BSS80B

SMD S MD Type PNP Silicon Switching Transistors BSS80,BSS82 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage. +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation,TS = 77 Junction temperature Storage temperature Junction - soldering point Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg RthJS BSS80 40 60 5 800 1 100 200 330 150 -65 to +150 220 K/W BSS82 60 Unit V V V mA A mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type BSS80,BSS82 Electrical Characteristics Ta = 25 Parameter Collector-emitter breakdown voltage BSS80 BSS82 V(BR)CBO IC = 10 ìA, IE = 0 V(BR)EBO IE = 10 ìA, IC = 0 ICBO IEBO BSS80/82B BSS80/82C BSS80/82B BSS80/82C DC current gain * BSS80/82B BSS80/82C BSS80/82B BSS80/82C BSS80/82B BSS80/82C Collector-emitter saturation voltage * VCE(sat) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Base-emitter saturation voltage Transition frequency Collector-base capacitance Delay time Rise time Storage time Fall time * Pulse test: t 300ìs, D = 2%. * VBE(sat) fT Ccb td tr tstg tf IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 20 mA, VCE = 20 V, f = 100 MHz VCB = 10 V, f = 1 MHz VCC = 30 V, IC = 150 mA, IB1 = 15 mA,VBE(off) = 0.5 V VCC = 30 V, IC = 150 mA, IB1 = 15 mA,VBE(off) = 0.5 V VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA, VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA, IC = 500 mA, VCE = 10 V hFE IC = 10 mA, VCE = 10 V IC = 1 mA, VCE = 10 V VCB = 50 V, IE = 0 VCB = 50 V, IE = 0 , TA = 150 Emitter cutoff current VEB = 3 V, IC = 0 IC = 100 ìA, VCE = 10 V Symbol Testconditons Transistors IC Min 40 60 60 5 Typ Max Unit V V V V(BR)CEO IC = 10 mA, IB = 0 Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current 10 10 10 40 75 40 100 40 100 nA ìA nA IC = 150 mA, VCE = 10 V 40 100 40 50 120 300 0.4 1.6 1.3 2.6 250 6 10 40 80 30 MHz pF ns ns ns ns V hFE Classification TYPE Rank Marking TYPE Rank Marking B CLs B CHs BSS82 C CMs BSS80 C CJs 2 www.kexin.com.cn