LT5571EUF#PBF

LT5571 620MHz – 1100MHz High Linearity Direct Quadrature Modulator DESCRIPTION FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Direct Conversion from Baseband to RF High Output: –4.2dB Conversion Gain High OIP3: 21.7dBm at 900MHz Low Output Noise Floor at 20MHz Offset: No RF: –159dBm/Hz POUT = 4dBm: –153.3dBm/Hz Low Carrier Leakage: –42dBm at 900MHz High Image Rejection: –53dBc at 900MHz 3-Ch CDMA2000 ACPR: –70.4dBc at 900MHz Integrated LO Buffer and LO Quadrature Phase Generator 50Ω AC-Coupled Single-Ended LO and RF Ports High Impedance DC Interface to Baseband Inputs with 0.5V Common Mode Voltage 16-Lead QFN 4mm × 4mm Package APPLICATIONS ■ ■ ■ ■ ■ RFID Interrogators GSM, CDMA, CDMA2000 Transmitters Point-to-Point Wireless Infrastructure Tx Image Reject Up-Converters for Cellular Bands Low-Noise Variable Phase-Shifter for 620MHz to 1100MHz Local Oscillator Signals The LT®5571 is a direct I/Q modulator designed for high performance wireless applications, including wireless infrastructure. It allows direct modulation of an RF signal using differential baseband I and Q signals. It supports RFID, GSM, EDGE, CDMA, CDMA2000, and other systems. It may also be configured as an image reject upconverting mixer by applying 90° phase-shifted signals to the I and Q inputs. The high impedance I/Q baseband inputs consist of voltage-to-current converters that in turn drive double-balanced mixers. The outputs of these mixers are summed and applied to an on-chip RF transformer, which converts the differential mixer signals to a 50Ω singleended output. The four balanced I and Q baseband input ports are intended for DC-coupling from a source with a common-mode voltage at about 0.5V. The LO path consists of an LO buffer with single-ended input, and precision quadrature generators that produce the LO drive for the mixers. The supply voltage range is 4.5V to 5.25V. , LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. TYPICAL APPLICATION CDMA2000 ACPR, AltCPR and Noise vs RF Output Power at 900MHz for 1 and 3 Carriers Direct Conversion Transmitter Application –40 I-DAC 100nF ×2 RF = 620MHz TO 1100MHz LT5571 V-I I-CH PA 0° EN 90° Q-CH Q-DAC BALUN –50 ACPR, AltCPR (dBc) VCC –60 3-CH AltCPR 1-CH ACPR –70 –130 –140 1-CH NOISE –80 –150 1-CH AltCPR 3-CH NOISE 5571 TA01a VCO/SYNTHESIZER –120 3-CH ACPR V-I BASEBAND GENERATOR –110 DOWNLINK TEST MODEL 64 DPCH –90 –30 NOISE FLOOR AT 30MHz OFFSET (dBm/Hz) 5V –160 –10 –5 0 –25 –20 –15 RF OUTPUT POWER PER CARRIER (dBm) 5571 TA01b 5571f 1 LT5571 ABSOLUTE MAXIMUM RATINGS PACKAGE/ORDER INFORMATION (Note 1) VCC GND BBMI BBPI TOP VIEW Supply Voltage .........................................................5.5V Common-Mode Level of BBPI, BBMI and BBPQ, BBMQ .......................................................0.6V Operating Ambient Temperature (Note 2) ............................................... –40°C to 85°C Storage Temperature Range................... –65°C to 125°C Voltage on any Pin Not to Exceed...................... –500mV to VCC + 500mV 16 15 14 13 EN 1 12 GND GND 2 11 RF 17 LO 3 10 GND GND 4 6 7 8 BBMQ GND BBPQ VCC 9 5 GND UF PACKAGE 16-LEAD (4mm × 4mm) PLASTIC QFN TJMAX = 125°C, θJA = 37°C/W EXPOSED PAD (PIN 17) IS GND, MUST BE SOLDERED TO PCB Note: The baseband input pins should not be left floating. ORDER PART NUMBER UF PART MARKING LT5571EUF 5571 Order Options Tape and Reel: Add #TR Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF Lead Free Part Marking: http://www.linear.com/leadfree/ Consult LTC Marketing for parts specified with wider operating temperature ranges. ELECTRICAL CHARACTERISTICS VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz, fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5VDC, Baseband Input Frequency = 2MHz, I & Q 90° shifted (upper sideband selection). PRF(OUT) = –10dBm, unless otherwise noted. (Note 3) SYMBOL PARAMETER CONDITIONS fRF RF Frequency Range RF Frequency Range –3dB Bandwidth –1dB Bandwidth S22, ON RF Output Return Loss EN = High (Note 6) S22, OFF RF Output Return Loss EN = Low (Note 6) NFloor RF Output Noise Floor No Input Signal (Note 8) POUT = 4dBm (Note 9) POUT = 4dBm (Note 10) GV Conversion Voltage Gain 20 • Log (VOUT, 50Ω/VIN, DIFF, I or Q) MIN TYP MAX UNITS RF Output (RF) 0.62 to 1.1 0.65 to 1.04 GHz GHz 12.7 dB 11.6 –159 –153.3 –152.9 dB dBm/Hz dBm/Hz dBm/Hz –4.2 dB POUT Absolute Output Power 1VP-P DIFF CW Signal, I and Q –0.2 dBm G3LO vs LO 3 • LO Conversion Gain Difference (Note 17) –25.5 dB OP1dB Output 1dB Compression (Note 7) 8.1 dBm OIP2 Output 2nd Order Intercept (Notes 13, 14) 63.8 dBm OIP3 Output 3rd Order Intercept (Notes 13, 15) 21.7 dBm IR Image Rejection (Note 16) –53 dBc LOFT Carrier Leakage (LO Feedthrough) EN = High, PLO = 0dBm (Note 16) EN = Low, PLO = 0dBm (Note 16) –42 –61 dBm dBm 5571f 2 LT5571 ELECTRICAL CHARACTERISTICS VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz, fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5VDC, Baseband Input Frequency = 2MHz, I & Q 90° shifted (upper sideband selection). PRF(OUT) = –10dBm, unless otherwise noted. (Note 3) LO Input (LO) fLO LO Frequency Range 0.5 to 1.2 PLO LO Input Power S11, ON LO Input Return Loss EN = High (Note 6) –10.9 dB S11, OFF LO Input Return Loss EN = Low (Note 6) –2.6 dB NFLO LO Input Referred Noise Figure at 900MHz (Note 5) 14.3 dB GLO LO to RF Small Signal Gain at 900MHz (Note 5) 18.5 dB IIP3LO LO Input 3rd Order Intercept at 900MHz (Note 5) –4.8 dBm MHz –10 0 GHz 5 dBm Baseband Inputs (BBPI, BBMI, BBPQ, BBMQ) BWBB Baseband Bandwidth –3dB Bandwidth 400 VCMBB DC Common-Mode Voltage Externally Applied (Note 4) 0.5 0.6 V RIN Differential Input Resistance 90 kΩ IDC, IN Baseband Static Input Current (Note 4) –24 µA PLO-BB Carrier Feedthrough on BB No Baseband Signal (Note 4) –42 dBm IP1dB Input 1dB Compression Point Differential Peak-to-Peak (Note 7) 2.9 VP-P,DIFF ΔGI/Q I/Q Absolute Gain Imbalance 0.013 dB ΔϕI/Q I/Q Absolute Phase Imbalance 0.24 Deg Power Supply (VCC) VCC Supply Voltage 4.5 5 5.25 V ICC(ON) Supply Current EN = High ICC(OFF) Supply Current, Shutdown Mode EN = 0V 97 120 mA 100 µA tON Turn-On Time EN = Low to High (Note 11) 0.4 µs tOFF Turn-Off Time EN = High to Low (Note 12) 1.4 µs 230 V µA Enable (EN), Low = Off, High = On Enable Shutdown Input High Voltage Input High Current EN = High EN = 5V Input Low Voltage EN = Low Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: Specifications over the –40°C to 85°C temperature range are assured by design, characterization and correlation with statistical process controls. Note 3: Tests are performed as shown in the configuration of Figure 7. Note 4: At each of the four baseband inputs BBPI, BBMI, BBPQ and BBMQ. Note 5: V(BBPI) – V(BBMI) = 1VDC, V(BBPQ) – V(BBMQ) = 1VDC. Note 6: Maximum value within –1dB bandwidth. Note 7: An external coupling capacitor is used in the RF output line. Note 8: At 20MHz offset from the LO signal frequency. 1 0.5 V Note 9: At 20MHz offset from the CW signal frequency. Note 10: At 5MHz offset from the CW signal frequency. Note 11: RF power is within 10% of final value. Note 12: RF power is at least 30dB lower than in the ON state. Note 13: Baseband is driven by 2MHz and 2.1MHz tones. Drive level is set in such a way that the two resulting RF tones are –10dBm each. Note 14: IM2 measured at LO frequency + 4.1MHz Note 15: IM3 measured at LO frequency + 1.9MHz and LO frequency + 2.2MHz. Note 16: Amplitude average of the characterization data set without image or LO feed-through nulling (unadjusted). Note 17: The difference in conversion gain between the spurious signal at f = 3 • LO – BB versus the conversion gain at the desired signal at f = LO + BB for BB = 2MHz and LO = 900MHz. 5571f 3 LT5571 TYPICAL PERFORMANCE CHARACTERISTICS VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz, fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5VDC, Baseband Input Frequency fBB = 2MHz, I & Q 90° shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper sideband selection). PRF(OUT) = –10dBm (–10dBm/tone for 2tone measurements), unless otherwise noted. (Note 3) RF Output Power vs LO Frequency at 1VP-P Differential Baseband Drive Supply Current vs Supply Voltage 85°C 100 25°C 90 –40°C –2 0 –4 –2 –6 –4 –6 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C –8 –10 4.75 5.00 SUPPLY VOLTAGE (V) –12 550 5.25 75 fBB, 1 = 2MHz fBB, 2 = 2.1MHz 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C 16 14 12 550 60 55 45 550 –48 550 –2 550 650 750 850 950 1050 1150 1250 LO FREQUENCY (MHz) 2 • LO LEAKAGE (dBm) 650 750 850 950 1050 1150 1250 LO FREQUENCY (MHz) 3 • LO Leakage to RF Output vs 3 • LO Frequency 5571 G07 –45 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C –45 –50 –55 –60 1.1 650 750 850 950 1050 1150 1250 LO FREQUENCY (MHz) 5571 G06 –40 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C 0 2 • LO Leakage to RF Output vs 2 • LO Frequency –40 –44 4 5571 G05 LO Feedthrough to RF Output vs LO Frequency –42 6 2 5571 G04 –46 8 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C 50 650 750 850 950 1050 1150 1250 LO FREQUENCY (MHz) 10 OP1dB (dBm) 65 OIP2 (dBm) OIP3 (dBm) 22 LO FEEDTHROUGH (dBm) Output 1dB Compression vs LO Frequency fIM2 = fBB, 1 + fBB, 2 + fLO fBB, 1 = 2MHz fBB, 2 = 2.1MHz 70 18 650 750 850 950 1050 1150 1250 LO FREQUENCY (MHz) 5558 G03 Output IP2 vs LO Frequency 20 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C –12 5571 G02 Output IP3 vs LO Frequency 24 –10 –16 550 650 750 850 950 1050 1150 1250 LO FREQUENCY (MHz) 5571 G01 26 –8 –14 –50 3 • LO LEAKAGE (dBm) 80 4.50 Voltage Gain vs LO Frequency 2 VOLTAGE GAIN (dB) RF OUTPUT POWER (dBm) SUPPLY CURRENT (mA) 110 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C –55 –60 –65 1.3 1.5 1.7 1.9 2.1 2.3 2 • LO FREQUENCY (GHz) 2.5 5571 G08 –70 1.65 1.95 2.25 2.55 2.85 3.15 3.5 3.75 3 • LO FREQUENCY (GHz) 5571 G09 5571f 4 LT5571 TYPICAL PERFORMANCE CHARACTERISTICS VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz, fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5VDC, Baseband Input Frequency fBB = 2MHz, I & Q 90° shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper sideband selection). PRF(OUT) = –10dBm (–10dBm/tone for 2tone measurements), unless otherwise noted. (Note 3) Noise Floor vs RF Frequency –157 –158 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C –35 –159 –160 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C –162 550 –40 –45 RF PORT, EN = HIGH, NO LO –40 550 650 750 850 950 1050 1150 1250 LO FREQUENCY (MHz) 0 550 650 750 850 950 1050 1150 1250 FREQUENCY (MHz) Voltage Gain vs LO Power –2 3 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C 2 1 –6 –8 –10 –12 –14 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C –16 –18 0 550 650 750 850 950 1050 1150 1250 LO FREQUENCY (MHz) –4 VOLTAGE GAIN (dB) ABSOLUTE I/Q PHASE IMBALANCE (DEG) 0.1 LO PORT, EN = HIGH, PLO = –10dBm 5571 G12 Absolute I/Q Phase Imbalance vs LO Frequency 0.3 0.2 RF PORT, EN = HIGH, PLO = 0dBm 5571 G11 Absolute I/Q Gain Imbalance vs LO Frequency 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C RF PORT, EN = LOW –20 –30 –55 550 650 750 850 950 1050 1150 1250 RF FREQUENCY (MHz) LO PORT, EN = HIGH, PLO = 0dBm –10 –50 5571 G10 ABSOLUTE I/Q GAIN IMBALANCE (dB) LO PORT, EN = LOW S11 (dB) IMAGE REJECTION (dBc) NOISE FLOOR (dBm/Hz) 0 –30 fLO = 900MHz (FIXED) NO BASEBAND SIGNAL –161 LO and RF Port Return Loss vs Frequency Image Rejection vs LO Frequency –20 –20 650 750 850 950 1050 1150 1250 LO FREQUENCY (MHz) –16 –12 –8 –4 0 4 LO INPUT POWER (dBm) 8 5571 G15 5571 G14 5571 G13 LO Feedthrough vs LO Power 22 –40 OIP3 (dBm) 20 18 16 14 12 10 –20 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C LO FEEDTHROUGH (dBm) –38 4 –16 –12 –8 –4 0 LO INPUT POWER (dBm) 8 5571 G16 –40 –42 –44 –46 –48 fBB, 1 = 2MHz fBB, 2 = 2.1MHz Image Rejection vs LO Power –35 –50 –20 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C –16 –12 –8 –4 0 4 LO INPUT POWER (dBm) 8 5571 G17 IMAGE REJECTION (dBc) Output IP3 vs LO Power 24 –45 –50 –55 –60 –20 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C –16 –12 –8 –4 0 4 LO INPUT POWER (dBm) 8 5571 G18 5571f 5 LT5571 TYPICAL PERFORMANCE CHARACTERISTICS VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz, fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5VDC, Baseband Input Frequency fBB = 2MHz, I & Q 90° shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper sideband selection). PRF(OUT) = –10dBm (–10dBm/tone for 2tone measurements), unless otherwise noted. (Note 3) RF CW Output Power, HD2 and HD3 vs CW Baseband Voltage and Temperature 20 0 –70 –80 0 1 –40 HD2 = MAX POWER AT fLO + 2 • fBB OR fLO – 2 • fBB –50 HD3 = MAX POWER AT fLO + 3 • fBB OR fLO – 3 • fBB –60 4 5 2 3 HD3 –40 –50 –60 –70 –80 –40 HD2 = MAX POWER AT fLO + 2 • fBB OR fLO – 2 • fBB –50 HD3 = MAX POWER AT fLO + 3 • fBB OR fLO – 3 • fBB –60 2 3 4 5 5571 G19 5571 G20 Image Rejection vs CW Baseband Voltage RF Two-Tone Power (Each Tone), IM2 and IM3 vs Baseband Voltage and Temperature –50 –52 –54 –56 0 5 1 2 3 4 I AND Q BASEBAND VOLTAGE (VP-P,DIFF) 0 RF –10 –20 IM2 = POWER AT fLO + 4.1MHz –30 IM3 = MAX POWER AT fLO + 1.9MHz –40 OR fLO + 2.2MHz –50 IM3 IM2 –60 fBBI = 2MHz, 2.1MHz, 0° fBBQ = 2MHz, 2.1MHz, 90° –80 5 –20 IM2 = POWER AT fLO + 4.1MHz –30 IM3 = MAX POWER AT fLO + 1.9MHz –40 OR fLO + 2.2MHz –50 IM3 IM2 –60 fBBI = 2MHz, 2.1MHz, 0° fBBQ = 2MHz, 2.1MHz, 90° –70 –80 1 10 0.1 I AND Q BASEBAND VOLTAGE (VP-P,DIFF, EACH TONE) 5571 G24 20 LO Leakage Distribution 20 –40°C 25°C 85°C PERCENTAGE (%) 10 RF –10 Noise Floor Distribution (no RF) 25 VBB = 400mVP-P 15 5V 5.5V 4.5V 5571 G23 PERCENTAGE (%) PERCENTAGE (%) 20 RF Two-Tone Power (Each Tone), IM2 and IM3 vs Baseband Voltage and Supply Voltage 1 10 0.1 I AND Q BASEBAND VOLTAGE (VP-P,DIFF, EACH TONE) Voltage Gain Distribution –40°C 25°C 85°C 1 2 3 4 5 I AND Q BASEBAND VOLTAGE (VP-P, DIFF) 5571 G21 0 5571 G22 25 0 10 25°C 85°C –40°C –70 –58 –40 –45 PTONE (dBm), IM2, IM3 (dBc) –48 10 PTONE (dBm), IM2, IM3 (dBc) 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C –35 I AND Q BASEBAND VOLTAGE (VP-P, DIFF) –46 IMAGE REJECTION (dBc) 1 0 I AND Q BASEBAND VOLTAGE (VP-P, DIFF) –30 HD2 LO FEEDTHROUGH (dBm) –30 HD2, HD3 (dBc) HD2 5V –10 5.5V 4.5V –20 –30 RF CW OUTPUT POWER (dBm) 25°C –10 85°C –40°C –20 –40 –60 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C 0 –20 RF CW OUTPUT POWER (dBm) 0 HD3 –50 –30 10 –10 10 –20 –30 LO Feedthrough to RF Output vs CW Baseband Voltage RF RF –10 HD2, HD3 (dBc) RF CW Output Power, HD2 and HD3 vs CW Baseband Voltage and Supply Voltage 15 10 –40°C 25°C 85°C VBB = 400mVP-P 10 5 0 –6.5 –6 –5.5 –5 –4.5 –4 –3.5 –3 –2.5 –2 5571 G25 GAIN (dB) 0 –159.9 –159.6 –159.3 –159.0 NOISE FLOOR (dBm/Hz) –158.7 5571 G26 0