FMMT549

SMD S MD Type Medium Power Transistor FMMT549 SOT-23 Transistors IC Unit: mm Features Low equivalent on-resistance. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating -35 -30 -5 -2 -1 -200 500 -55 to +150 Unit V V V A A mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type FMMT549 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Emitter cut-off current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter voltage * Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO IEBO VCE(sat) VCB=-30V VEB=-4V IC=-1A,IB=-100mA IC=-2A,IB=-200mA Testconditons Transistors IC Min -35 -30 -5 Typ Max Unit V V V -0.1 -0.1 -0.25 -0.5 -0.50 -0.75 -0.9 -0.85 70 80 40 100 100 25 50 300 200 130 80 160 300 -1.25 -1 ìA ìA V V V VBE(sat) IC=-1A,IB=-100mA VBE(ON) IC=-1A,VCE=-2V IC=-50mA, VCE=-2V DC current gain * hFE IC=-1A, VCE=-2V I =-2A, V =-2V IC=-500mA,VCE=-2V Current-gain-bandwidth product Output capacitance Switching times * Pulse test: tp 300 ìs; d 0.02. fT Cobo ton toff IC=-100mA,VCE=-5V,f=100MHz VCB=-10V,f=1MHz VCB=-10V, f=1MHz IC=-500mA,VCC=-10V,IB1=IB2=-50mA MHz pF ns ns Marking Marking 549 2 www.kexin.com.cn