KDS4559

SMD S MD Type Transistors IC 60V Complementary PowerTrench MOSFET KDS4559 Features N-Channel 4.5 A, 60 V RDS(ON) = 55m RDS(ON) = 75m P-Channel -3.5 A, -60 V RDS(ON) = 105 m RDS(ON) = 135 m @ VGS =- 10 V @ VGS =-4.5V @ VGS = 10 V @ VGS =4.5V Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Single Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) Operating and Storage Temperature Thermal Resistance Junction to Ambient (Note 1a) Thermal Resistance Junction to Case (Note 1) TJ, TSTG R R JA JC Symbol VDSS VGS ID PD N-Channel 60 20 4.5 20 2 1.6 P- Channel -60 20 -3.5 -20 Unit V V A A W PD 1.2 1 -55 to 175 78 40 W /W /W www.kexin.com.cn 1 SMD Type KDS4559 Electrical Characteristics Ta = 25 Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Symbol W DSS IAR BVDSS VGS = 0 V, ID = 250 VGS = 0 V, ID = -250 ID = 250 ID = -250 Zero Gate Voltage Drain Current IDSS A A Testconditons VDD = 30 V, ID = 4.5 A N-Ch N-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Transistors IC Min Typ Max 90 4.5 Unit mJ A V 60 -60 58 -49 1 -1 100 100 1 -1 2.2 -1.6 -5.5 3 -3 Breakdown Voltage Temperature Coefficient A, Referenced to 25 A, Referenced to 25 mV/ VDS = 48V, VGS = 0 V VDS = -48 V, VGS = 0 V VGS = VGS = 20V, VDS = 0 V 20 V, VDS = 0 V A A A nA V Gate-Body Leakage Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient IGSS VGS(th) VDS = VGS, ID = 250 VDS = VGS, ID = -250 ID = 250 ID = -250 A, Referenced to 25 A, Referenced to 25 mV/ 4 42 72 55 82 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 -20 14 9 650 759 80 90 35 39 11 7 8 10 19 19 6 12 12.5 15 2.4 2.5 2.6 3.0 20 14 18 20 35 34 15 22 18 21 ns ns nC nC nC pF pF pF ns 130 105 55 94 75 105 190 135 A m VGS = 10 V, ID =4.5A Static Drain-Source On-Resistance RDS(on) VGS = 10 V, ID = 4.5 A,TJ = 125 VGS = 4.5 V, ID =4 A VGS = -10 V, ID =-3.5 A Static Drain-Source On-Resistance RDS(on) VGS = -10 V, ID =-3.5 A,TJ = 125 VGS = -4.5 V, ID =-3.1A On-State Drain Current ID(on) VGS = 10 V, VDS = 5V VGS = -10 V, VDS = -5V VDS = 10V, ID = 4.5A VDS = -5V, ID = -3.5A Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Ciss Coss P-Channel Crss td(on) VDS = -30 V, VGS = 0 V,f = 1.0 MHz N-Channel VDD = 30 V, ID = 1 A, VGS = 10 V, RGEN = 6 (Note 2) N-Channel VDS = 25 V, VGS = 0 V,f = 1.0 MHz Forward Transconductance gFS S Turn-On Rise Time tr N-Ch P-Ch ns Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge td(off) tf Qg Qgs Qgd P-Channel VDD = -30 V, ID = -1 A, VGS = -10 V, RGEN = 6 N-Channel VDS =30V,ID=4.5A,VGS=10V (Note 2) P-Channel VDS=-30V,ID=-3.5A,VGS=-10V (Note 2) (Note 2) N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 2 www.kexin.com.cn SMD Type KDS4559 Electrical Characteristics Ta = 25 Parameter Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Symbol IS VSD VGS = 0 V, IS = 1.3A (Not 2) VGS = 0 V, IS = -1.3A (Not 2) Testconditons N-Ch P-Ch N-Ch P-Ch Transistors IC Min Typ Max 1.3 -1.3 Unit A V 0.8 -0.8 1.2 -1.2 www.kexin.com.cn 3