BCP51

S MD Type PNP Medium Power Transistors BCP51,BCP52,BCP53 SOT-223 +0.2 6.50-0.2 Transistors Unit: mm +0.2 3.50-0.2 High collector current 1.3 W power dissipation. +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 base 1 2 2.9 4.6 3 +0.1 0.70-0.1 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage (open emitter) BCP51 BCP52 BCP53 Collector-emitter voltage(open base) BCP51 BCP52 BCP53 Emitter-base voltage( open collector) Collector current Peak collector current Peak base current Total power dissipation Tamb Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient Thermal resistance from junction to solder point 25 VEBO IC ICM IBM Ptot Tstg Tj Ramb Rth(j-a) Rth(j-s) VCEO VCBO Symbol Rating -45 -60 -100 -45 -60 -80 -5 -1 -1.5 -0.2 1.3 -65 to +150 150 -65 to +150 95 14 K/W K/W Unit V V V V V V V A A A W +0.15 1.65-0.15 Features 0.1max +0.05 0.90-0.05 www.kexin.com.cn 1 SMD Type BCP51,BCP52,BCP53 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current Symbol ICBO IEBO Testconditons VCB = -30 V, IE = 0 VCB = -30 V, IE = 0; Tj = 125 VEB = -5 V, IC = 0 IC = -5 mA; VCE = -2 V DC current gain hFE IC = -150 mA; VCE = -2 V IC = -500 mA; VCE = -2 V DC current gain BCP51-10,BCP52-10,BCP53-10 BCP51-16,BCP52-16,BCP53-16 Collector-emitter saturation voltage Base to emitter voltage Transition frequency hFE IC = -150 mA; VCE = -2 V IC = -150 mA; VCE = -2 V VCE(sat) IC = -500 mA; IB = -50 mA VBE fT IC = -500 mA; VCE = -2 V IC = -10 mA; VCE = -5 V; f = 100 MHz Transistors Min Typ Max -100 -10 -100 Unit nA ìA nA 63 63 40 63 100 160 250 -0.5 -1 115 V V MHz 250 2 www.kexin.com.cn