KI4511DY

SMD S MD Type N- and P-Channel 20-V (D-S) MOSFET KI4511DY Transistors IC Features TrenchFET Power MOSFET Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 70 Operating Junction and Storage Temperature Range *Surface Mounted on FR4 Board;t 10 sec. TJ, Tstg IDM IS PD 1.7 2 1.3 Symbol VDS VGS ID 9.6 7.7 40 0.9 1.1 0.7 -1.7 2 1.3 -55 to 150 N-Channel 10 sec Steady State 20 16 7.2 5.8 -6.2 -4.9 -40 0.9 1.1 0.7 P-Channel 10 sec Steady State -20 12 -4.6 -3.7 V V A A A A W W Unit Thermal Resistance Ratings TA = 25 Parameter t 10 sec Symbol N-Channel Typ Maximum Junction-to-Ambient* Maximum Junction-to-Foot *Surface Mounted on FR4 Board. RthJA RthJc 50 85 30 Max 62.5 110 40 P-Channel Typ 50 90 30 Max 62.5 110 35 /W Unit Steady State Steady State www.kexin.com.cn 1 SMD Type KI4511DY Electrical Characteristics TJ = 25 Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 16 V VDS = 0 V VGS = 12 V VDS = 20V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -16V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 VDS = -16V, VGS = 0 V, TJ = 55 On State Drain Currenta ID(on) VDS =5 V, VGS = 10 V VDS =-5 V, VGS = -4.5 V VGS = 10 V, ID = 9.6A Drain Source On State Resistance* rDS(on) VGS = -4.5 V, ID = -6.2A VGS = 4.5 V, ID = 8.6A VGS = -2.5 V, ID = -5A Forward Transconductance* Diode Forward Voltage* Total Gate Charge Gate Source Charge Gate Drain Charge Turn On Time Rise Time gfs VSD Qg Qgs Qgd td(on) tr VDS = 15 V, ID = 9.6A VDS = -15 V, ID = -6.2A IS = 1.7A, VGS = 0 V IS = -1.7A, VGS = 0 V N-Channel VDS = 10 V, VGS = 4.5V, ID = 9.6A P-Channel VDS = -10 V, VGS = -4.5 V, ID = -6.2A N Channel VDD = 10 V, RL = 10 ID= 1A, VGEN = 10V, Rg = 6 A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch P-Channel VDD = -10 V, RL = 10 Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width tf trr ID= -1 A, VGEN = -4.5 V, Rg = 6 IF = 1.7 A, di/dt = 100 A/ IF = -1.7 A, di/dt = 100 A/ s s N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 40 -40 Min 0.6 -0.6 Transistors IC Typ Max 1.8 1.4 100 100 1 -1 5 -5 Unit V nA A A 0.0115 0.0145 0.022 0.033 0.0135 0.017 0.035 0.050 33 17 0.8 ?0.8 11.5 17 3.7 4.1 3.3 4.3 12 25 12 30 55 70 15 50 50 40 20 40 20 45 85 105 25 75 100 80 ns 1.2 -1.2 18 20 nC S V Turn Off Delay Time td( off) 300 s, duty cycle 2%. 2 www.kexin.com.cn