LN4812LT1G
S-LN4812LT1G
30V N-Channel Enhancement-Mode MOSFET
1. FEATURES
●
VDS= 30V
●
RDS(ON), VGS@4.5V, IDS@5A = 52mΩ
●
RDS(ON), VGS@10V, IDS@6A = 38mΩ
●
We declare that the material of product compliance with
SOT23(TO-236)
RoHS requirements and Halogen Free.
●
S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
2. APPLICATIONS
High density cell design for ultra low on-resistance
Advanced trench process technology
● High power and current handling capability
●
●
3. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LN4812LT1G
LN4812LT3G
N48
N48
3000/Tape&Reel
10000/Tape&Reel
4. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Symbol
Limits
Unit
Drain–Source Voltage
Gate–to–Source Voltage – Continuous
VDSS
VGS
30
±20
V
ID
6
IDM
30
Symbol
Limits
PD
1.4
Unit
W
RΘJA
90
ºC/W
TJ,Tstg
−55∼+150
ºC
Drain Current
– Continuous TA = 25°C
– Pulsed(Note 1)
V
A
5. THERMAL CHARACTERISTICS
Parameter
Maximum Power Dissipation
Thermal Resistance,
Junction–to–Ambient(Note 2)
Junction and Storage temperature
1. Repetitive Rating: Pulse width limited by the Maximum junction temperation.
2. 1-in²2oz Cu PCB board.
Leshan Radio Company, LTD.
Rev.F Mar. 2019
1/5
LN4812LT1G, S-LN4812LT1G
30V N-Channel Enhancement-Mode MOSFET
6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)
OFF CHARACTERISTICS
Symbol
Characteristic
Drain–Source Breakdown Voltage
V(BR)DSS
(VGS = 0, ID = 250μA)
Zero Gate Voltage Drain Current
IDSS
(VDS=24V, VGS=0V)
Gate–Body Leakage Current, Forward
IGSSF
(VDS = 0 V, VGS = 20 V)
Gate–Body Leakage Current, Reverse
IGSSR
(VDS = 0 V, VGS = -20 V)
Forward Transconductance
gfs
(VDS=5V, ID=6.9A)
Min.
Typ.
Max.
30
-
-
Unit
V
μA
-
-
1
nA
-
-
100
nA
-
-
-100
S
-
15.4
-
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
(VDS = VGS, ID = 250μA)
Static Drain–Source On–State Resistance
V
1.0
1.5
3.0
-
22
38
35
55
-
610
-
mΩ
RDS(on)
(VGS = 10 V, ID = 6 A)
(VGS = 4.5 V, ID = 5 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
(VGS = 0 V, f = 1.0MHz,VDS= 15 V)
Output Capacitance
Coss
(VGS = 0 V, f = 1.0MHz,VDS= 15 V)
Reverse Transfer Capacitance
pF
-
100
-
-
77
-
td(on)
-
9
-
Crss
(VGS = 0 V, f = 1.0MHz,VDS= 15 V)
pF
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
(VDD = 15V, RL =15Ω,
ΙD = 1Α, VGEN = 10V
RG = 6Ω)
Fall Time
tr
-
14
-
td(off)
-
30
-
tf
-
5
-
-
-
1.3
3
ns
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward Voltage
VSD
(VGS = 0 V, ISD = 1 A)
Max.Diode Forward Current
IS
V
-
A
3.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%.
Leshan Radio Company, LTD.
Rev.F Mar. 2019
2/5
LN4812LT1G, S-LN4812LT1G
30V N-Channel Enhancement-Mode MOSFET
7.ELECTRICAL CHARACTERISTICS CURVES
5
5
VGS=3.0V
4.5
4
4
ID,Drain Current(A)
VGS=3.5V, 4V
ID,Drain Current(A)
VDS=6V
4.5
3.5
3
2.5
VGS=2.5V
2
3.5
150℃
3
2.5
2
1.5
1.5
1
1
0.5
0.5
25℃
-55℃
VGS=2.0V
0
0
0
1
2
3
4
VDS,Drain to Source Voltage(V)
5
0
ID vs. VDS
1
2
VGS,Gate to Source Voltage(V)
3
ID vs. VGS
0.06
10
1
150℃
25℃
-55℃
0.1
RDSon On Resistance(Ω)
IS,Diode Forward Current(A)
0.05
VGS=4V
0.04
VGS=4.5V
0.03
0.02
VGS=10V
0.01
0
0.01
0.3
0.5
0.7
0.9
VSD,Diode Forward Voltage(V)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
ID,Drain Current(A)
IS vs. VSD
Leshan Radio Company, LTD.
RDS(on) vs. ID
Rev.F Mar. 2019
3/5
LN4812LT1G, S-LN4812LT1G
30V N-Channel Enhancement-Mode MOSFET
7.ELECTRICAL CHARACTERISTICS CURVES(Con.)
0.20
0.06
ID=5.0A
VGS=4.5V,ID=5.0A
0.15
RDSon On Resistance(Ω)
RDSon On Resistance(Ω)
0.05
25℃
0.10
150℃
0.05
0.04
0.03
VGS=10V,ID=6.0A
0.02
0.01
-55℃
0.00
0
2
4
6
8
VGS,Gate to Source Voltage(V)
10
-50
-25
0
25
50
75 100 125 150
Tj,Temperature(℃)
RDS(on) vs. Tj
RDS(on) vs. VGS
1.8
700
1.7
f=1.0MHz
Ta=25℃
ID=250uA
500
1.5
Capacitance(pF)
VGSTH Threshold Voltage(V)
600
1.6
1.4
1.3
1.2
1.1
Ciss
400
300
200
1
Coss
100
0.9
Crss
0
0.8
-50
-25
0
25
50
75 100
Tj,Temperature(℃)
125
150
0
30
Capacitance
VGSTH vs. Tj
Leshan Radio Company, LTD.
10
20
VDS,Drain to Source Voltage(V)
Rev.F Mar. 2019
4/5
LN4812LT1G, S-LN4812LT1G
30V N-Channel Enhancement-Mode MOSFET
8.OUTLINE AND DIMENSIONS
Notes:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
INCHES
DIM MIN
A 0.89
NOM
MAX
MIN
NOM
MAX
0.04
0.044
1
1.11
0.035
A1
0.01
0.06
0.1
0.001 0.002 0.004
b
0.37
0.44
0.5
0.015 0.018
c
0.09
0.13
0.18
0.003 0.005 0.007
D
2.80
2.9
3.04
0.11
E
1.20
1.3
1.4
0.047 0.051 0.055
e
1.78
1.9
2.04
0.07
L
0.10
0.2
0.3
0.004 0.008 0.012
L1
HE
0.35
0.54
0.69
0.014 0.021 0.029
2.10
2.4
2.64
0.083 0.094 0.104
0°
---
10°
θ
0°
0.114
0.02
0.12
0.075 0.081
---
10°
9.SOLDERING FOOTPRINT
Leshan Radio Company, LTD.
Rev.F Mar. 2019
5/5