BC869

S MD Type PNP Medium Power Transistor BC869 Transistors Features High current. Three current gain selections. 1.2 W total power dissipation. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation *1 and *2 *1 and *3 *1 and *4 Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient *1 and *2 *1 and *3 *1 and *4 Thermal resistance from junction to solder point *1.Refer to SOT89 standard mounting conditions. *2.Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint. *3.Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2. *4.Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. Rth(j-s) Rth(j-a) Tstg Tj Ramb Ptot Symbol VCBO VCEO VEBO IC ICM IBM Rating -32 -20 -5 -1 -2 -200 0.5 0.85 1.2 -65 to +150 150 -65 to +150 250 147 104 20 K/W K/W K/W K/W Unit V V V A A mA W W W www.kexin.com.cn 1 SMD Type BC869 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain BC868 hFE Symbol ICBO IEBO Testconditons VCB = -25 V, IE = 0 VCB = -25 V, IE = 0; Tj = 25 VEB = -5 V, IC = 0 IC = -5 mA; VCE = -10 V IC = -500 mA; VCE = -1 V IC = -1 A; VCE = -1 V BC868-16 BC869-25 Collector-emitter saturation voltage Base to emitter voltage Collector capacitance Transition frequency hFE hFE VCE(sat) VBE CC fT IC = -500 mA; VCE = -1 V IC = -500 mA; VCE = -1 V IC = -1 A; IB = -100 mA IC = -5 mA; VCE = -10 V IC = -1 A; VCE = -1 V IE = Ie = 0; VCB = -10 V; f = 1 MHz IC = -50 mA; VCE = -5 V; f = 100 MHz 40 50 85 60 Transistors Min Typ Max -100 -10 -100 Unit nA ìA nA 375 100 160 250 375 -500 -700 -1 28 140 mV mV V pF MHz hFE Classification TYPE Marking BC869 CEC BC869-16 CGC BC869-25 CHC 2 www.kexin.com.cn