BST50

S MD Type NPN Darlington Transistors KST50; KST51; KST52 (BST50; BST51; BST52) SOT-89 Transistors Unit: mm +0.1 1.50-0.1 Features High current (max. 0.5 A) Low voltage (max. 80 V) Integrated diode and resistor. +0.1 0.48-0.1 +0.1 4.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 +0.1 0.53-0.1 +0.1 4.00-0.1 +0.1 0.80-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 3.00-0.1 0.40 1. Base 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter KST50 Collector-base voltage KST51 KST52 KST50 Collector-emitter voltage KST51 KST52 Emitter-base voltage Collector current (DC) Peak collector current base current Power dissipation Tamb 25 * VEBO IC ICM IB PD Rth(j-a) Rth(j-s) Tj Tstg VCEO VCBO Symbol Rating 60 80 90 45 60 80 5 0.5 1.5 100 1.3 96 16 150 -65 to +150 Unit V V V V V V V A A mA W K/W K/W Thermal resistance from junction to ambient * Thermal resistance from junction to solder point Junction temperature Storage temperature * Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2. +0.1 -0.1 www.kexin.com.cn 1 SMD Type KST50; KST51; KST52 (BST50; BST51; BST52) Electrical Characteristics Ta = 25 Parameter KST50 Collector cutoff current KST51 KST52 Emitter cutoff current DC current gain IEBO hFE ICES Symbol Testconditons VBE=0;VCE=45V VBE=0;VCE=60V VBE=0;VCE=80V VEB = 4V, IC = 0 IC = 150mA; VCE = 10 V IC =500 mA; VCE = 10V Collector-emitter saturation voltage Base to emitte rsaturation voltage turn-on time turn-off time Transition frequency VCE(sat) IC = 500 mA; IB = 0.5 mA IC = 500 mA; IB = 0.5mA;TJ=150 VBE(sat) IC = 500 mA; IB=0.5mA ton toff fT ICon = 500 mA; IBon = 0.5 mA; IBoff = -0.5 mA IC = 500 mA; VCE = 5 V; f = 100 MHz 1000 2000 Min Transistors Typ Max 50 50 50 50 Unit nA nA nA nA 1.3 1.3 1.9 400 1500 200 V V V ns ns MHz Marking NO. Marking KST50 AS1 KST51 AS2 KST52 AS3 2 www.kexin.com.cn