BCF32

SMD S MD Type NPN General Purpose Transistors BCF32 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Low current (max. 100 mA). Low voltage (max. 32 V). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation * Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Ramb Rth j-a Rating 32 32 5 100 200 100 250 -65 to +150 150 -65 to +150 500 K/W Unit V V V mA mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type BCF32 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Symbol ICBO ICBO IEBO hFE Testconditons IE = 0; VCB = 32 V IE = 0; VCB = 32 V; Tj = 100 IC = 0; VEB = 5 V IC = 10 ìA; VCE = 5 V IC = 2 mA; VCE = 5 V Collector-emitter saturation voltage VCE(sat) IC = 10 mA; IB = 0.5 mA IC = 50 mA; IB = 2.5 mA Base to emitter saturation voltage Base to emitter voltage Collector capacitance Transition frequency Noise figure VBE(sat) VBE CC fT NF IC = 10 mA; IB = 0.5 mA IC = 50 mA; IB = 2.5 mA IC = 2 mA; VCE = 5 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz IC = 200 ìA; VCE = 5 V; RS = 2 kÙ; 1 kHz; B = 200 Hz f= 100 550 200 Min Transistors IC Typ Max 100 10 100 Unit nA ìA nA 150 450 120 210 750 850 700 2.5 250 mV mV mV mV mV pF MHz 1.2 4 dB Marking Marking D7 2 www.kexin.com.cn