MMBD7000LT1

LESHAN RADIO COMPANY, LTD. Dual Switching Diode MMBD7000LT1 1 ANODE 2 CATHODE 3 CATHODE/ANODE 1 2 3 MAXIMUM RATINGS(EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF I FM(surge) Value 100 200 500 Unit Vdc mAdc mAdc CASE 318–08, STYLE11 SOT– 23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board (1) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C R θ JA PD R θ JA T J , T stg DEVICEMARKING MMBD7000LT1 = M5C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)(EACH DIODE) Characteristic Symbol Min Max Unit OFFCHARACTERISTICS Reverse Breakdown Voltage (I (BR) = 100 µAdc) Reverse Voltage Leakage Current (V R = 50 Vdc) (V R = 100 Vdc) (V R = 50 Vdc,125°C) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 100 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc) (Figure 1) Capacitance(VR=0V) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. IR I R2 I R3 VF — — — 0.55 0.67 0.75 t rr C — — 1.0 3.0 100 Vdc 0.7 0.82 1.1 4.0 1.5 ns pF V (BR) 100 — Vdc µ Adc G24–1/2 LESHAN RADIO COMPANY, LTD. MMBD7000LT1 820 Ω 2.0 k 0.1µF tr tp 10% t IF t rr t +10 V 100 µH IF 0.1 µF 50 Ω OUTPUT PULSE GENERATOR DUT 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% i R(REC) = 1.0 mA INPUT SIGNAL V R IR OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. Notes: 3. t p » t rr Figure 1. Recovery Time Equivalent Test Circuit CURVES APPLICABLE TO EACH CATHODE 100 10 I F , FORWARD CURRENT (mA) T A = 85°C 10 I R, REVERSE CURRENT ( µA) T A =150°C T A =125°C 1.0 T A= –40°C T A =85°C 0.1 T A = 25°C 1.0 T A =55°C 0.01 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0 10 T A =25°C 20 30 40 50 V F , FORWARD VOLTAGE (VOLTS) V R , REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 C D , DIODE CAPACITANCE (pF) 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 8.0 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance G24–2/2