LS310

LS310 LS311 LS312 LS313 Linear Integrated Systems MONOLITHIC DUAL NPN TRANSISTORS FEATURES VERY HIGH GAIN TIGHT VBE MATCHING HIGH fT hFE ≥ 200 @ 10µA-1mA |VBE1-VBE2| = 0.2mV TYP. 250MHz TYP. @ 1mA C1 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Collector Current 10mA IC Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Device Dissipation @ Free Air Linear Derating Factor -65° to +200°C +150°C B1 ONE SIDE 250mW 2.3mW/°C BOTH SIDES 500mW 4.3mW/°C E1 E2 B2 BOTTOM VIEW C2 E1 3 5 E2 B12 6 B2 1 C1 7 C2 26 X 29 MILS ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS310 LS311 LS312 LS313 UNITS CONDITIONS Collector to Base Voltage 25 45 60 45 MIN. V IC = 10µA IE = 0 BVCBO BVCEO BVEBO BVCCO hFE hFE hFE ICBO IEBO COBO CC1C2 IC1C2 fT NF Collector to Emitter Voltage Emitter-Base Breakdown Voltage Collector to Collector Voltage DC Current Gain DC Current Gain DC Current Gain Collector Cutoff Current Emitter Cutoff Current Output Capacitance Collector to Collector Capacitance Collector to Collector Leakage Current Current Gain Bandwidth Product Narrow Band Noise Figure 25 6.2 30 150 150 150 0.25 0.2 0.2 2 2 0.5 200 3 45 6.2 100 150 150 150 0.25 0.2 0.2 2 2 0.5 200 3 60 6.2 100 200 200 200 0.25 0.2 0.2 2 2 0.5 200 3 45 6.2 100 MIN. MIN. MIN. V V V IC = 10µA IE = 10µA IC = 10µA IB = 0 IC = 0 IE = 0 VCE = 5V NOTE 2 400 MIN. 1000 MAX. 400 MIN. 400 0.25 0.2 0.2 2 2 0.5 200 3 MIN. MAX. MAX. MAX. MAX. MAX. MAX. MIN. MAX. V nA nA pF pF nA MHz dB IC = 10µA IC = 100µA VCE = 5V IC = 1mA IC = 1mA IE = 0 IE = 0 IE = 0 VCC = 0 VCC = NOTE 4 IC = 100µA VCE = 5V IC = 1mA VCE = 5V VCE = 5V IB = 0.1mA VCB = NOTE 3 VCB = 3V VCB = 5V VCE(SAT) Collector Saturation Voltage BW = 200Hz, RG = 10 KΩ f=1KHz Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS310 LS311 LS312 LS313 MIN. UNITS CONDITIONS |VBE1-VBE2| Base Emitter Voltage Differential 1 3 ∆|(VBE1-VBE2)|/°C Base Emitter Voltage Differential Change with Temperature |IB1- IB2| |∆(IB1-IB2)|/°C hFE1/hFE2 Base Current Differential 10 Base Current Differential Change With Temperature Current Gain Differential 10 5 5 5 TYP. % 0.5 5 0.3 2 15 0.4 1 1 5 0.2 0.5 0.5 2 0.4 1 1 5 1.25 5 0.5 TYP. MAX TYP. MAX. TYP. nA MAX. nA mV mV. µV/°C IC = 10 µA IC = 10µA VCE = 5V VCE = 5V VCE = 5V VCE = 5V TA = -55°C to +125°C IC = 10 µA VCE = 5V MAX. nA/°C IC = 10µA IC = 10µA TA = -55°C to +125°C TO-71 Six Lead 0.195 DIA. 0.175 0.030 MAX. 0.230 DIA. 0.209 0.150 0.115 TO-78 0.305 0.335 0.335 0.370 MAX. 0.040 0.165 0.185 MIN. 0.500 SEATING PLANE 0.200 0.100 2 34 1 5 8 76 P-DIP 0.320 (8.13) 0.290 (7.37) 0.405 (10.29) MAX. C1 B1 E1 N/C 1 2 3 4 8 7 6 5 C2 B2 E2 N/C 0.016 0.019 DIM. A 0.016 0.021 DIM. B 0.029 0.045 6 LEADS 0.019 DIA. 0.016 0.100 0.500 MIN. 0.050 234 1 8 5 6 7 SOIC 0.150 (3.81) 0.158 (4.01) 0.100 45° 0.046 0.036 45° 0.048 0.028 0.028 0.034 0.188 (4.78) 0.197 (5.00) C1 B1 E1 N/C 1 2 3 4 8 7 6 5 C2 B2 E2 N/C 0.228 (5.79) 0.244 (6.20) NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. 2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA. 3. For LS310: VCB= 20V; for LS311, LS312 & LS313: VCB = 30V. 4. For LS310, LS311 & LS313: VCC= ±45V; for LS312: VCC= ±100V. Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261