S MD Type
PNP Medium Power Transistor BCP69
SOT-223
Transistors
Unit: mm
+0.2 3.50-0.2
Features
High current. Three current gain selections. 1.4 W total power dissipation.
+0.2 6.50-0.2
0.1max +0.05 0.90-0.05
+0.1 3.00-0.1
+0.2 0.90-0.2 +0.3 7.00-0.3
4
1
2 2.9 4.6
3
+0.1 0.70-0.1
1 base 2 collector 3 emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current Peak base current Total power dissipation *1 *2 *3 Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * *1 *2 *3 Thermal resistance from junction to solder point Rth(j-s) Rth(j-a) 200 125 89 15 K/W K/W K/W K/W Tstg
Tj
Symbol VCBO VCEO VEBO IC ICM IBM
Rating -32 -20 -5 -1 -2 -200
Unit V V V A A mA
Ptot
0.625 1 1.4 -65 to +150 150 -65 to +150
W W W
Tamb
*1 Device mounted on a FR4 PCB; single-sided copper; tinplated; standard footprint -for SOT223. *2 Device mounted on a FR4 PCB; single-sided copper; tinplated; 1 cm2 collector mounting pad. *3 Device mounted on a FR4 PCB; single-sided copper; tinplated; 6 cm2 collector mounting pad.
+0.15 1.65-0.15
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1
SMD Type
BCP69
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain BCP69 VCE = -10 V; IC = -5 mA VCE = -1 V; IC = -500 mA hFE BCP69-16 BCP69-16/IN BCP69-25 Collector-emitter saturation voltage Base-emitter voltage Collector capacitance Transition frequency VCEsat VBE Cc fT IC = -1 A; IB = -100 mA; VCE = -10 V; IC = -5 mA VCE = -1 V; IC = -1 A IE = ie = 0 A; VCB = -10 V; f = 1 MHz IC = -50 mA; VCE = -5 V; f = 100 MHz 40 VCE = -1 V; IC = -500 mA VCE = -1 V; IC = -1 A 50 85 60 100 140 160 Symbol ICBO IEBO Testconditons IE = 0 A; VCB = -25 V IE = 0 A; VCB = -25 V; Tj = 150 IC = 0 A; VEB = -5 V Min
Transistors
Typ
Max -100 -10 -100
Unit nA ìA nA
375
250 230 375 -500 -700 -1 28 140 mV mV V pF MHz
hFE Classification
TYPE Marking BCP69 BCP69 BCP69-16 BCP69/16 BCP69-16/IN 69-16N BCP69-25 BCP69/25
2
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