BT131-800

SMD Type T Thyristor Triacs BT131 Series Unit:mm SOT-223 。 10 6.50±0.2 3.00±0.1 Ƶ Features ƽ VDRM İ 800 V (BT131-800) ƽ IT(RMS) İ 1 A 1 2 0.75 (min) 7.0±0.3 ƽ VDRM İ 600 V (BT131-600) 3.50±0.2 4 3 0.250 2.30 (typ) 0.84 (max) T1 0.02 ~ 0.1 T2 G Gauge Plane 0.66 (min) 1.80 (max) 1.6 ± 0.1 ƽ ITSM İ 12.5 A 1.terminal 1 2.terminal 2 3.gate 4.terminal 2 4.60 (typ) Ƶ Absolute Maximum Ratings Parameter Repetitive Peak off-state Voltage Symbol BT131-600 BT131-800 Circuit Fusing Considerations VDRM IT(RMS) RMS on-state Current Non-Repetitive Peak on-state Current *1 t=20ms t=16.7ms t = 10ms ITSM 2 It T2+ G+ Rate of Rise of on-state Current ITM = 1.5 A; IG = 20mA; dIG/dt = 200 mA/μs T2+ GT2- G- Rating Unit 600 V 800 1 A 12.5 13.8 A 2s 1.28 50 dIT /dt T2- G+ 50 A/μs 50 10 Peak Gate Current IGM 2 Peak Gate Power PGM 5 Average Gate Power PG(AV) 0.1 Thermal Resistance Junction to Ambient *2 Rth j-a 150 TJ 125 Tstg -40 ~ 150 Junction Temperature Storage Temperature Range A W ć/W ć *1: Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/μs. *2: Mounted on a printed-circuit board www.kexin.com.cn 1 SMD Type T Thyristor Triacs BT131 Series Ƶ Electrical Characteristics (Tj = 25ć, unless otherwise noted.) Parameter Symbol BT131-600 Repetitive Peak off-state Voltage BT131-800 Gate Trigger Current IDRM =50μA Min Max 600 0.4 3 T2+ G- 1.3 3 1.4 3 T2- G+ 3.8 7 T2+ G+ 1.2 5 4 8 1 5 2.5 8 T2+ GT2- G- IGT IL VD = 12 V; IT = 100mA; see Figure 4 VD = 12 V; IT = 100mA; see Figure 6 Holding Current IH VD = 12 V; IT = 100mA; see Figure 7 1.3 5 On-state Voltage VT IT = 1.4 A; see Figure 5 1.2 1.5 IT = 10 mA; gate open circuit, see Figure 3; VD = 12 V; IGT = 100 mA 0.7 1.5 Gate Trigger Voltage VGT IT = 10 mA; gate open circuit, see Figure 3; VD = 400 V; IGT = 100 mA;Tj = 125ć Off-state Current ID Rate of Rrise of off-state Voltage Rate of Change of Commutating Current Gate Controlled turn-on time Ƶ Marking Marking BT131 K**** www.kexin.com.cn dVD/dt VD = VDRM(max); Tj = 125 °C VDM =67% VDRM (max); Tj =125 ć; Exponential waveform; RGK=1kȍ; see Figure 8 dVCOM /dt VDM = 400 V; Tj = 125ć; dIcom /dt = 0.5 A/ms tgt 0.2 ITM =1.5A; VD=VDRM (max); IG=100mA; dIG/dt=5A/μs mA V 0.3 0.1 10 Unit V 800 T2- G+ 2 Typ. T2+ G+ T2- G- Latching Current VDRM Test Conditions 20 0.5 mA V/μs 2 2 μs SMD Type TThyristor Triacs BT131 Series Ƶ Typical Characterisitics 1.2 3 51.2 ° C IT(RMS) IT(RMS) (A) (A) 2 0.8 1 0.4 0 10- 2 10- 1 0 - 50 1 10 surge duration (s) f = 50 Hz; Tlead ≤51.2 Fig 1. lead RMS on-state current as a function of surge duration, for sinusoidal currents; maximum values Fig 2. 0 50 100 150 Tlead (° C) = 51.2 ℃ RMS on-state current as a function of lead temperature; maximum values 1.6 3 VGT(Tj) VGT(25° C) IGT(Tj) IGT(25° C) 1.2 2 (1) (2) (3) (4) 1 0.8 0.4 - 50 0 50 100 Tj (° C) 0 - 50 150 (4) (3) (2) (1) 0 50 100 Tj (° C) 150 (1) T2- G+ (2) T2- G(3) T2+ G(4) T2+ G+ Fig 3. Normalized gate trigger voltage as a function of junction temperature Fig 4. Normalized gate trigger current as a function of junction temperature www.kexin.com.cn 3 SMD Type T Thyristor Triacs BT131 Series 3 2 IT (A) IL IL(25° C) 1.6 2 1.2 (1) 0.8 1 (2) (3) 0.4 0 0 0.4 0.8 1.2 1.6 VT (V) 2 0 - 50 0 50 100 Tj (° C) 150 Vo = 0.92 V Rs = 0.4 Ω. (1) Tj = 125 ℃; typical values (2) Tj = 125 ℃; maximum values (3) Tj = 25 ℃; maximum values Fig 5. On-state current characteristics Fig 6. Normalized latching current as a function of junction temperature 103 3 IH IH(25° C) dVD/dt (V/μs) 2 102 1 10 0 - 50 0 50 100 Tj (° C) 150 Fig 7. Normalized holding current as a function of junction temperature 4 www.kexin.com.cn 1 0 50 100 Tj (° C) 150 Fig 8. Rate of rise of off-state voltage as a function of junction temperature; minimum values