MRF1150MB

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1150MB/D The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Industry Standard Package • Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input Matching for Broadband Operation MRF1150MB 150 W PEAK, 960–1215 MHz MICROWAVE POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector–Base Voltage Emitter–Base Voltage Collector Current — Peak (1) Total Device Dissipation @ TC = 25°C (1) (2) Derate above 25°C Storage Temperature Range Symbol VCBO VEBO IC PD Tstg Value 70 4.0 12 583 3.33 –65 to +150 Unit Vdc Vdc Adc Watts W/°C °C CASE 332A–03, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 0.3 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 50 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) V(BR)CES V(BR)CBO V(BR)EBO ICBO 70 70 4.0 — — — — — — — — 10 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (4) (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 10 30 — — NOTES: (continued) 1. Pulse Width = 10 µs, Duty Cycle = 1%. 2. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. 4. 80 µs Pulse on Tektronix 576 or equivalent. REV 0 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 50 Vdc, IE = 0, f = 1.0 MHz) Cob — 25 32 pF FUNCTIONAL TESTS (Pulse Width = 10 µs, Duty Cycle = 1.0%) Common–Base Amplifier Power Gain (VCC = 50 Vdc, Pout = 150 W pk, f = 1090 MHz) Collector Efficiency (VCC = 50 Vdc, Pout = 150 W pk, f = 1090 MHz) Load Mismatch (VCC = 50 Vdc, Pout = 150 W pk, f = 1090 MHz, VSWR = 10:1 All Phase Angles) GPB η ψ No Degradation in Power Output 7.8 35 9.8 40 — — dB % + C2 L1 L2 C3 C4 + - VCC = 50 Vdc RF INPUT Z1 Z2 Z3 Z4 Z5 DUT Z6 Z7 Z8 Z9 C2 RF OUTPUT Z10 C1, C2 — 220 pF Chip Capacitor, 100–mil ATC C3 — 0.1 µF/100 V C4 — 47 µF/75 V Electrolytic L1, L2 — 3 Turns #18 AWG, 1/8″ ID Z1–Z10 — Distributed Microstrip Elements — See Photomaster Board Material — 0.031″ Thick Teflon–Fiberglass, εr = 2.5 Figure 1. 1090 MHz Test Circuit 200 Pout , OUTPUT POWER (WATTS pk) f = 960 MHz 150 1090 MHz 100 1215 MHz Pout , OUTPUT POWER (WATTS pk) 200 Pin = 20 W pk 17.5 W pk 150 100 15 W pk 12.5 W pk 50 VCC = 50 V tp = 10 µs D = 1% 20 25 50 VCC = 50 V tp = 10 µs D = 1% 960 1090 f, FREQUENCY (MHz) 10 W pk 1215 0 0 5 10 15 Pin, INPUT POWER (WATTS pk) 0 Figure 2. Output Power versus Input Power REV 0 Figure 3. Output Power versus Frequency 2 200 Pout , OUTPUT POWER (WATTS pk) f = 1090 MHz tp = 10 µs D = 1% Pin = 20 W pk 17.5 W pk 15 W pk 100 12.5 W pk 10 W pk 20 14 12 10 8 6 4 Po = 150 W pk VCC = 50 V tp = 10 µs D = 1% 50 0 5 10 20 30 15 25 35 VCC, SUPPLY VOLTAGE (VOLTS) 40 45 50 G PB , POWER GAIN (dB) 150 960 1090 f, FREQUENCY (MHz) 1215 Figure 4. Output Power versus Supply Voltage Figure 5. Power Gain versus Frequency 0 f = 960 MHz ZOL* 5.0 5.0 1215 Zin 1215 1090 10 Pout = 150 W pk VCC = 50 V tp = 10 µs D = 1% f MHz 15 960 1090 1215 Zin Ohms 1.5 + j9.6 5.0 + j7.5 2.4 + j5.6 ZOL* Ohms 2.6 + j4.1 2.7 + j4.6 2.8 + j5.3 f = 960 MHz 1090 10 ZOL* = Conjugate of the optimum load ZOL* = impedance into which the device ZOL* = output operates at a given output ZOL* = power, voltage, and frequency. 15 Figure 6. Series Equivalent Input/Output Impedance Pout = 150 W pk VCC = 50 V tp = 10 µs D = 1% SCALE  2 µs/DIV Figure 7. Typical Pulse Performance REV 0 3 PACKAGE DIMENSIONS F 4 1 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A C D F H J K INCHES MIN MAX 0.270 0.290 0.115 0.135 0.195 0.205 0.095 0.105 0.050 0.070 0.003 0.007 0.600 --BASE EMITTER BASE COLLECTOR MILLIMETERS MIN MAX 6.86 7.36 2.93 3.42 4.96 5.20 2.42 2.66 1.27 1.77 0.08 0.17 15.24 --- K D H SEATING PLANE A J C STYLE 1: PIN 1. 2. 3. 4. CASE 332A–03 ISSUE D Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. REV 0 4