HRW0502A

S MD Type Silicon Schottky Barrier Diode HRW0502A Diodes SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 Low forward voltage drop and suitable for high effifiency rectifying. MPAK package is suittable for high density surface mounting and high speed assembly. +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector A bsolute M axim um R atings T a = 25 P aram eter R epetitive peak reverse voltage A verage rectified current N on-repetitive peak forw ard surge current Junction tem perature S torage tem perature N ote 1. 10m sec sine w ave 1 pulse S ym bol V RRM IO I F S M (N ote 1) Tj T stg V alue 20 500 5 125 -55 to + 125 U nit V mA A Electrical Characteristics Ta = 25 Param eter Forward voltage Reverse current Capacitance Therm al resistance Sym bol VF IR C R th( j-a ) Conditions I F = 500 m A V R = 20 V V R = 0 V, f = 1MHz Polyim ide board 120 340 Min Typ Max 0.40 200 Unit V A pF /W Marking Marking S10 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1