S MD Type
PNP General Purpose Transistors BCX68
SOT-89
+0.1 4.50-0.1 +0.1 1.80-0.1
Transistors
Unit: mm
+0.1 1.50-0.1
+0.1 2.50-0.1
+0.1 0.48-0.1 +0.1 0.53-0.1
Features
High collector current. High current gain. Low collector-emitter saturation voltage.
+0.1 4.00-0.1
+0.1 0.80-0.1
+0.1 0.44-0.1
+0.1 2.60-0.1
+0.1 3.00-0.1
+0.1 0.40-0.1
1. Base 2. Collector 3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation Junction temperature Storage temperature Junction - soldering point Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg RthJS Rating 20 25 5 1 2 100 200 1 150 -65 to +150 20 K/W Unit V V V A A mA mA W
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1
SMD Type
BCX68
Electrical Characteristics Ta = 25
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current DC current gain * Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO hFE Testconditons IC = 30 mA, IB = 0 IC = 10 ìA, IB = 0 IE = 1 ìA, IC = 0 VCB = 25 V, IE = 0 VCB = 25 V, IE = 0 , TA = 150 IC = 500 mA, VCE = 1 V 50 85 DC current gain * hFE IC = 500 mA, VCE = 1 V 85
Transistors
Min 20 25 5
Typ
Max
Unit V V V
100 100
nA ìA
375 100 160 250 160 250 375
100 160 DC current gain * Collector-emitter saturation voltage * Base-emitter voltage Transition frequency * Pulse test: t 300ìs, D = 2%. * hFE VCE(sat) VBE(ON) fT IC = 1A, VCE = 1 V IC = 1 A, IB = 100 mA IC = 5 mA, VCE = 10 V IC = 1 A, VCE = 1 V IC = 100 mA, VCE = 5 V, f = 20 MHz 60
0.5 0.6 1 100 MHz V
hFE Classification
TYPE Marking BCX68 CA BCX68-10 CB BCX68-16 CC BCX68-25 CD
2
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