CR08AS-8B

Thyristor SMD Type Low Power Use Non-Insulated Type,Glass Passivation Type CR08AS Features IT(AV) :0.8A VDRM :400V/600V IGT :100 A 1 GATE 2 ANODE 3 CATHODE Absolute Maximum Ratings Ta = 25 Parameter Symbol CR08AS-8 CR08AS-12 Unit Repetitive peak reverse voltage VRRM 400 600 V Non-repetitive peak reverse voltage VRSM 500 720 V DC reverse voltage VR(DC) 320 480 V Repetitive peak off-state voltage *1 VDRM 400 600 V DC off-state voltage *1 VD(DC) 320 RMS on-state current IT(RMS) 1.26 A Average on-state current IT(AV) 0.8 A Surge on-state current ITSM 10 A 2 It 0.42 A2s 2 I t for fusing Peak gate power dissipation Average gate power dissipation 480 V PGM 0.5 W PG(AV) 0.1 W Peak gate forward voltage VFGM 6 V Peak gate reverse voltage VRGM 6 V Peak gate forward current A IFGM 0.3 Junction temperature Tj -40 to +125 Storage temperature Tstg -40 to +125 *1 With Gate-to-cathode resistance RGK=1k www.kexin.com.cn 1 Thyristor SMD Type CR08AS Electrical Characteristics Ta = 25 Parameter Symbol Repetitive peak reverse current IRRM Repetitive peak off-state current IDRM On-state voltage Max Unit Tj=125 , VRRM applied,RGK=1k 0.5 mA Tj=125 , VDRM applied, RGK=1k 0.5 mA VTM Ta=25 , ITM=2.5A, instantaneous value 1.5 V Gate trigger voltage VGT Ta=25 , VD=6V, IT=0.1A*1 0.8 V Gate non-trigger voltage VGD Tj=125 , VD=1/2VDRM, RGK=1k Gate trigger current Holding current Thermal resistance Testconditons IGT Tj=25 , VD=6V, IT=0.1A *1 IH Tj=25 , VD=12V, RGK=1k Rth (j-a) Min Typ. 0.2 V 1 100 1.5 Junction to ambient *1 IGT, VGT measurement circuit. *2 If special values of IGT are required, choose at least two items from those listed in the table below. Item A B C IGT ( A) 1 to 30 20 to 50 40 to 100 Marking CRO8AS-12 Marking AD AF MAXIMUM ON-STATE CHARACTERISTICS 102 7 Ta = 25°C 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 0 1 2 3 4 ON-STATE VOLTAGE (V) 2 www.kexin.com.cn 5 RATED SURGE ON-STATE CURRENT 10 SURGE ON-STATE CURRENT (A) CRO8AS-8 ON-STATE CURRENT (A) NO. 9 8 7 6 5 4 3 2 1 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) *2 A 3 mA 65 W Thyristor SMD Type CR08AS GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 102 GATE VOLTAGE (V) 7 5 3 2 VFGM = 6V 101 7 5 3 2 PGM = 0.5W PG(AV) = 0.1W VGT = 0.8V 100 7 5 3 2 IGT = 100µA (Tj = 25°C) 10–1 7 5 3 2 VGD = 0.2V IFGM = 0.3A 10–2 10–2 2 3 5710–12 3 57100 2 3 57101 2 3 57102 2 3 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 100 (%) GATE CHARACTERISTICS 103 7 TYPICAL EXAMPLE 5 3 2 102 7 5 3 2 101 7 5 3 2 100 –40 –20 0 20 40 60 80 100 120 140 160 GATE CURRENT (mA) JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) GATE TRIGGER VOLTAGE (V) 1.0 ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, 0.9 DISTRIBUTION 0.8 TYPICAL EXAMPLE 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 –40 –20 0 20 40 60 80 100 120 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 103 7 25 25 t0.7 5 ALUMINUM BOARD 3 WITH SOLDERING 2 102 7 5 3 2 101 7 5 3 2 100 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (s) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 1.6 θ = 30° 60° 90° 120° 1.4 180° 1.2 1.0 0.8 0.6 0.4 θ 0.2 360° 0 0 RESISTIVE, INDUCTIVE LOADS 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) AMBIENT TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) JUNCTION TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 25 25 t0.7 140 ALUMINUM BOARD θ WITH SOLDERING 360° 120 RESISTIVE, 100 INDUCTIVE LOADS 80 NATURAL CONVECTION 60 θ = 30° 90° 180° 40 60° 120° 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) www.kexin.com.cn 3 Thyristor SMD Type 80 60 90°C/W 40 20 Rth(j – a) = 200°C/W 0 AMBIENT TEMPERATURE (°C) 65°C/W 0 AVERAGE POWER DISSIPATION (W) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 RESISTIVE, INDUCTIVE 140 θ LOADS 360° 120 NATURAL CONVECTION 100 θ = 180° 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 1.6 θ = 30° 60° 90° 120° 1.4 180° 1.2 1.0 0.8 0.6 0.4 θ 0.2 360° 0 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 25 25 t0.7 140 ALUMINUM BOARD θ θ WITH SOLDERING 360° 120 MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 1.6 90° 180° θ = 30° 60° 120° 270° 1.4 DC RESISTIVE LOADS NATURAL CONVECTION 100 80 60 40 60° 120° θ = 30° 90° 180° 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.2 1.0 0.8 0.6 0 RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 100 80 60 40 θ = 30° 60° 120° 270° 20 0 90° 0 180° DC 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) www.kexin.com.cn 0 RESISTIVE, INDUCTIVE LOADS 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 360° 120 360° 0.2 160 BREAKOVER VOLTAGE (T j = t°C) BREAKOVER VOLTAGE (T j = 25°C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 25 25 t0.7 140 ALUMINUM BOARD θ WITH SOLDERING θ 0.4 AVERAGE ON-STATE CURRENT (A) AMBIENT TEMPERATURE (°C) RESISTIVE LOADS 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) 0 4 0 θ AVERAGE ON-STATE CURRENT (A) AVERAGE POWER DISSIPATION (W) AMBIENT TEMPERATURE (°C) CR08AS 120 TYPICAL EXAMPLE 140 100 RGK = 1kΩ 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Thyristor SMD Type TYPICAL EXAMPLE 80 60 40 20 Tj = 125°C 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 120 100 80 60 40 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) HOLDING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE 101 7 DISTRIBUTION TYPICAL EXAMPLE 5 IGT (25°C) = 35µA 3 2 100 7 5 3 2 10–1 7 5 3 2 ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, RGK = 1kΩ 10–2 –60 –40 –20 0 20 40 60 80 100 120 140 4.0 Tj = 25°C 3.5 TURN-ON TIME (µs) 3.0 2.5 2.0 1.5 1.0 0.5 101 GATE TRIGGER CURRENT (µA) TYPICAL EXAMPLE IGT (25°C) IH (1kΩ) # 1 25µA 0.9mA 300 200 #1 100 Tj = 25°C 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE TO CATHODE RESISTANCE (kΩ) HOLDING CURRENT VS. GATE TRIGGER CURRENT 0 100 500 400 JUNCTION TEMPERATURE (°C) HOLDING CURRENT (mA) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE Tj = 125°C RGK = 1kΩ 140 GATE TO CATHODE RESISTANCE (kΩ) 100 (%) HOLDING CURRENT (mA) BREAKOVER VOLTAGE (RGK = rkΩ) BREAKOVER VOLTAGE (RGK = 1kΩ) 100 BREAKOVER VOLTAGE (dv/dt = vV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 120 HOLDING CURRENT (RGK = rkΩ) HOLDING CURRENT (RGK = 1kΩ) 100 (%) BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE 100 (%) CR08AS 102 TURN-ON TIME VS. GATE CURRENT 102 VD = 100V 7 TYPICAL EXAMPLE 5 RL = 47Ω 3 RGK = 1kΩ 2 Ta = 25°C 101 7 5 3 2 100 7 5 3 2 10–1 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE CURRENT (mA) www.kexin.com.cn 5 Thyristor SMD Type 40 TURN-OFF TIME (µs) VD = 50V, VR = 50V 35 IT = 2A, RGK = 1kΩ 30 TYPICAL EXAMPLE ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, 25 DISTRIBUTION 20 15 10 5 0 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj = t°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C) TURN-OFF TIME VS. JUNCTION TEMPERATURE 100 (%) CR08AS REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 104 7 5 3 2 Tj = 25°C TYPICAL EXAMPLE IGT (DC) # 1 10µA #1 # 2 65µA #2 103 7 5 3 2 102 7 5 3 2 101 100 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) 6 www.kexin.com.cn THERMAL IMPEDANCE VS. BOARD DIMENSIONS 320 THERMAL IMPEDANCE (°C/W) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 280 240 200 WITHOUT EPOXY PLATE 160 120 80 t0.7 40 10×10 EPOXY PLATE ALUMINUM WITH COPPER FOIL BOARD 0 0 10 20 30 40 50 60 70 80 BOARD DIMENSIONS (mm) REGULAR SQUARE ONE SIDE