RH1021C-10

DICE SPECIFICATION RH1021C Precision Reference RH1021C-5 5 4 5 RH1021C-10 4 6 6 6 2 2 94 × 55 mils 94 × 55 mils PAD FUNCTION 2. 4. 5. 6. Input Ground Trim Output DIE CROSS REFERENCE LTC Finished Part Number RH1021C-5 RH1021C-10 Order DICE CANDIDATE Part Number Below RH1021C-5 DICE RH1021C-10 DICE Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 1 DICE SPECIFICATION RH1021C DICE ELECTRICAL TEST LI ITS VS = 10V, IOUT = 0, TA = 25°C unless otherwise noted. RH1021C-5 PARAMETER Output Voltage (Note 1) Line Regulation (Note 2) Load Regulation (Sourcing Current) Load Regulation (Sinking Current) Supply Current CONDITIONS RH1021C-5 7.2V ≤ VIN ≤ 10V 10V ≤ VIN ≤ 40V 0 ≤ IOUT ≤ 10mA (Note 2) 0 ≤ IOUT ≤ 10mA (Note 2) MIN 4.9975 MAX 5.0025 12 6 440 440 1.2 UNITS V ppm/V ppm/V ppm/mA ppm/mA mA VS = 15V, IOUT = 0, TA = 25°C unless otherwise noted. RH1021C-10 PARAMETER Output Voltage (Note 1) Line Regulation (Note 2) Load Regulation (Sourcing Current) Load Regulation (Shunt Mode) Supply Current (Series Mode) Minimum Current (Shunt Mode) VIN is Open CONDITIONS RH1021C-10 11.5V ≤ VIN ≤ 14.5V 14.5V ≤ VIN ≤ 40V 0 ≤ IOUT ≤ 10mA (Note 2) 1.7mA ≤ ISHUNT ≤ 10mA (Notes 2, 3) MIN 9.995 MAX 10.005 15 3 220 220 1.7 1.5 UNITS V ppm/V ppm/V ppm/mA ppm/mA mA mA Note 1: Output voltage is measured immediately after turn-on. Changes due to chip warm-up are typically less than 0.005%. Note 2: Line and load regulation are measured on a pulse basis. Output changes due to die temperature change must be taken into account separately. Rad Hard die require special handling as compared to standard IC chips. Rad Hard die are susceptible to surface damage because there is no silicon nitride passivation as on standard die. Silicon nitride protects the die surface from scratches by its hard and dense properties. The passivation on Rad Hard die is silicon dioxide that is much “softer” than silicon nitride. LTC recommends that die handling be performed with extreme care so as to protect the die surface from scratches. If the need arises to move Wafer level testing is performed per the indicated specifications for dice. Considerable differences in performance can often be observed for dice versus packaged units due to the influences of packaging and assembly on certain devices and/or parameters. Please consult factory for more information on dice performance and lot qualifications via lot sampling test procedures. Dice data sheet subject to change. Please consult factory for current revision in production. I.D.No. 66-13-1021 2 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408)432-1900 ● FAX: (408) 434-0507 ● www.linear-tech.com W Note 3: Shunt mode regulation is measured with the input open. With the input connected, shunt mode current can be reduced to 0mA. Load regulation will remain the same. the die around from the chip tray, use a Teflon-tipped vacuum wand. This wand can be made by pushing a small diameter Teflon tubing onto the tip of a steel-tipped wand. The inside diameter of the Teflon tip should match the die size for efficient pickup. The tip of the Teflon should be cut square and flat to ensure good vacuum to die surface. Ensure the Teflon tip remains clean from debris by inspecting under stereoscope. During die attach, care must be exercised to ensure no tweezers touch the top of the die. rh1021c LT/LT 1099 50 • PRINTED IN USA © LINEAR TECHNOLOGY CORPORATION 1999