MMBT2907AWT1

LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistor PNP Silicon MMBT2907AWT1 These transistors are designed for general purpose mplifier applications. They are housed in the SOT–323/ SC–70 package which is designed for low power surface mount applications. 3 COLLECTOR 1 1 BASE 2 3 2 EMITTER CASE 419–02 , STYLE 3 SOT–323 / SC – 70 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO IC Value – 60 – 60 – 5.0 – 600 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RθJA TJ , Tstg Max 150 833 –55 to +150 Unit mW °C/W °C DEVICE MARKING MMBT2907AWT1 = 2F ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(2) (I C = – 10 mAdc, I B = 0) Collector–Emitter Breakdown Voltage (I C = – 10 mAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = –10µAdc, I C = 0) Base Cutoff Current ( V CE = –30Vdc, V EB(OFF) = –0.5Vdc ) Collector Cutoff Current ( V CE = –30Vdc, V EB(OFF) = –0.5Vdc ) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. V V (BR)CBO V (BR)CEO –60 — Vdc –60 –5.0 — — — — – 50 – 50 Vdc Vdc nAdc nAdc (BR)EBO I BL I CEX K2–1/2 LESHAN RADIO COMPANY, LTD. MMBT2907AWT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol hFE 75 100 100 100 50 VCE(sat) –– –– V BE(sat) Min Max Unit –– ON CHARACTERISTICS DC Current Gain(1) (I C =–0.1 mAdc, V CE =–10 Vdc) (I C = –1.0 mAdc, V CE = –10 Vdc) (I C = –10 mAdc, V CE = –10 Vdc) (I C = –150mAdc, V CE = –10Vdc) (I C = –500mAdc, V CE =–10 Vdc) Collector–Emitter Saturation Voltage(1) (I C = –150 mAdc, I B = –15 mAdc) (I C = –500 mAdc, I B = –50 mAdc) Base–Emitter Saturation Voltage(1) (I C = –150 mAdc, I B = –15mAdc) (I C = –500mAdc, I B = –50mAdc ) –– –– –– –– –– Vdc –0.4 –1.6 Vdc –– –– –1.3 –2.6 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product(4) (I C = –50mAdc, V CE= 20Vdc, f = 100MHz) Output Capacitance (V CB = –10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = –2.0Vdc, I C = 0, f = 1.0 MHz) f T 200 –– obo –– 8.0 30 MHz pF pF C C ibo –– SWITCHING CHARACTERISTICS Turn–On Time (V CC = –30 Vdc, Delay Time I C = –150 mAdc, I B1 = –15 mAdc) Rise Time Storage Time (V CC = –6.0 Vdc, Fall Time I C = –150 mAdc,I B1 = I B2 = 15 mAdc) Turn–Off Time 1. Pulse Test: Pulse Width