BC868-25

S MD Type NPN Medium Power Transistor BC868 Transistors Features High current Two current gain selections 1.2 W total power dissipation. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current Peak collector current Peak base current Total power dissipation *1 and *2 *1 and *3 *1 and *4 Storage temperature Junction temperature ambient temperature Thermal resistance from junction to ambient *1 and *2 *1 and *3 *1 and *4 Thermal resistance from junction to solder point *1.Refer to SOT89 standard mounting conditions. *2.Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint. *3.Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2. *4.Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. Rth(j-s) Tstg Tj Tamb Rth(j-a) Ptot Symbol VCBO VCEO VEBO IC ICM IBM Rating 32 20 5 1 2 200 0.5 0.85 1.2 -65 to +150 150 -65 to +150 250 147 104 20 K/W K/W K/W K/W Unit V V V A A mA W W W www.kexin.com.cn 1 SMD Type BC868 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Symbol ICBO Testconditons VCB = 25 V, IE = 0 VCB = 25 V, IE = 0; Tj = 25 Emitter cutoff current DC current gain BC868 hFE IEBO VEB = 5 V, IC = 0 IC = 5 mA; VCE = 10 V IC = 500 mA; VCE = 1 V IC = 1 A; VCE = 1 V BC868-25 Collector-emitter saturation voltage Base to emitter voltage Collector capacitance Transition frequency hFE VCE(sat) VBE CC fT IC = 500 mA; VCE = 1 V IC = 1 A; IB = 100 mA IC = 5 mA; VCE = 10 V IC = 1 A; VCE = 1 V IE = Ie = 0; VCB = 10 V; f = 1 MHz IC = 50 mA; VCE = 5 V; f = 100 MHz Transistors Min Typ Max 100 10 100 Unit nA ìA nA 50 85 60 160 375 500 700 1 22 40 170 mV mV V pF MHz 375 hFE Classification TYPE Marking BC868 CAC BC868-25 CDC 2 www.kexin.com.cn