LS844

LS843 LS844 LS845 Linear Integrated Systems FEATURES ULTRA LOW NOISE LOW LEAKAGE LOW DRIFT ULTRA LOW OFFSET VOLTAGE ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET en= 3nV/√Hz TYP. IG = 15pA TYPs. |∆VGS1-2 /∆T|= 5µV/°C max. IVGS1-2I= 1mV max. ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature -65° to +150°C +150°C D1 S1 G1 G2 S2 D2 31 X 32 MILS G1 3 5 S2 D1 2 6 D2 Maximum Voltage and Current for Each Transistor NOTE 1 Gate Voltage to Drain or Source 60V -VGSS -VDSO -IG(f) Drain to Source Voltage Gate Forward Current 60V 50mA 1 S1 7 G2 Maximum Power Dissipation Device Dissipation @ Free Air - Total BOTTOM VIEW 400mW @ +125°C ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS843 LS844 LS845 UNITS 5 10 25 µV/°C |∆VGS1-2 /∆T| max. Drift vs. Temperature |VGS1-2| max. SYMBOL BVGSS BVGGO Yfss Yfs |Yfs1-2/Yfs| IDSS |IDSS1-2/IDSS| VGS(off) or VP VGS -IG -IG -IG -IGSS Offset Voltage CHARACTERISTICS Breakdown Voltage Gate-to-Gate Breakdown TRANSCONDUCTANCE Full Conduction Typical Conduction Mismatch DRAIN CURRENT Full Conduction Mismatch at Full Conduction GATE VOLTAGE Pinchoff Voltage Operating Range GATE CURRENT Operating High Temperature Reduced VDG At Full Conduction ----15 -5 -50 50 30 100 pA nA pA pA 1 0.5 --3.5 3.5 V V 1.5 -5 1 15 5 mA % 1500 1000 --1500 0.6 --3 µmho µmho % 1 MIN. 60 60 5 TYP. --15 MAX. --mV UNITS V V CONDITIONS VDG= 10V VDG= 10V TA= -55°C to +125°C ID= 500µA ID= 500µA CONDITIONS VDS= 0 ID= 1nA IG= 1nA VDG= 15V VDG= 15V ID= 0 VGS= 0 IS= 0 f= 1kHz ID= 500µA VDG= 15V VGS= 0 VDS= 15V VDS= 15V VDG= 15V VDG= 15V VDG= 3V VDG= 15V ID= 1nA ID= 500µA ID= 500µA ID= 500µA ID= 500µA VDS= 0 TA= +125°C Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261 SYMBOL YOSS YOS |YOS1-2| CMR CMR CHARACTERISTICS OUTPUT CONDUCTANCE Full Conduction Operating Differential COMMON MODE REJECTION -20 log |∆VGS1-2/∆VDS| NOISE MIN. ---90 -- TYP. -0.2 0.02 110 85 ---- MAX. UNITS 20 2 0.2 --0.5 7 11 µmho µmho µmho dB dB dB nV/√Hz nV/√Hz CONDITIONS VDG= 15V VDG= 15V VGS= 0 ID= 500µA ∆VDS= 10 to 20V ∆VDS= 5 to 10V VDS= 15V f= 100Hz VDS= 15V NBW= 1Hz VDS= 15V NBW= 1Hz VDS= 15V VDG= 15V ID= 500µA ID= 500µA VGS= 0 RG= 10MΩ NBW= 6Hz ID= 500µA f= 1kHz ID= 500µA f= 10Hz ID= 500µA ID= 500µA NF en en Figure Voltage Voltage CAPACITANCE Input Reverse Transfer Drain-to-Drain ---- CISS CRSS CDD ---- --0.5 8 3 -- pF pF pF TO-71 Six Lead 0.195 DIA. 0.175 0.030 MAX. 0.230 DIA. 0.209 0.150 0.115 TO-78 0.305 0.335 0.335 0.370 MAX. 0.040 0.165 0.185 MIN. 0.500 SEATING PLANE 0.200 0.100 P-DIP 0.320 (8.13) 0.290 (7.37) 0.405 (10.29) MAX. S1 D1 SS G1 1 2 3 4 8 7 6 5 G2 SS D2 S2 0.016 0.019 DIM. A 0.016 0.021 DIM. B 0.029 0.045 2 34 1 5 8 76 6 LEADS 0.019 DIA. 0.016 0.100 0.500 MIN. 0.050 234 1 8 5 6 7 SOIC 0.150 (3.81) 0.158 (4.01) 0.100 45° 0.046 0.036 45° 0.048 0.028 0.028 0.034 0.188 (4.78) 0.197 (5.00) S1 D1 SS G1 1 2 3 4 8 7 6 5 G2 SS D2 S2 0.228 (5.79) 0.244 (6.20) NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261