KK74VHCT373

TECHNICAL DATA Octal d-type latch (3-state) KK74VHCT373 is designed for using in up-to-date high performance computers, high-level electronic equipment for mass application. KK74VHCT373 is identical in pinout to the ICs KK74HC373A, KK74HCT373A, KK74AC373A, KK74ACT373A. Input voltage levels are compatible with standard TTLlevels. Output voltage levels are compatible with input levels of C-MOS, N-MOS and TTL ICs. KK74VHCT373 ORDERING INFORMATION KK74VHCT373N Plastic KK74VHCT373DW SOIC TA = -40° to 85° C for all packages Features: • Supply voltage range 4.5 to 5.5 V. • Output current 8 mA. • Low consumption current: 0.2 mkA (typical value) at Та = 25 °С. • Latchup current not less than 300 mA at Та = 85 °С. • Tolerable value of static potential not less than 2000 V as per human body model (HBM) and not less than 200 V as per machine model (ММ). • Ambient operation temperature minus 40 to plus 85 °С. • Balanced signal propagation delay. • Ensures voltage exceeding mode on input . 1 KK74VHCT373 KK74VHCT373 truth table Input Output D H L X X Q H L Qo Z OE L L L H Note – LE H H L X H - high voltage level; L - low voltage level; X - any voltage level (low or high); Qo - storage of the previous state; Z - output in the third state Pins description in KK74VHCT373 Pinout OE Q0 D0 D1 Q1 Q2 D2 D3 Q3 01 02 03 04 05 06 07 08 09 20 19 18 17 16 15 14 13 12 11 Pin No. 01 Symbol Description Input OUTPUT ENABLE Data output Data input Data input Data output Data output Data input Data input Data output Common output Recording enable input Data output Data input Data input Data output Data output Data input Data input Data output Supply output from voltage source OE Q0 D0 D1 Q1 Q2 D2 D3 Q3 GND LE Q4 D4 D5 Q5 Q6 D6 D7 Q7 Vcc VCC Q7 D7 D6 Q6 Q5 D5 D4 Q4 LE 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 GND 10 2 KK74VHCT373 Absolute maximum conditions* Parameter, unit Supply voltage, V Input voltage, V Output voltage, V Output voltage, V Input diode current, mA Current of common output and supply output, mA Output current, mA Output diode current, mA Dissipated power, mW Symbol VCC Vin Vout Vout1 Iik Icc Iout Iok Pd min -0.5 -0.5 -0.5 -0.5 Value max 7.0 7.0 VCC + 0.5B 7.0 -20 ±75 ±25 ±20 180 *Under absolute maximum conditions operation of microcircuit is not guaranteed. Operation is guaranteed under maximum conditions Maximum conditions Parameter, unit Symbol Value max 5.5 VCC VCC 5.5* ±8.0 20 – outputs min Supply voltage, V VCC 4.5 Input voltage,V Vin 0 Output voltage, V Vout 0 Output voltage, V Vout1 0 Output current, mA Iout Input rise and fall time, ns/V tLH, tHL 0 * - For ICs without third state on outputs – Vcc = 0V, for ICs with third state on outputs should be in third state 3 KK74VHCT373 DC electrical characteristics Value Symbo l VIH VIL VOH Parameter High input voltage Test conditions VCC, V 25 ° C min 2.0 – 4.42 5.42 3.94 – – – max 0.8 – – – 0.09 0.09 0.36 ±0.25 ±0.1 ±0.1 4.0 1.35 –40 to 85 °C min max 2.0 – 4.4 5.4 3.80 – – – 0.8 – – – 0.1 0.1 0.44 ±2.5 ±1.0 ±1.0 40.0 1.5 mA Unit VOL IOZ II IIH1 ICC ICCT 4.5 – VO ≤ 0.1 V or 5.5 VO ≥ VCC –0.1 Low input voltage 4.5 – VO ≤ 0.1 V or 5.5 VO ≥ VCC –0.1 High output voltage VI = VIH or VIL 4.5 IO = -50 mkA 5.5 VI = VIH or VIL; 4.5 IO = -8 mA Low output voltage VI = VIH or VIL 4.5 IO = 50 mkA 5.5 VI = VIH or VIL 4.5 IO = 8 mA 5.5 Output current in VI = 2.0V "off" state VO = VCC or 0V Input current VI = 0 V or VCC 5.5 High level input VI = 5.5V 0 current Consumption current VI =VCC or 0V 5.5 TTL-input VI consumption current = 3.4 V 5.5 V - - uA 4 KK74VHCT373 AC electrical characteristics (tLH = tHL = 3.0 ns, RL = 1 kOhm) Value Symbol Parameter Test conditions VCC, V CL, pF 25 ° C min – – – – – max 12.3 13.3 8.5 9.5 11.2 –40 to 85 °C min max – 13.5 – 14.5 – – – 9.5 10.5 12.0 Unit ns tPHL, tPLH Propagation delay time Fig 1 when switching «on», «off» from input LE to output Q tPHL, tPLH From input D to output Q Fig 1 tPHZ , tPLZ Propagation delay time Fig 2 under transition from high, low level into «off» state tPZH , tPZL Propagation delay time Fig 2 under transition from «off» state into high, low level tSU Time of setting signal D Fig 3 relativey to LE tH Retention time, D signal Fig 3 to LE tW Pulse duration of LE Fig 3 signal tOSLH, Propagation delays tOSHL difference between outputs 5.0 ± 0.5 15 50 5.0 ± 0.5 15 50 5.0 ± 0.5 50 ns ns 5.0 ± 0.5 15 50 5.0 ± 0.5 15 50 5.0 ± 0.5 15 50 5.0 ± 0.5 15 50 5.5 ± 0.5 50 – – 1.5 1.5 3.5 3.5 6.5 6.5 – 10.9 11.9 – – – – – – 1.0 – – 1.5 1.5 3.5 3.5 8.5 8.5 – 12.5 13.5 – – – – – – 1.0 ns ns – Capacitance characteristics Symbol CI CO CРD Parameter Input capacity Output capacity Dynamic capacity Test conditions VI = 0 V orVCC VCC, V 5.0 5.0 5.0 Value 25 ° C min max 10 12 50 Unit pF pF pF 5 KK74VHCT373 Noise characteristics (CL = 50 pF) Parameter Symbol VOLP VOLV VIHD VILD VCC, V Positive noise of low output voltage 5.0 Negative noise of low output 5.0 voltage Input dynamic high voltage Input dynamic low voltage 5.0 5.0 min -1.6 2.0 0.8 Value max 1.6 Unit V - - Time diagram of input and output pulses tLH 0.9 Input 0.1 tPLH 0.5 0.5 0.1 tPHL GND VCC tHL 0.9 3. 0 V Output 1.5 V 1.5 V 0V Fig. 1 tHL Input 0.9 0. 5 0.1 tPZH Output tPHZ 1.5 V tPLZ Output tPZL 1.5 V 0.1 VOL 0V VCC 0.1 0.9 0. 5 0V VOH tLH 0.9 3.0 V Fig.2 6 KK74VHCT373 Time diagram of input pulses 3.0 V Input D 0. 5 tSU tH 0.5 GND 3.0 V 0.5 tW 0.5 GND Input LE Fig. 3 7 KK74VHCT373 N S UFFIX PLAS TIC DIP (MS - 0 0 1 AD) A Dimens ion, mm 20 11 B 1 10 Symbol A B C MIN 24.89 6.1 MAX 26.92 7.11 5.33 F L D F 0.36 1.14 2.54 7.62 0° 2.92 7.62 0.2 0.38 0.56 1.78 C -T- SEATING N G D 0.25 (0.010) M T K PLAN E G H H J M J K L M N 10° 3.81 8.26 0.36 NOTES : 1. Dimen s io n s “A ”, “B” d o n o t in clu d e mo ld flas h o r p ro tru s io n s . Maximu m mo ld flas h o r p ro tru s io n s 0.25 mm (0.010) p er s id e. D S UFFIX S OIC (MS - 0 1 3 AC) A 20 11 Dimens ion, mm Symbol MIN 12.6 7.4 2.35 0.33 0.4 1.27 9.53 0° 0.1 0.23 10 0.25 8° 0.3 0.32 10.65 0.75 MAX 13 7.6 2.65 0.51 1.27 H B P A B 1 G 10 C R x 45 C D F -TD 0.25 (0.010) M T C M K SE AT IN G PL AN E J F M G H J K M P R NOTES : 1. Dimen s io ns A an d B d o n o t in clud e mo ld flas h o r p ro tru s ion . 2. M aximu m mo ld flas h o r p ro tru s io n 0.15 mm (0.006) p er s id e fo r A ; fo r B ‑ 0.25 mm (0.010) p er s id e. 8