KDT3055L

Transistors MOSFET SMD Type Unit:mm SOT-223 。 10 6.50±0.2 3.00±0.1 1 D S 0.02 ~ 0.1 G 2 2.30 (typ) 3 0.250 0.84 (max) 0.66 (min) 1.80 (max) 1.6 ± 0.1 D 0.75 (min) 7.0±0.3 3.50±0.2 4 Gauge Plane 1.Gate 2.Drain 4.60 (typ) 3.Source 4.Drain SMD MOSFET Transistors Type ■ Marking Marking 3055L MOSFET Transistors SMD Type KDT3055L Typlacl Characteristics 2 VGS= 10V 6.0V 20 R DS(ON) , NORMALIZED 5.0V 4.5V 15 4.0V 10 3.5V 5 3.0V 0 0 1 2 3 4 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 25 1.8 VGS = 4.0V 1.6 4.5V 5.0V 1.4 6.0V 1.2 8.0V 10V 1 0.8 5 0 5 10 15 I D, DRAIN CURRENT (A) VDS , DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 0.28 R DS(ON) , ON-RESISTANCE (OHM) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = 2A I D = 4.0 A VGS = 10 V 1.4 1.2 1 0.8 0.6 -50 0.24 0.2 0.16 TA = 125°C 0.12 0.08 25°C 0.04 0 -25 0 25 50 75 100 125 150 2 4 Figure 3. On-Resistance Variation with Temperature. 8 10 Figure 4. On-Resistance Variation with Gate-to- Source Voltage. 10 30 8 IS , REVERSE DRAIN CURRENT (A) TJ = -55°C 25°C 125°C VDS = 5V ID , DRAIN CURRENT (A) 6 V GS , GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEMPERATURE (°C) 6 4 2 0 25 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 1.6 20 1 1.5 2 2.5 3 3.5 4 4.5 VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 10 V GS = 0V 1 TA = 125°C 0.1 25°C -55°C 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Current and Temperature. www.kexin.com.cn 3 MOSFET Transistors SMD Type 1000 10 I D = 4A VDS = 10V 500 30V 8 CAPACITANCE (pF) VGS , GATE-SOURCE VOLTAGE (V) KDT3055L 40V 6 4 Ciss 200 Coss 100 50 f = 1 MHz VGS = 0V 20 0 0 2 4 6 8 10 12 10 0.1 14 Qg , GATE CHARGE (nC) 1m 10 10 1 1s 10 s DC 0.3 VGS = 10V SINGLE PULSE R θJA = 110o C/W TA = 25°C 0.2 0.5 0u 60 ms 0m s 30 60 40 20 1 2 5 10 30 0 0.001 60 100 0.01 VDS , DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 300 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 SINGLE PULSE RθJA =110°C/W TA = 25°C s s POWER (W) 3 0.01 0.1 4 80 10 IT LIM N) S(O RD 10 0.03 1 Figure 8. Capacitance Characteristics. 50 0.1 0.3 V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. ID , DRAIN CURRENT (A) Crss 2 Figure 10. Single Pulse Maximum Power Dissipation. 1 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.02 0.01 R θJA (t) = r(t) * R θJA R θJA = 110 °C/W P(pk) 0.01 t1 0.005 Single Pulse 0.002 0.001 0.0001 t2 TJ - TA = P * R JA (t) θ Duty Cycle, D = t1 / t 2 0.001 0.01 0.1 1 10 100 300 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. www.kexin.com.cn 4