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LBC856BLT1G

LBC856BLT1G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOT-23

  • 描述:

    通用三极管 SOT23-3 PNP Ic=100mA

  • 数据手册
  • 价格&库存
LBC856BLT1G 数据手册
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • LBC857CLT1G S-LBC857CLT1G Series ESD Rating – Machine Model: >400 V We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site 3 and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V Emitter–Base Voltage VEBO –5.0 V IC –100 mAdc LBC856 LBC857 LBC858, LBC859 LBC856 LBC857 LBC858, LBC859 Collector Current – Continuous 2 SOT–23 3 COLLECT OR 1 B ASE 2 EMIT T ER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board, (Note 1.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W PD RqJA MARKING DIAGRAM 3 xx Total Device Dissipation Alumina Substrate, (Note 2.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature PD 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg –55 to +150 °C 2 1 xx= Device Marking (See Table Below) 1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Rev.O 1/7 LESHAN RADIO COMPANY, LTD. LBC857CLT1G Series S-LBC857CLT1G Series DEVICE MARKING AND ORDERING INFORMATION Device LBC856ALT1G S-LBC856ALT1G LBC856ALT3G S-LBC856ALT3G LBC856BLT1G S-LBC856BLT1G Marking 3A Package SOT-23 Shipping 3000/Tape&Reel 3A 3B SOT-23 10000/Tape&Reel SOT-23 3000/Tape&Reel LBC856BLT3G S-LBC856BLT3G LBC857ALT1G S-LBC857ALT1G LBC857ALT1G S-LBC857ALT1G LBC857BLT1G S-LBC857BLT1G LBC857BLT3G S-LBC857BLT3G LBC857CLT1G S-LBC857CLT1G LBC857CLT1G S-LBC857CLT1G 3B SOT-23 10000/Tape&Reel 3E SOT-23 3000/Tape&Reel 3E SOT-23 10000/Tape&Reel 3F SOT-23 3000/Tape&Reel 3F SOT-23 10000/Tape&Reel 3G SOT-23 3000/Tape&Reel 3G SOT-23 10000/Tape&Reel LBC858ALT1G S-LBC858ALT1G LBC858ALT1G S-LBC858ALT1G LBC858BLT1G S-LBC858BLT1G LBC858BLT3G S-LBC858BLT3G LBC858CLT1G S-LBC858CLT1G 3J SOT-23 3000/Tape&Reel LBC858CLT3G S-LBC858CLT3G LBC859BLT1G S-LBC859BLT1G LBC859BLT1G S-LBC859BLT1G LBC859CLT1G S-LBC859CLT1G LBC859CLT3G S-LBC859CLT3G 3J SOT-23 10000/Tape&Reel 3K SOT-23 3000/Tape&Reel 3K SOT-23 10000/Tape&Reel 3L SOT-23 3000/Tape&Reel 3L SOT-23 10000/Tape&Reel 4B SOT-23 3000/Tape&Reel 4B SOT-23 10000/Tape&Reel 4C SOT-23 3000/Tape&Reel 4C SOT-23 10000/Tape&Reel Rev.O 2/7 LESHAN RADIO COMPANY, LTD. LBC857CLT1G Series S-LBC857CLT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) LBC856 Series LBC857 Series LBC858, LBC859 Series V(BR)CEO –65 –45 –30 – – – – – – V Collector–Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) LBC856 Series LBC857 Series LBC858, LBC859 Series V(BR)CES –80 –50 –30 – – – – – – V Collector–Base Breakdown Voltage (IC = –10 mA) LBC856 Series LBC857 Series LBC858, LBC859 Series V(BR)CBO –80 –50 –30 – – – – – – V Emitter–Base Breakdown Voltage (IE = –1.0 mA) LBC856 Series LBC857 Series LBC858, LBC859 Series V(BR)EBO –5.0 –5.0 –5.0 – – – – – – V ICBO – – – – –15 –4.0 nA µA 125 220 420 180 290 520 250 475 800 – – – – –0.3 –0.65 – – –0.7 –0.9 – – –0.6 – – – –0.75 –0.82 fT 100 – – MHz Output Capacitance (VCB = –10 V, f = 1.0 MHz) Cob – – 4.5 pF Noise Figure (IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) LBC856, LBC857, LBC858 Series LBC859 Series NF Collector Cutoff Current (VCB = –30 V) Collector Cutoff Current (VCB = –30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = –2.0 mA, VCE = –5.0 V) hFE LBC856A, LBC857A, LBC858A LBC856B, LBC857B, LBC858B, LBC859B LBC857C, LBC858C, LBC859C Collector–Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA) VCE(sat) Base–Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA) VBE(sat) Base–Emitter On Voltage (IC = –2.0 mA, VCE = –5.0 V) (IC = –10 mA, VCE = –5.0 V) VBE(on) – V V V SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz) dB – – – – 10 4.0 Rev.O 3/7 LESHAN RADIO COMPANY, LTD. LBC857CLT1G Series S-LBC857CLT1G Series LBC857/ LBC858 –1.0 1.5 VCE= –10 V –0.9 T A = 25°C –0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 1.0 0.7 0.5 T A = 25°C V BE(sat) @ I C /I B=10 –0.7 V BE(on) @ V CE = –10 V –0.6 –0.5 –0.4 –0.3 –0.2 0.3 V CE(sat) @ I C /I B = 10 –0.1 0 0.2 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –0.1 T A = 25°C –1.6 –1.2 IC= I C= –50 mA I C= –200 mA –10 mA I C= –100 mA I C= –20 mA –0.4 –1.0 –2.0 –5.0 –10 –20 –50 –100 I C , COLLECTOR CURRENT (mAdc) –2.0 –0.8 –0.5 Figure 2. “Saturation” and “On” Voltages θVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE, COLLECTOR– EMITTER VOLTAGE (V) I C , COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain –0.2 1.0 –55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0 –0.02 –0.1 –1.0 –10 –20 –0.2 I B , BASE CURRENT (mA) Figure 3. Collector Saturation Region –1.0 –10 –100 I C , COLLECTOR CURRENT (mA) Figure 4. Base–Emitter Temperature Coefficient 400 300 C ib 7.0 T A=25°C V, VOLTAGE (VOLTS) 5.0 C ob 3.0 2.0 fT, CURRENT– GAIN – BANDWIDTH PRODUCT (MHz) 10.0 200 100 V CE =–10V 80 T A = 25°C 60 40 30 20 1.0 –0.4 –0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current–Gain – Bandwidth Product Rev.O 4/7 LESHAN RADIO COMPANY, LTD. LBC857CLT1G Series S-LBC857CLT1G Series –1.0 T J= 25°C V CE = –5.0V T A = 25°C V, VOLTAGE (VOLTS) –0.8 2.0 1.0 0.5 0.2 –0.1–0.2 –0.4 –0.2 VCE(sat) @ I C /I B= 10 0 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 Figure 8. “On” Voltage IC = –10 mA –20mA –50mA –100mA –200mA –0.8 –0.4 TJ= 25°C –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 θVB , TEMPERATURE COEFFICIENT (mV/°C) I C , COLLECTOR CURRENT (mA) Figure 7. DC Current Gain –1.0 –1.4 –1.8 θ VB for V BE –55°C to 125°C –2.2 –2.6 –3.0 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 I B , BASE CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 9. Collector Saturation Region Figure 10. Base–Emitter Temperature Coefficient 40 C, CAPACITANCE (pF) VBE @VCE= –5.0 V I C , COLLECTOR CURRENT (mA) –1.6 0 –0.02 –0.6 –1.0–2.0 –5.0–10–20 –50–100–200 –2.0 –1.2 VBE(sat) @ I C/I B= 10 T J= 25°C 20 C ib 10 8.0 6.0 C ob 4.0 2.0 –0.1–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 fT, CURRENT– GAIN – BANDWIDTH PRODUCT T V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) LBC856 500 VCE= –5.0 V 200 100 50 20 –1.0 –10 –100 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current–Gain – Bandwidth Product Rev.O 5/7 LESHAN RADIO COMPANY, LTD. r( t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) LBC857CLT1G Series S-LBC857CLT1G Series 1.0 0.7 0.5 D=0.5 0.2 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 SINGLE PULSE 0.07 0.05 Z θJC (t) = r(t) R θJC R θJC = 83.3°C/W MAX Z θJA (t) = r(t) R θJA R θJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) – T C = P (pk) R θJC (t) P(pk) t1 t2 0.03 0.02 DUTY CYCLE, D = t 1 /t 2 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k t, TIME (ms) Figure 13. Thermal Response –200 1s 3 ms I C , COLLECTOR CURRENT (mA) –100 TJ= 25°C TA= 25°C –50 BC558 BC557 –10 BC556 –5.0 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT –2.0 –1.0 –0.5 –10 The safe operating area curves indicate I C –V CE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon T J(pk) = 150°C; T C or T A is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided T J(pk) < 150°C. T J(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. –30 –45 –65 –100 V CE , COLLECTOR–EMITTER VOLTAGE (V) Figure 14. Active Region Safe Operating Area Rev.O 6/7 10k LESHAN RADIO COMPANY, LTD. LBC857CLT1G Series S-LBC857CLT1G Series SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 7/7
LBC856BLT1G 价格&库存

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LBC856BLT1G
    •  国内价格
    • 3000+0.05004

    库存:768000

    LBC856BLT1G
    •  国内价格
    • 1+0.05718
    • 30+0.05500
    • 100+0.05282
    • 500+0.04845
    • 1000+0.04627
    • 2000+0.04496

    库存:0