BCX56-16

Transistors SMD Type NPN Transistors BCX54,BCX55,BCX56 (KCX54 ,KCX55,KCX56) Features 1.70 0.1 High current (max. 1 A). Low voltage (max. 80 V). 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Symbol Rating VCBO Unit 45 V BCX55 60 V BCX56 100 V BCX54 45 V BCX55 60 V BCX56 80 V BCX54 VCEO VEBO 5 V Collector current IC 1 A Peak collector current ICM 1.5 A Peak base current IBM 0.2 A Total power dissipation Ptot 1.3 W Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature T amb -65 to +150 Thermal resistance from junction to ambient Rth(j-a) 94 K/W Thermal resistance from junction to solder point Rth(j-s) 14 K/W Emitter-base voltage www.kexin.com.cn 1 Transistors SMD Type BCX54,BCX55,BCX56 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO Emitter cutoff current IEBO DC current gain hFE DC current gain BCX54-10,BCX55-10,BCX56-10 hFE BCX54-16,BCX55-16,BCX56-16 VBE Transition frequency fT hFE DC current gain ratio of the complementary pairs hFE hFE Classification 2 TYPE BCX54 BCX54-10 BCX54-16 Marking BA BC BD TYPE BCX55 BCX55-10 BCX55-16 Marking BE BG BM TYPE BCX56 BCX56-10 BCX56-16 Marking BH BK BL www.kexin.com.cn Min Typ Max Unit VCB = 30 V, IE = 0 100 nA VCB = 30 V, IE = 0; Tj = 125 10 uA VEB = 5 V, IC = 0 100 nA IC = 5 mA; VCE = 2 V 63 IC = 150 mA; VCE = 2 V 63 IC = 500 mA; VCE = 2 V 40 IC = 150 mA; VCE = 2 V 63 160 IC = 150 mA; VCE = 2 V 100 250 250 VCE(sat) IC = 500 mA; IB = 50 mA Collector-emitter saturation voltage Base to emitter voltage ■ Typical Characterisitics Testconditions IC = 500 mA; VCE = 2 V IC = 10 mA; VCE = 5 V; f = 100 MHz IC = 150 mA; VCE = 2V 0.5 V 1 V 130 1.3 MHz 1.6