LP3218DT1G

LP3218DT1G 12V P-Channel Enhancement MOSFET 1. FEATURES ● Low Profile DFN 2.0x2.0x0.62 mm for Board Space Saving Ultra Low RDS(on) ● ESD Diode.Protected Gate ● ● This is a Pb-Free Device ● We declare that the material of product are Halogen Free and compliance with RoHS requirements. 2.APPLICATIONS ● Battery Switch ● High Side Load Switch 3. ORDERING INFORMATION Device Marking Shipping 32 4000/Tape&Reel LP3218DT1G 4. MAXIMUM RATINGS(Ta = 25ºC unless otherwise stated) Parameter Drain−to−Source Voltage Symbol VDSS Limits 12 Unit V Gate−to−Source Voltage VGS ±8 V Drain Current (Note 1)Steady State ID 8.2 A Pulsed Drain Current (tp = 10 µs) IDM 25 A PD 1.7 W Power Dissipation (Note 1) Steady State 3.8 t