BCV72

SMD S MD Type NPN General Purpose Transistors BCV71,BCV72 Transistors IC SOT-23 Unit: mm Features Low current (max. 100 mA). +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 Low voltage (max. 60 V). 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Ramb Rth j-a Rating 80 60 5 100 200 200 250 -65 to +150 150 -65 to +150 500 K/W Unit V V V mA mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type BCV71,BCV72 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain BCV71 BCV72 DC current gain BCV71 BCV72 Collector-emitter saturation voltage VCE(sat) IC = 10 mA; IB = 0.5 mA IC = 50 mA; IB = 2.5 mA Base to emitter saturation voltage Base to emitter voltage Collector capacitance Transition frequency Noise figure VBE(sat) VBE CC fT NF IC = 10 mA; IB = 0.5 mA IC = 50 mA; IB = 2.5 mA IC = 2 mA; VCE = 5 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz IC = 200 ìA; VCE = 5 V; RS = 2 kÙ;f = 1 kHz; B = 200 Hz hFE IC = 2 mA; VCE = 5 V Symbol ICBO ICBO IEBO hFE Testconditons IE = 0; VCB = 20 V IE = 0; VCB = 20 V; Tj = 100 IC = 0; VEB = 5 V IC = 10 ìA; VCE = 5 V Transistors IC Min Typ Max 100 10 100 Unit nA ìA nA 90 150 110 200 120 210 750 850 550 2.5 100 10 700 220 450 250 mV mV mV mV mV pF MHz dB hFE Classification TYPE Marking BCV71 K7 BCV72 K8 2 www.kexin.com.cn