UF2805B_11

UF2805B RF Power MOSFET Transistor 5W, 100-500 MHz, 28V Features Released; RoHS Compliant 20 Jan 11 Package Outline       N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration Lower noise floor 100 MHz to 500 MHz operation ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance Symbol VDS VGS IDS PD TJ TSTG θJC Rating 65 20 1.4 14.4 200 -55 to +150 12.1 Units V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCES F (MHz) 100 300 500 ZIN (Ω) 15.0-j80.0 8.0-j43.0 4.0-j29.0 ZLOAD (Ω) 35.0+j55.0 29.0+j40.0 28.0+j29.0 VDD=28V, IDQ=50 mA, POUT=100.0 W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground ELECTRICAL CHARACTERISTICS AT 25°C Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance Symbol BVDSS IDSS IGSS VGS(TH) GM CISS COSS CRSS GP ŋD VSWR-T Min 65 2.0 80 10 50 Max 1.0 1.0 6.0 7.0 5 2.4 20:1 Units V mA µA V S pF pF pF dB % Test Conditions VGS = 0.0 V , IDS = 2.0 mA VGS = 28.0 V , VGS = 0.0 V VGS = 20.0 V , VDS = 0.0 V VDS = 10.0 V , IDS = 10.0 mA VDS = 10.0 V , IDS 1.0 mA , ∆ VGS = 1.0V, 80 μs Pulse VDS = 28.0 V , F = 1.0 MHz VDS = 28.0 V , F = 1.0 MHz VDS = 28.0 V , F = 1.0 MHz VDD = 28.0 V, IDQ = 50 mA, POUT = 5.0 W F =500 MHz VDD = 28.0 V, IDQ = 50 mA, POUT = 5.0 W F =500 MHz VDD = 28.0 V, IDQ = 50 mA, POUT = 5.0 W F =500MHz 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. UF2805B RF Power MOSFET Transistor 5W, 100-500 MHz, 28V Typical Broadband Performance Curves CAPACITANCES VS VOLTAGE F=1.0MHz CISS Released; RoHS Compliant 20 Jan 11 7 6 CAPACTANCES (pF) 5 4 3 2 1 0 5 8 POPWER OUTPUT (W) 7 6 5 4 3 2 1 0 5 POWER OUTPUT VS VOLTAGE PIN=0.4 W IDQ=5.0 mA POUT=500 W COSS CRSS 10 15 VDS(V) 20 25 30 10 15 20 VDS(V) 25 30 35 GAIN VS FREQUENCY VDD =28 V POUT=5.0 W IDQ =50 mA 30 60 EFFICIENCY VS FREQUENCY VDD=28V IDQ =50 mA POUT =5.0 W EFFICIENCY (W) 200 300 400 500 GAIN (dB) 20 55 10 50 0 100 45 100 200 300 400 500 FREQUENCY (MHz) FREQUENCY (MHz) 7 POWER OUTPUT (W) 6 5 4 3 2 1 0 0.025 POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =50 mA 100MHz 300MHz 500MHz 0.05 0.1 0.15 0.2 2 0.25 0.3 POWER INPUT (W) 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. UF2805B RF Power MOSFET Transistor 5W, 100-500 MHz, 28V TEST FIXTURE SCHEMATIC Released; RoHS Compliant 20 Jan 11 TEST FIXTURE ASSEMBLY 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.