BSS64

SMD S MD Type NPN General Purpose Amplifier BSS64 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 NPN general purpose amplifier +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Junction temperature Storage temperature Total device dissipation Derate above 25 Thermal resistance, junction to ambient unless otherwise noted Symbol VCE0 VCBO VEBO IC Tj Tstg PD RèJA Rating 80 120 5 200 150 -55 to +150 350 2.8 357 mW mW/ /W Unit V V V mA Electrical Characteristics Ta = 25 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-cutoff current Emitter-base cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Current gain - bandwidth product Output capacitance unless otherwise noted Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Testconditons IC = 4.0 mA, IB = 0 IC = 100 ìA, IE = 0 IE = 100 ìA, IC = 0 VCB = 90 V, IE = 0 VCB = 90 V, IE = 0, TA = 150 VEB = 5.0 V, IC = 0 IC = 10 mA, VCE = 1.0 V IC = 4.0 mA, IB = 400ìA IC = 50 mA, IB = 15 mA IC = 4.0 mA, IB = 400 ìA IC = 4.0 mA, VCE = 10,f = 35 MHz VCB = 10 V, f = 1.0 MHz 60 5 20 0.15 0.2 1.2 V V V MHz pF Min 80 120 5 0.1 50 200 Typ Max Unit V V V ìA ìA nA Marking Marking U3 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1