NZT753

S MD Type PNP Current Driver Transistor NZT753 SOT-223 6.50 +0.2 -0.2 Transistors Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Features +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 2.9 4.6 3 +0.1 0.70-0.1 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG PD RèJA Rating -100 -120 -5 -4 - 55 to +150 1.2 9.7 103 W mW/ /W Unit V V V A Operating and Storage Junction Temperature Range Total Device Dissipation Derate above 25 Thermal Resistance, Junction to Ambient Electrical Characteristics Ta = 25 Parameter Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current unless otherwise stated Symbol BVCEO BVCBO BVEBO ICBO IEBO Testconditons IC = -10mA, IB = 0 IC = -100ìA, IE = 0 IE = -100ìA, IC = 0 VCB = -100V, IE = 0 TA = 100 VEB = -4V, IC = 0 VCE = -2.0V, IC = -50mA 70 100 55 -0.3 -1.25 -1.0 75 V V V MHz 300 Min -100 -120 -5.0 -0.1 -10 -0.1 Typ Max Unit V V V ìA ìA ìA DC Current Gain hFE VCE = -2.0V, IC = -500mA VCE = -2.0V, IC = -1.0A Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Transition Frequency *Pulse Test: Pulse Width VCE(sat) VBE(sat) VBE(on) fT IC = -1.0A, IC = -50mA IC = -1.0A, IB = -100mA VCE = -2.0V, IC = -1.0A, VCE = -5V, IC = -100mA, f = 100MHz 300ìs, Duty Cycle 2.0% +0.15 1.65-0.15 www.kexin.com.cn 1