LT1195CJ8

LT1195 Low Power, High Speed Operational Amplifier FEATURES s s s s s s s s s s DESCRIPTIO 50MHz 165V/µs ± 20mA 12mA 7.5V/mV Gain-Bandwidth Product Unity-Gain Stable Slew Rate Output Current Low Supply Current High Open-Loop Gain Low Cost Single Supply 5V Operation Industry Standard Pinout Output Shutdown The LTC1195 is a video operational amplifier optimized for operation on single 5V and ± 5V supply. Unlike many high speed amplifiers, the LT1195 features high open-loop gain, over 75dB, and the ability to drive heavy loads to a full power bandwidth of 8.5 MHz at 6VP-P. The LT1195 has a unity-gain stable bandwidth of 50MHz, and a 60° phase margin, and consumes only 12mA of supply current, making it extremely easy to use. Because the LT1195 is a true operational amplifier, it is an ideal choice for wideband signal conditioning, fast integrators, peak detectors, active filters, and applications requiring speed, accuracy, and low cost. The LT1195 is a low power version of the popular LT1190, and is available in 8-pin miniDIPs and SO packages with standard pinouts. The normally unused pin 5 is used for a shutdown feature that shuts off the output and reduces power dissipation to a mere 15mW. APPLICATI s s s s s s S Video Cable Drivers Video Signal Processing Fast Peak Detectors Fast Integrators Video Cable Drivers Pulse Amplifiers TYPICAL APPLICATI 5V 3 CI 60pF Fast Pulse Detector RI 1k VIN RS 50Ω Pulse Detector Response + – 7 LT1195 6 D1 1N5712 OUTPUT 2 4 –5V RL 10k –5V CL 1000pF RB 10k –5V D2 1N5712 INPUT 1195 TA01 U 1195TAO2 UO UO 1 LT1195 ABSOLUTE AXI U RATI GS PACKAGE/ORDER I FOR ATIO TOP VIEW BAL 1 –IN 2 +IN 3 V– 4 8 7 6 5 BAL V+ OUT S/D 18V Differential Input Voltage ......................................... ± 6V Input Voltage ........................................................... ± VS Output Short-Circuit Duration (Note 1) ......... Continuous Operating Temperature Range LT1195M ........................................ –55°C to 125°C LT1195C ................................................ 0°C to 70°C Junction Temperature (Note 2) Plastic Package (CN8, CS8) ............................ 150°C Ceramic Package (CJ8, MJ8) .......................... 175°C Storage Temperature Range ................. –65°C to 150°C Lead Temperature (Soldering, 10 sec).................. 300°C Total Supply Voltage (V+ to V – ) ............................... ORDER PART NUMBER LT1195MJ8 LT1195CJ8 LT1195CN8 LT1195CS8 S8 PART MARKING 1195 N8 PACKAGE J8 PACKAGE 8-LEAD CERAMIC DIP 8-LEAD PLASTIC DIP S8 PACKAGE 8-LEAD PLASTIC SOIC TJMAX = 175°C, θJA = 100°C/ W (J8) TJMAX = 150°C, θJA = 100°C/ W (N8) TJMAX = 150°C, θJA = 150°C/ W (S8) + ±5V ELECTRICAL CHARACTERISTICS – VS = ±5V, CL ≤ 10pF, pin 5 open circuit, unless otherwise noted. PARAMETER Input Offset Voltage Input Offset Current Input Bias Current Input Noise Voltage Input Noise Current Input Resistance Differential Mode Common Mode Input Capacitance Input Voltage Range Common-Mode Rejection Ratio Power Supply Rejection Ratio Large-Signal Voltage Gain CONDITIONS J8, N8 Package S8 Package SYMBOL VOS IOS IB en in RIN CIN CMRR PSRR AVOL TA = 25°C MIN fO = 10kHz fO = 10kHz VOUT SR FPBW GBW tr1, tf1 tr2, tf2 tPD tS Diff AV Diff Ph Output Voltage Swing Slew Rate Full Power Bandwidth Gain-Bandwidth Product Rise Time, Fall Time Rise Time, Fall Time Propagation Delay Overshoot Settling Time Differential Gain Differential Phase AV = 1 (Note 3) VCM = – 2.5 to 3.5V VS = ±2.375V to ± 8V RL = 1k, VOUT = ± 3V RL = 150Ω, VOUT = ± 3V VS = ± 8V, RL = 1k, VOUT = ± 5V VS = ± 5V, RL = 1k VS = ± 8V, RL = 1k AV = – 1, RL = 1k, (Note 4, 9) VOUT = 6 VP-P, (Note 5) AV = 50, VOUT = ±1.5V, 20% to 80%, (Note 9) AV = 1, VOUT = ±125mV, 10% to 90% AV = 1, VOUT = ±125mV, 50% to 50% AV = 1, VOUT = ±125mV 3V Step, 0.1%, (Note 6) RL = 150Ω, AV = 2, (Note 7) RL = 150Ω, AV = 2, (Note 7) LT1195M/C TYP 3.0 3.0 0.2 ± 0.5 70 2.0 230 20 2.2 85 85 7.5 1.5 11.0 ± 4.0 ± 7.0 165 8.75 50 170 3.4 2.5 22 220 1.25 0.86 MAX 8.0 10.0 1.0 ± 2.0 –2.5 60 60 2.0 0.5 ± 3.8 ± 6.7 110 3.5 125 250 UNITS mV mV µA µA nV√Hz pA√Hz kΩ MΩ pF V dB dB V/mV V/mV V/mV V V V/µs MHz MHz ns ns ns % ns % DEGP-P 2 U W U U WW W LT1195 + ELECTRICAL CHARACTERISTICS ±5V – VS = ±5V, CL ≤ 10pF, pin 5 open circuit, unless otherwise noted. PARAMETER Supply Current Shutdown Supply Current Shutdown Pin Current Turn-On Time Turn-Off Time CONDITIONS Pin 5 at V – Pin 5 at V – Pin 5 from V – to Ground, RL = 1k Pin 5 from Ground to V –, RL = 1k SYMBOL IS IS/D tON tOFF TA = 25°C LT1195M/C TYP MAX 12 16 0.8 1.5 5 25 160 700 MIN UNITS mA mA µA ns ns 5V ELECTRICAL CHARACTERISTICS VS+ = 5V, VS –, = OV, VCM = 2.5V, CL ≤ PARAMETER Input Offset Voltage Input Offset Current Input Bias Current Input Voltage Range Common-Mode Rejection Ratio Large-Signal Voltage Gain Output Voltage Swing Slew Rate Gain-Bandwidth Product Supply Current Shutdown Supply Current Shutdown Pin Current SYMBOL VOS IOS IB CMRR AVOL VOUT SR GBW IS IS/D CONDITIONS J8, N8 Package S8 Package TA = 25°C 10pF, pin 5 open circuit, unless otherwise noted. MIN LT1195M/C TYP MAX 3.0 3.0 0.2 ± 0.5 2.0 60 0.5 3.5 85 3.0 3.8 0.25 140 45 11 0.8 5 0.4 9.0 11.0 1.0 ± 2.0 3.5 UNITS mV mV µA µA V dB V/mV V V V/µs MHz mA mA µA (Note 3) VCM = 2 V to 3.5V RL = 150Ω to Ground, VOUT = 1V to 3V RL = 150Ω to Ground VOUT High VOUT Low AV = –1, VOUT = 1V to 3V 15 1.5 25 Pin 5 at V – Pin 5 at V – + ELECTRICAL CHARACTERISTICS ±5V – VS = ±5V, pin 5 open circuit, unless otherwise noted. PARAMETER Input Offset Voltage Input VOS Drift Input Offset Current Input Bias Current Common-Mode Rejection Ratio Power Supply Rejection Ratio Large-Signal Voltage Gain Output Voltage Swing Supply Current Shutdown Supply Current Shutdown Pin Current SYMBOL VOS ∆VOS/ ∆T IOS IB CMRR PSRR AVOL VOUT IS IS/D CONDITIONS –55°C ≤ TA ≤ 125°C, (Note 10) MIN VCM = – 2.5V to 3.5V VS = ± 2.375V to ±8V RL = 1k, VOUT = ±3V RL = 150Ω, VOUT = ±3V RL = 1k Pin 5 at V –, (Note 8) Pin 5 at V – 55 55 1.50 0.25 ±3.7 LT1195M TYP 3.0 17 0.2 ±0.5 85 80 5.0 0.8 ±3.9 12 0.8 5 MAX 15.0 2.0 ±2.5 18 2.5 25 UNITS mV µV/°C µA µA dB dB V/mV V/mV V mA mA µA 3 LT1195 +5V ELECTRICAL CHARACTERISTICS – VS = ±5V, pin 5 open circuit, unless otherwise noted. PARAMETER Input Offset Voltage Input VOS Drift Input Offset Current Input Bias Current Common-Mode Rejection Ratio Power Supply Rejection Ratio Large-Signal Voltage Gain Output Voltage Swing Supply Current Shutdown Supply Current Shutdown Pin Current SYMBOL VOS ∆VOS / ∆T IOS IB CMRR PSRR AVOL VOUT IS IS/D CONDITIONS J8, N8 Package S8 Package 0°C ≤ TA ≤ 70°C LT1195C TYP 3.0 3.0 12 0.2 ± 0.5 85 90 7.5 1.5 ± 3.9 12 0.9 5 MIN MAX 10.0 15.0 1.7 ± 2.5 VCM = – 2.5V to 3.5V VS = ± 2.375V to ±5V RL = 1k, VOUT = ±3V RL = 150Ω, VOUT = ±3V RL = 1k Pin 5 at Pin 5 at V – V –, (Note 8) 60 60 2.0 0.3 ± 3.7 17 2.0 25 UNITS mV mV µV/°C µA µA dB dB V/mV V/mV V mA mA µA 5V ELECTRICAL CHARACTERISTICS VS+ = 5V, VS– SYMBOL VOS ∆VOS /∆T IOS IB CMRR VOUT IS IS/D PARAMETER Input Offset Voltage Input VOS Drift Input Offset Current Input Bias Current Input Voltage Range Common-Mode Rejection Ratio Output Voltage Swing Supply Current Shutdown Supply Current Shutdown Pin Current CONDITIONS J8, N8 Package S8 Package 0°C ≤ TA ≤ 70°C = OV, VCM = 2.5V, pin 5 open circuit, unless otherwise noted. MIN LT1195C TYP 1.0 1.0 15 0.2 ±0.5 2.0 60 3.5 85 3.75 0.15 12 0.9 5 MAX 10.0 15.0 1.7 ±2.5 3.5 UNITS mV mV µV/°C µA µA V dB V V mA mA µA (Note 3) VCM = 2 V to 3.5V RL = 150Ω to Ground VOUT High VOUT Low Pin 5 at V – , (Note 8) Pin 5 at V – 0.4 16 2.0 25 Note 1: A heat sink may be required to keep the junction temperature below absolute maximum when the output is shorted continuously. Note 2: TJ is calculated from the ambient temperature TA and power dissipation PD according to the following formats: LT1195MJ8, LT1195CJ8: TJ = TA + (PD × 100°C/ W) LT1195N: TJ = TA + (PD × 100°C/ W) LT1195CS: TJ = TA + (PD × 150°C/ W) Note 3: Exceeding the input common-mode range may cause the output to invert. Note 4: Slew rate is measured between ±1V on the output, with ±3V input step. Note 5: Full power bandwidth is calculated from the slew rate measurement: FPBW = SR/2πVP. Note 6: Settling time measurement techniques are shown in “Take the Guesswork Out of Settling Time Measurements,” EDN, September 19, 1985. Note 7: NTSC (3.58MHz). For RL = 1k, Diff AV = 0.3%, Diff Ph = 0.35°. Note 8: See Applications Information section for shutdown at elevated temperatures. Do not operate the shutdown above TJ > 125°C. Note 9: AC parameters are 100% tested on the ceramic and plastic DIP packaged parts (J8 and N8 suffix) and are sample tested on every lot of the SO packaged parts (S8 suffix). Note 10: Do not operate at AV < 2 for TA < 0°C. 4 LT1195 TYPICAL PERFOR A CE CHARACTERISTICS Input Bias Current vs Common-Mode Voltage 3.0 VS = ±5V 2.5 2.0 1.5 1.0 0.5 0 –55°C 25°C 125°C –5 –4 –3 –2 –1 0 1 2 3 COMMON-MODE VOLTAGE (V) 4 5 COMMON-MODE RANGE (V) INPUT BIAS CURRENT (µA) INPUT BIAS CURRENT (nA) –0.5 Equivalent Input Noise Voltage vs Frequency EQUIVALENT INPUT NOISE VOLTAGE (nV/√Hz) VS = ± 5V TA = 25°C RS = 0Ω EQUIVALENT INPUT NOISE CURRENT (pA/√Hz) 600 500 400 300 200 100 0 10 100 1k 10k FREQUENCY (Hz) 100k 1195 G04 10 8 6 4 2 10 100 1k 10k FREQUENCY (Hz) 100k 1195 G05 SUPPLY CURRENT (mA) Shutdown Supply Current vs Temperature 6 VS = ± 5V SHUTDOWN SUPPLY CURRENT (mA) OUTPUT VOLTAGE SWING (V) 5 4 3 2 1 VS/D = – VEE + 0.6V VS/D = – VEE + 0.4V VS/D = – VEE + 0.2V 1 OPEN-LOOP GAIN (V/V) VS/D = – VEE 0 –50 –25 50 0 25 75 TEMPERATURE (°C) 100 125 UW 1195 G01 1195 G07 Input Bias Current vs Temperature 100 VS = ±5V 0 +IB V+ –0.5 –1.0 –1.5 –2.0 Common-Mode Voltage vs Temperature V + = 1.8V TO 9V –100 –IB –200 IOS –300 2.0 1.5 1.0 0.5 V– –50 V + = – 1.8V TO –9V –400 –50 –25 0 25 75 50 TEMPERATURE (°C) 100 125 –25 0 25 50 75 TEMPERATURE (°C) 100 125 1195 G02 1195 G03 Equivalent Input Noise Current vs Frequency 14 12 VS = ± 5V TA = 25°C RS = 100k Supply Current vs Supply Voltage 16 14 –55°C 25°C 12 125°C 10 8 0 2 4 6 8 ±SUPPLY VOLTAGE (V) 10 1195 G06 Output Voltage Swing vs Load Resistance 5 VS = ± 5V 3 TA = 25°C TA = 125°C TA = – 55°C 8k 10k Open-Loop Gain vs Temperature VS = ±5V VO = ±3V RL = 1k 6k –1 TA = 25°C TA = 125°C –5 10 100 LOAD RESISTANCE (Ω) 1k 1195 G08 4k –3 2k TA = – 55°C 0 –50 RL = 150Ω –25 0 25 75 50 TEMPERATURE (°C) 100 125 1195 G09 5 LT1195 TYPICAL PERFOR A CE CHARACTERISTICS Gain and Phase vs Frequency 100 PHASE 80 VOLTAGE GAIN (dB) 80 PHASE MARGIN (DEG) GAIN-BANDWIDTH PRODUCT (MHz) OPEN-LOOP VOLTAGE GAIN (V/V) 60 40 20 0 VS = ± 5V TA = 25°C RL = 1k 1M 10M FREQUENCY (Hz) 100M 1195 G10 GAIN –20 100k Unity-Gain Frequency and Phase Margin vs Temperature 100 90 UNITY-GAIN FREQUENCY VS = ±5V RL = 1k 80 OUTPUT IMPEDANCE (Ω) 100 UNITY-GAIN FREQUENCY (MHz) 90 80 70 60 50 40 COMMON-MODE REJECTION RATIO (dB) UNITY-GAIN PHASE MARGIN 30 –50 –25 50 25 75 0 TEMPERATURE (°C) Power Supply Rejection Ratio vs Frequency 80 36 OUTPUT SHORT-CIRCUIT CURRENT (mA) POWER SUPPLY REJECTION RATIO (dB) OUTPUT SATURATION VOLTAGE (V) 60 +PSRR –PSRR VS = ± 5V TA = 25°C VRIPPLE = ± 300mV 40 20 0 –20 1k 10k 100k 1M FREQUENCY (Hz) 10M 100M 1195 G16 6 UW 0 Open-Loop Voltage Gain vs Load Resistance 100 Gain-Bandwidth Product vs Supply Voltage 60 AV = 20dB 50 TA = – 55°C TA = 25°C TA = 125°C 20k VS = ± 5V VO = ± 3V TA = 25°C 16k 60 40 20 12k 40 8k 4k 30 –20 0 100 1k LOAD RESISTANCE (Ω) 10k 1195 G11 20 0 2 4 6 8 ±SUPPLY VOLTAGE (V) 10 1195 G12 Output Impedance vs Frequency 60 VS = ± 5V TA = 25°C 10 AV = 10 1 AV = 1 0.1 Common-Mode Rejection Ratio vs Frequency VS = ± 5V TA = 25°C RL = 1k 50 40 30 20 10 0 100k PHASE MARGIN (DEG) 70 60 50 40 30 100 20 125 0.01 1k 10k 100k 1M FREQUENCY (Hz) 10M 100M 1195 G14 1M 10M FREQUENCY (Hz) 100M 1195 G15 1195 G13 Output Short-Circuit Current vs Temperature VS = ± 5V 35 34 33 32 31 30 –50 V+ –0.7 –0.8 –0.9 –1.0 –1.1 0.5 0.4 0.3 0.2 ±Output Swing vs Supply Voltage 125°C 25°C –55°C RL = RFB ±1.8V ≤ VS ≤ ±9V 125°C 25°C –55°C –25 50 0 25 75 TEMPERATURE (°C) 100 125 0.1 V– 0 2 8 6 4 SUPPLY VOLTAGE (V) 10 1195 G18 1195 G17 LT1195 TYPICAL PERFOR A CE CHARACTERISTICS Slew Rate vs Temperature 250 VS = ±5V RFB = 1k VO = ± 2V AV = – 1 4 VS = ±5V TA = 25°C RL = 1k 2 10mV 1mV OUTPUT VOLTAGE STEP (V) OUTPUT VOLTAGE STEP (V) SLEW RATE (V/µs) –SLEW RATE 200 +SLEW RATE 150 –50 –25 50 0 25 75 TEMPERATURE (°C) Large-Signal Transient Response AV = 1, RL = 1k 1195 G22 Overload Recovery 5V 3 AV = 1, VIN = 11VP-P 1195 G24 UW 100 1195 G19 Output Voltage Step vs Settling Time, AV = – 1 4 Output Voltage Step vs Settling Time, AV = 1 VS = ±5V TA = 25°C RL = 1k 2 10mV 1mV 0 0 10mV –2 1mV –2 10mV 1mV –4 –4 125 0 200 100 300 SETTLING TIME (ns) 400 1195 G20 0 200 100 300 SETTLING TIME (ns) 400 1195 G21 Large-Signal Transient Response AV = – 1, RL = 1k 1195 G23 + – 1 7 6 4 LT1195 2 8 INPUT OFFSET VOLTAGE CAN BE ADJUSTED OVER A ±150mV RANGE WITH A 1k to 10k POTENTIOMETER. 1195 G25 7 LT1195 APPLICATI S I FOR ATIO Power Supply Bypassing The LT1195 is quite tolerant of power supply bypassing. In some applications a 0.1µF ceramic disc capacitor placed 0.5 inches from the ampifier is all that is required. In applications requiring good settling time, it is important to use multiple bypass capacitors. A 0.1µF ceramic disc in parallel with a 4.7µF tantalum is recommended. Cable Terminations The LT1195 operational amplifier has been optimized as a low cost video cable driver. The ±20mA guaranteed output current enables the LT1195 to easily deliver 6VP-P into 150Ω, while operating on ± 5V supplies. Double-Terminated Cable Driver 5V 3 + – 7 LT1195 6 75Ω CABLE 2 RG 4 –5V RFB 75Ω 1195 AI01 Cable Driver Voltage Gain vs Frequency 8 6 4 VOLTAGE GAIN (dB) 2 0 –2 –4 –6 –8 –10 VS = ± 5V TA = 25°C AV = 1 RFB = 1k RG = 1k AV = 2 RFB = 1k RG = 330Ω –12 100k 1M 10M FREQUENCY (Hz) 100M 1195 AI02 When driving a cable it is important to terminate the cable to avoid unwanted reflections. This can be done in one of two ways: single termination or double termination. With single termination, the cable must be terminated at the 8 U receiving end (75Ω to ground) to absorb unwanted energy. The best performance can be obtained by double termination (75Ω in series with the output of the amplifier, and 75Ω to ground at the other end of the cable). This termination is preferred because reflected energy is absorbed at each end of the cable. When using the double termination technique it is important to note that the signal is attenuated by a factor of 2, or 6dB. This can be compensated for by taking a gain of 2, or 6dB in the amplifier. Using the Shutdown Feature The LT1195 has a unique feature that allows the amplifier to be shut down for conserving power, or for multiplexing several amplifiers onto a common cable. The amplifier will shutdown by taking pin 5 to V –. In shutdown, the amplifier dissipates 15mW while maintaining a true high impedance output state of 15k in parallel with the feedback resistors. The amplifiers must be used in a noninverting configuration for MUX applications. In inverting configurations the input signal is fed to the output through the feedback components. The following scope photos show that with very high RL, the output is truly high impedance; the output slowly decays toward ground. Additionally, when the output is loaded with as little as 1k the amplifier shuts off in 700ns. This shutoff can be under the control of HC CMOS operating between 0V and –5V. Output Shutdown 1MHz SINE WAVE GATED OFF WITH SHUTDOWN PIN AV = 1, RL = SCOPE PROBE 1195 AI03 W U UO LT1195 APPLICATI S I FOR ATIO Output Shutdown 1MHz SINE WAVE GATED OFF WITH SHUTDOWN PIN AV = 1, RL = 1k 1195 AI04 Detecting Pulses The front page shows a circuit for detecting very fast pulses. In this open-loop design, the detector diode is D1 and a level shifting or compensating diode is D2. A load resistor RL is connected to –5V, and an identical bias resistor RB is used to bias the compensating diode. Equal value resistors ensure that the diode drops are equal. A very fast pulse will exceed the amplifier slew rate and cause a long overload recovery time. Some amount of dV/dt limiting on the input can help this overload condition, however too much will delay the response. Also shown is the response to a 4VP-P input that is 150ns wide. The maximum output slew rate in the photo is 30V/µs. This rate is set by the 30mA current limit driving 1000pF. Operation on Single 5V Supply The LT1195 has been optimized for a single 5V supply. This circuit amplifies standard composite video (1VP-P including sync) by 2 and drives a double-terminated 75Ω cable. Resistors R1 and R2 bias the amplifier at 2V, allowing the sync pulses to stay within the common-mode range of the amplifier. Large coupling capacitors are required to pass the low frequency sidebands of the composite signal. A multiburst response and vector plot standard color burst are shown. 1195 AI07 U Single 5V Video Amplifier VIN 5V 1k W U UO + 3 10µF 5V 7 1000µF 6 + – LT1195 R1 3k 2 RG 1k 4 + RFB 1k 75Ω 10k 75Ω 100µF + R2 2k 1195 AI05 Video Multiburst at Pin 6 of Amplifier 3V 2V 1V 0V 1195 AI06 Vector Plot of Standard Color Burst 9 LT1195 APPLICATI S I FOR ATIO Send Color Video Over Twisted-Pair With an LT1195 it is possible to send and receive color composite video signals more than 1000 feet on a low cost twisted-pair. A bidirectional “video bus” consists of the LT1195 op amp and the LT1187 video difference amplifier. A pair of LT1195s at TRANSMIT 1, is used to generate differential signals to drive the line which is back-terminated in its characteristic impedance. The LT1187, twisted-pair receiver, converts signals from differential to single-ended. Topology of the LT1187 provides for cable compensation at the amplifier’s feedback node as shown. In this case, 1000 feet of twisted-pair is compensated with 1000pF and 50Ω to boost the 3dB bandwidth of the system from 750kHz to 4MHz. This bandwidth is adequate to pass a 3.58MHz chrome subcarrier, and the 4.5MHz sound subcarrier. Attenuation in the cable can be compensated by lowering the gain set resistor RG. At TRANSMIT 2, another pair of LT1195s serve the dual function to provide cable termination via low output impedance, and generate differential signals for TRANSMIT 2. Cable termination is made up of 15Ω and 33Ω attentuator to reduce the differential input signal to the LT1187. Maximum input signal for the LT1187 is 760mVP-P. 1.5MHz Square Wave Input and Unequalized Response Through 1000 Feet of Twisted-Pair 1195 A108 10 U 1.5MHz Square Wave Input and Equalized Response Through 1000 Feet of Twisted-Pair 1195 A109 W U UO Multiburst Pattern Passed Through 1000 Feet of Twisted-Pair 1195 A110 Vector Plot of Standard Color Burst Through 1000 Feet of Twisted-Pair 1195 A111 LT1195 APPLICATI S I FOR ATIO TRANSMIT 1 3 + LT1195 6 6 75Ω 1k 2 1k – 1k 1k 1k 2 – LT1195 6 33Ω 3 2 1 8 15Ω 15Ω 33Ω 33Ω 15Ω 15Ω 6 33Ω 3 2 1 8 LT1195 3 + S/D 75Ω 6 300Ω + 5 – LT1187 + RFB – 1000pF RG 300Ω 50Ω RECEIVE 2 SIWPLIFIED SCHEWATIC 7 V+ VBIAS VBIAS CM +3 CFF –2 +V +V 6 VOUT 5 S/D 1 BAL 8 BAL 1195 SS * SUBSTRATE DIODE, DO NOT FORWARD BIAS Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. U Bidirectional Video Bus TRANSMIT 2 3 1k 2 75Ω W W U UO + LT1195 – 1k 1k – + S/D 5 LT1187 RFB 300Ω 2 3 1000 FT TWISTED-PAIR + – + – 6 75Ω 1000pF 50Ω RG 300Ω RECEIVE 1 1195 AI12 W * 4 V– 11 LT1195 PACKAGE DESCRIPTIO CORNER LEADS OPTION (4 PLCS) 0.405 (10.287) MAX 8 7 6 5 0.290 – 0.320 (7.366 – 8.128) 0.023 – 0.045 (0.58 – 1.14) HALF LEAD OPTION 0.045 – 0.065 (1.14 – 1.65) FULL LEAD OPTION 0° – 15° 0.008 – 0.018 (0.203 – 0.460) 0.385 ± 0.025 (9.779 ± 0.635) 0.045 – 0.065 (1.14 – 1.65) 0.014 – 0.026 (0.360 – 0.660) 0.300 – 0.320 (7.620 – 8.128) 0.009 – 0.015 (0.229 – 0.381) 0.065 (1.651) TYP 0.125 (3.175) MIN 0.020 (0.508) MIN 1 2 3 4 ( +0.025 0.325 –0.015 +0.635 8.255 –0.381 ) 0.045 ± 0.015 (1.143 ± 0.381) 0.100 ± 0.010 (2.540 ± 0.254) 0.010 – 0.020 × 45° (0.254 – 0.508) 0.008 – 0.010 (0.203 – 0.254) 0.016 – 0.050 0.406 – 1.270 0.053 – 0.069 (1.346 – 1.752) 0.004 – 0.010 (0.101 – 0.254) 0.228 – 0.244 (5.791 – 6.197) 0.150 – 0.157 (3.810 – 3.988) 0°– 8° TYP 0.014 – 0.019 (0.355 – 0.483) 12 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7487 (408) 432-1900 q FAX: (408) 434-0507 q TELEX: 499-3977 U Dimensions in inches (millimeters) unless otherwise noted. J8 Package 8-Lead Ceramic DIP 0.200 (5.080) MAX 0.015 – 0.060 (0.381 – 1.524) 0.005 (0.127) MIN 0.025 (0.635) RAD TYP 1 0.125 3.175 0.100 ± 0.010 MIN (2.540 ± 0.254) 2 3 0.220 – 0.310 (5.588 – 7.874) 4 J8 0293 N8 Package 8-Lead Plastic DIP 0.045 – 0.065 (1.143 – 1.651) 0.130 ± 0.005 (3.302 ± 0.127) 8 0.400 (10.160) MAX 7 6 5 0.250 ± 0.010 (6.350 ± 0.254) 0.018 ± 0.003 (0.457 ± 0.076) N8 0392 S8 Package 8-Lead Plastic SOIC 0.189 – 0.197 (4.801 – 5.004) 8 7 6 5 0.050 (1.270) BSC 1 2 3 4 SO8 0392 LT/GP 0293 10K REV 0 • PRINTED IN USA © LINEAR TECHNOLOGY CORPORATION 1993