = 2 kÙ;f = 10 Hz to 15.7 kHz IC=-200 ìA; VCE = -5 V; RS = 2 kÙ;f = 1 kHz; B = 200 Hz hFE IC = -2 mA; VCE = -5 V; Symbol ICBO ICBO IEBO Testconditons IE = 0; VCB = -30 V IE = 0; VCB = -30 V; Tj = 150 IC = 0; VEB = -5 V Transistors IC Min Typ Max -15 -4 -100 Unit nA ìA nA 220 220 420 800 475 800 -300 -650 mV mV mV mV pF pF MHz 4 dB 4 600 750 820 5 10 100 Noise figure BC859W; BC860W; BC859BW; BC860BW; BC859CW; BC860CW NF *1. VBEsat decreases by about -1.7 mV/K with increasing temperature. *2. VBE decreases by about -2 mV/K with increasing temperature. hFE Classification TYPE Marking TYPE Marking BC859W 4D BC860W 4H BC859BW 4B BC860BW 4F BC859CW 4C BC860CW 4G 2 www.kexin.com.cn