BSR31

S MD Type PNP Medium Power Transistors BSR30,BSR31,BSR33 SOT-89 +0.1 4.50-0.1 Transistors Unit: mm +0.1 1.50-0.1 Features High current (max. 1 A) Low voltage (max. 80 V). +0.1 0.48-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 +0.1 0.53-0.1 +0.1 4.00-0.1 +0.1 0.80-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 1. Base 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage BSR30,BSR31 BSR33 Collector-emitter voltage BSR30,BSR31 BSR33 Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient Thermal resistance from junction to soldering point VEBO IC ICM IBM Ptot Tstg Tj Ramb Rth(j-a) Rth(j-s) VCEO Symbol VCBO Rating -70 -90 -60 -80 -5 -1 -2 -200 1.35 -65 to +150 150 -65 to +150 93 13 K/W K/W Unit V V V V V A A mA W www.kexin.com.cn 1 SMD Type BSR30,BSR31,BSR33 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * BSR30 BSR31; BSR33 DC current gain * BSR30 BSR31,BSR33 DC current gain * BSR30 BSR31,BSR33 collector-emitter saturation voltage * VCEsat IC = -150 mA; IB = -15 mA IC = -500 mA; IB = -50 mA base-emitter saturation voltage * Transition frequency * Pulse test: tp = 300 ìs; ä 0.01. VBEsat fT IC = -150 mA; IB = -15 mA IC = -500 mA; IB = -50 mA IC = -50 mA; VCE = -10 V; f = 100 MHz hFE IC = -500 mA; VCE = -5 V; hFE IC = -100 mA; VCE = -5 V Symbol ICBO IEBO hFE Testconditons IE = 0; VCB = -60 V IE = 0; VCB = -60 V; Tj = 150 IC = 0; VEB = -5 V IC = -100 mA; VCE = -5 V; 10 30 40 Transistors Min Typ Max -100 -50 -100 Unit nA ìA nA 120 300 100 30 50 -0.25 -0.5 -1 -1.2 100 V V V V MHz hFE Classification TYPE Marking BSR30 BR1 BSR31 BR2 BSR33 BR4 2 www.kexin.com.cn