KK74HC30AD

TECHNICAL DATA KK74HC30A 8-Input NAND Gate The KK74HC30A is high-speed Si-gate CMOS device and is compatible with low power Schottky TTL (LSTTL) . The device provide the 8-input NAND function. • Outputs Directly Interface to CMOS, NMOS, and TTL • Operating Voltage Range: 2.0 to 6.0 V • Low Input Current: 1.0 µA • High Noise Immunity Characteristic of CMOS Devices ORDERING INFORMATION KK74HC30AN Plastic KK74HC30AD SOIC TA = -55° ÷ 125° C for all packages LOGIC DIAGRAM A B PIN ASSIGNMENT A 1 2 3 4 5 6 7 14 13 12 11 10 9 8 V CC C D Y E F G H B C D E F GND H G -. Y PIN 14 =VCC PIN 7 = GND A L X X X X X X X H B X L X X X X X X H С X X L X X X X X H FUNCTION TABLE Inputs D X X X L X X X X H E X X X X L X X X H F X X X X X L X X H G X X X X X X L X H H X X X X X X X L H Output Y H H H H H H H H L X = don’t care 1 KK74HC30A MAXIMUM RATINGS* Symbol VCC VIN VOUT IIN IOUT ICC PD Tstg TL Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage (Referenced to GND) DC Output Voltage (Referenced to GND) DC Input Current, per Pin DC Output Current, per Pin DC Supply Current, VCC and GND Pins Power Dissipation in Still Air, Plastic DIP** SOIC Package** Storage Temperature Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) Value -0.5 to +7.0 -1.5 to VCC +1.5 -0.5 to VCC +0.5 ±20 ±25 ±50 750 500 -65 to +150 260 Unit V V V mA mA mA mW °C °C *Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. **Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C SOIC Package: : - 7 mW/°C from 65° to 125°C RECOMMENDED OPERATING CONDITIONS Symbol VCC VIN, VOUT TA tr, tf Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) Operating Temperature, All Package Types Input Rise and Fall Time (Figure 1) VCC =2.0 V VCC =4.5 V VCC =6.0 V Min 2.0 0 -55 0 0 0 Max 6.0 VCC +125 1000 500 400 Unit V V °C ns This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND≤(VIN or VOUT)≤VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. 2 KK74HC30A DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Symbol Parameter Test Conditions VCC V Guaranteed Limit 2 5 °C to -55°C 1.5 2.1 3.15 4.2 0.5 0.9 1.35 1.8 1.9 4.4 5.9 2.48 3.98 5.48 0.1 0.1 0.1 0.26 0.26 0.26 -0.1 0.1 2.0 ≤85 °C 1.5 2.1 3.15 4.2 0.5 0.9 1.35 1.8 1.9 4.4 5.9 2.34 3.84 5.34 0.1 0.1 0.1 0.33 0.33 0.33 -1.0 1.0 20 ≤125 °C 1.5 2.1 3.15 4.2 0.5 0.9 1.35 1.8 1.9 4.4 5.9 2.20 3.70 5.20 0.1 0.1 0.1 0.4 0.4 0.4 -1.0 1.0 40 µA µA µA V V Unit VIH Minimum High-Level Input Voltage VOUT≤0.1V or VOUT ≥VCC-0.1V ⎢IOUT⎢≤ 20 µA VOUT≤0.1V or VOUT ≥VCC-0.1V ⎢IOUT⎢≤ 20 µA VIN=VIH or VIL ⎢IOUT⎢ ≤ - 20 µA VIN= VIH or VIL ⎢IOUT⎢ ≤ - 2.4 mA VIN= VIH or VIL ⎢IOUT⎢ ≤ - 4.0 mA VIN= VIH or VIL ⎢IOUT⎢ ≤ - 5.2 mA 2.0 3.0 4.5 6.0 2.0 3.0 4.5 6.0 2.0 4.5 6.0 3.0 4.5 6.0 2.0 4.5 6.0 3.0 4.5 6.0 6.0 6.0 6.0 VIL Maximum Low -Level Input Voltage V VOH Minimum High-Level Output Voltage V VOL Maximum Low-Level Output Voltage VIN= VIH or VIL ⎢IOUT⎢ ≤ 20 µA VIN= VIH or VIL ⎢IOUT⎢ ≤ 2.4 mA VIN= VIH or VIL ⎢IOUT⎢ ≤ 4.0 mA VIN= VIH or VIL ⎢IOUT⎢ ≤ 5.2 mA VIN= 0 V VIN= VCC VIN=VCC or 0 V IOUT=0 µA IIL IIH ICC Maximum Low-Level Input Leakage Current Maximum High-Level Input Leakage Current Maximum Quiescent Supply Current (per Package) 3 KK74HC30A AC ELECTRICAL CHARACTERISTICS (CL=50pF,Input tr=tf=6.0 ns) VCC Symbol Parameter V Guaranteed Limit 2 5 °C to -55°C 175 35 30 75 15 13 10 ≤85°C ≤125°C Unit tPHL, tPLH Maximum Propagation Delay (Figure 1) 2.0 4.5 6.0 2.0 4.5 6.0 5.0 220 44 37 95 19 16 10 265 53 45 110 22 19 10 ns tTHL, tTLH Maximum Output Transition Time (Figure 1) Maximum Input Capacitance Power Dissipation Capacitance (Per Gate) ns CIN pF TA=25°C,VCC=5.0 V 27 pF CPD Used to determine the no-load dynamic power consumption: PD=CPDVCC2f+ICCVCC tf 0.9 tr V1 0.9 Input V2 0.1 0.1 V2 GND tPHL VCC tPLH 0.9 V2 0.1 0.9 V2 0.1 Output 0V tTLH tTHL V1 = VCC V2 = 0.5 VCC Figure 1. Switching Waveforms VCC VI PULSE GENERATOR RT D EVI CE UNDER TEST VO Termination resistance RT – should be equal to ZOUT of pulse generators CL 50 pF Figure 2. Test Circuit 4 KK74HC30A N S UFFIX PLAS TIC DIP (MS - 0 0 1 AA) A 14 8 B 1 7 Dimens ion, mm Symbol A B C MIN 18.67 6.1 MAX 19.69 7.11 5.33 0.36 1.14 2.54 7.62 0° 2.92 7.62 0.2 0.38 10° 3.81 8.26 0.36 0.56 1.78 F L D F C -T- SEATING N G D 0.25 (0.010) M T K PLAN E G H H J M J K L M N NOTES : 1. Dimen s io n s “A ”, “B” d o n o t in clu d e mo ld flas h o r p ro tru s io n s . Maximu m mo ld flas h o r p ro tru s io n s 0.25 mm (0.010) p er s id e. D S UFFIX S OIC (MS - 0 1 2 AB) Dimens ion, mm 8 A 14 Symbol A MIN 8.55 3.8 1.35 0.33 0.4 1.27 5.27 0° 0.1 0.19 5.8 0.25 MAX 8.75 4 1.75 0.51 1.27 H B P B C 1 G 7 C R x 45 D F G -TD 0.25 (0.010) M T C M K SEATING PLAN E H J F M J K M P R 8° 0.25 0.25 6.2 0.5 NOTES : 1. Dimen s io ns A an d B d o n o t in clud e mo ld flas h o r p rotru s ion . 2. M aximu m mo ld flas h o r p ro tru s io n 0.15 mm (0.006) p er s id e fo r A ; fo r B ‑ 0.25 mm (0.010) p er s id e. 5