MAPLST0810-045CF

RF Power Field Effect Transistor LDMOS, 865 — 960 MHz, 45W, 26V 5/21/04 Preliminary MAPLST0810-045CF Features Designed for 865 to 960 MHz Broadband Commercial and Base Station Applications. Typical CW RF Performance at 960MHz, 26VDC: POUT: 45W (P1dB) Gain: 17.5dB Efficiency: 50% Ruggedness: 10:1 VSWR @ 45W CW, 26V, 900MHz High Gain, High Efficiency and High Linearity Excellent Thermal Stability Package Style P-239 Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 117 -40 to +150 +200 Units Vdc Vdc W °C °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 1.5 Unit ºC/W NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 865-960 MHz, 45W, 26V MAPLST0810-045CF 5/21/04 Preliminary Characteristic DC CHARACTERISTICS @ 25ºC Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 µAdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0) Gate—Source Leakage Current (VGS = 5 Vdc, VDS = 0) Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 µA) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 350 mA) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 A) Forward Transconductance (VGS = 10 Vdc, ID = 1 A) DYNAMIC CHARACTERISTICS @ 25ºC Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 350 mA, f = 920 & 960 MHz, POUT = 45 W) Drain Efficiency (VDD = 26 Vdc, IDQ = 350 mA, f = 920 & 960 MHz, POUT = 45 W) Input Return Loss (VDD = 26 Vdc, IDQ = 350 mA, f = 920 & 960 MHz, POUT = 45 W) Output VSWR Tolerance (VDD = 26 Vdc, IDQ = 350 mA, f = 900 MHz, POUT = 45 W, VSWR = 10:1, All Phase Angles at Frequency of Tests) Symbol Min Typ Max Unit V(BR)DSS IDSS IGSS VGS(th) 65 — — 2 — — — — — 1 3 4 Vdc µAdc µAdc Vdc VDS(Q) — 4.0 — Vdc VDS(on) Gm — 0.20 — Vdc — 3.0 — S Ciss Coss Crss — — — 82 46 2.5 — — — pF pF pF GP EFF (ŋ) IRL Ψ — — — 17.5 50 12 — — — dB % dB No Degradation In Output Power Before and After Test 2 RF Power LDMOS Transistor, 865-960 MHz, 45W, 26V MAPLST0810-045CF 5/21/04 Preliminary 1 8 1 7 1 6 C W: VDD = 26/28V, IDQ = 350mA 70 60 50 40 30 Gain ( 26V) Gain ( 28V) Ef f iciency ( 26V) Ef f iciency ( 28V) 5 EDGE: VDD = 26/28V, IDQ = 350mA 4 Efficiency (%) EVM(%) 3 2 1 0 30 35 40 POUT(dBm - Avg.) 45 EVM @ 26Vdc EVM @ 28Vdc Gain(dB) 1 5 1 4 1 3 1 2 1 1 35 40 45 50 20 1 0 0 POUT(dBm ) Graph 1. CW Power Gain and Efficiency vs. Output Power Graph 2. EDGE RMS EVM vs. Output Power -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 30 2-TONE: VDD = 26/28V, IDQ = 350mA IM3(dBc) IM3 @ 26Vdc IM3 @ 28Vdc 35 40 45 POUT(dBm- Avg.) Graph 3. 2-Tone Intermodulation vs. Output Power 3 RF Power LDMOS Transistor, 865-960 MHz, 45W, 26V MAPLST0810-045CF 5/21/04 Preliminary Package Dimensions Test Fixture Circuit Dimensions M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information. 4 North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020