RH1034-1.2

RH1034-1.2 Micropower Dual Reference DESCRIPTION The RH1034-1.2 is a micropower, precision 1.2V reference combined with a 7V auxiliary reference. The 1.2V reference is a trimmed, thin-film, band-gap, voltage reference operating on only 20μA of quiescent current. The RH1034-1.2 offers guaranteed drift, low temperature cycling hysteresis and good long-term stability. The low dynamic impedance makes the RH1034-1.2 easy to use from unregulated supplies. The 7V reference is a subsurface zener device for less demanding applications. The wafer lots are processed to Linear Technology’s inhouse Class S flow to yield circuits usable in stringent military applications. ABSOLUTE MAXIMUM RATINGS (Note 1) Operating Current ..................................................20mA Forward Current (Note 2) .......................................20mA Operating Temperature Range................ –55°C to 125°C Storage Temperature Range................... –65°C to 150°C Lead Temperature (Soldering, 10 sec) .................. 300°C L, LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. PACKAGE INFORMATION BOTTOM VIEW 1.2V 7V NC NC NC GND NC H PACKAGE 3-LEAD TO-46 METAL CAN 1 2 3 4 5 TOP VIEW 10 9 8 7 6 NC NC 1.2V 7V NC W PACKAGE 10-LEAD CERPAC BURN-IN CIRCUIT 20V 14k 19.1k 7V 1.2V RH10341.2 BC 1 RH1034-1.2 TABLE 1: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER 1.2V Reference VZ ΔVZ ΔIR Reverse Breakdown Voltage IR = 100μA Reverse Breakdown Voltage 20μA ≤ IR ≤ 2mA Change with Current 2mA ≤ IR ≤ 20mA Minimum Operating Current Temperature Coefficient rz Reverse Dynamic Impedance Low Frequency Noise Long-Term Stability 7V Reference VZ ΔVZ ΔIR Reverse Breakdown Voltage IR = 100μA Reverse Breakdown Voltage 100μA ≤ IR ≤ 1mA Change with Current 1mA ≤ IR ≤ 20mA Temperature Coefficient Long-Term Stability IR = 100μA IR = 100μA 60 20 6.70 7.30 140 250 1 1 1 6.60 7.40 190 350 2, 3 2, 3 2, 3 V mV mV ppm/°C ppm/√kHrs IR = 100μA IR = 100μA IR = 100μA, 0.1Hz ≤ f ≤ 10Hz IR = 100μA 3 4 20 1.210 1.240 2.0 8.0 20 60 1.0 1 1 1 1 1 1 1.195 1.255 4.0 15.0 30 60 2.0 2, 3 2, 3 2, 3 2, 3 2, 3 2, 3 V mV mV μA ppm/°C Ω μVP-P ppm/√kHrs CONDITIONS NOTES MIN (Preirradiation) SUBGROUP –55°C ≤ TA ≤ 125°C SUBMIN TYP MAX GROUP UNITS TA = 25°C TYP MAX TABLE 2: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER 1.2V Reference VZ ΔV Z ΔIR rz Reverse Breakdown Voltage Reverse Breakdown Voltage Change with Current Reverse Dynamic Impedance Reverse Breakdown Voltage Reverse Breakdown Voltage Change with Current IR = 100μA 20μA ≤ IR ≤ 2mA 2mA ≤ IR ≤ 20mA IR = 100μA 3 CONDTIONS (Postirradiation) TA = 25°C. 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS 1.202 1.248 1.197 1.253 1.187 1.263 1.172 1.278 1.142 1.308 2.8 8.8 1.4 3.2 9.7 1.6 4.0 11.2 2.0 5.0 14.5 2.5 7.5 22.5 3.75 V mV mV Ω 7V Reference VZ ΔV Z ΔIR IR = 100μA 100μA ≤ IR ≤ 1mA 1mA ≤ IR ≤ 20mA 6.796 7.304 6.796 7.304 6.796 7.304 6.791 7.309 6.786 7.314 150 275 150 275 150 275 150 275 150 275 V mV mV Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: Forward biasing either diode will affect the operation of the other diode. Note 3: This parameter guaranteed by “reverse breakdown voltage change with current” test. 2 RH1034-1.2 TABLE 3: POST BURN-IN ENDPOINTS AND DELTA LIMITS REQUIREMENTS TA = 25°C ENDPOINTS LIMITS SYMBOL PARAMETER VZ Reverse Breakdown Voltage CONDITIONS IR = 100μA MIN 1.210 MAX 1.240 DELTA LIMITS MIN –0.003 MAX 0.003 UNITS V TABLE 4: ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS Final Electrical Test Requirements (Method 5004) Group A Test Requirements (Method 5005) Group B and D for Class S, End Point Electrical Parameters (Method 5005) *PDA applies to subgroup 1. See PDA Test Notes. SUBGROUP 1*,2,3 1,2,3 1,2,3 PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. TOTAL DOSE BIAS CIRCUIT 20V 14k 19.1k 7V 1.2V RH10341.2 BC Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 3 RH1034-1.2 TYPICAL PERFORMANCE CHARACTERISTICS Reverse Breakdown Voltage (1.2V) 1.280 REVERSE BREAKDOWN VOLTAGE (V) 1.270 1.260 1.250 1.240 1.230 1.220 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH10341.2 G01 Reverse Breakdown Voltage Change with Current (1.2V) 4.5 20μA ≤ IR ≤ 2mA REVERSE BREAKDOWN VOLTAGE CHANGE WITH CURRENT (mV) 20 4.0 Reverse Breakdown Voltage Change with Current (1.2V) 2mA ≤ IR ≤ 20mA IR = 100μA REVERSE BREAKDOWN VOLTAGE CHANGE WITH CURRENT (mV) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH10341.2 G02 15 10 5 0 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH10341.2 G03 Reverse Breakdown Voltage (7V) 7.002 IR = 100μA REVERSE BREAKDOWN VOLTAGE (V) REVERSE BREAKDOWN VOLTAGE CHANGE WITH CURRENT (mV) 7.001 93.0 92.8 92.6 92.4 92.2 92.0 91.8 91.6 91.4 Reverse Breakdown Voltage Change with Current (7V) 100μA ≤ IR ≤ 1mA REVERSE BREAKDOWN VOLTAGE CHANGE WITH CURRENT (mV) 172 170 168 166 164 162 160 158 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH10341.2 G05 Reverse Breakdown Voltage Change with Current (7V) 1mA ≤ IR ≤ 20mA 7.000 6.999 6.998 6.997 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH10341.2 G04 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH10341.2 G06 I.D. No. 66-10-103412 4 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● LT 1008 REV A • PRINTED IN USA www.linear.com © LINEAR TECHNOLOGY CORPORATION 2008