LSF850C1
Infrared Emitting Diode
2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25 ℃) CONDITIONS ITEM SYMBOL IF=20mA Power Output PO IF=20mA Forward Voltage VF VR=5V Reverse Current IR Peak Wavelength λp IF=20mA Spectral Line Half Width Δλ IF=20mA IF=20mA Half Intensity Beam Angle θ MIN TYP 8.0 1.4 850 30 ±25 MAX 1.9 100 UNIT mW V μA nm nm deg.
FORWARD I-V CHARACTERISTICS 60 RELATIVE POWER OUTPUT(%) 50 40 30 20 10 0 0 1 2 3 FORWARD VOLTAGE(V) 250
RELATIVE POWER vs FORWARD CURRENT
FORWARD CURRENT(mA)
200
150
・High-output Power ・Compact ・High Reliability APPLICATIONS ・Optical Switches ・Optical Sensors FEATURES
① Anode ② Cathode Dimensions (Unit:mm)
100
50
0 0 10 20 30 40 50 60 FORWARD CURRENT(mA)
SPECTRAL OUTPUT 120 120 100
RADIATION PATTERN 80 70 FORWARD CURRENT(mA) 60 50 40 30 20 10 0 -30
THERMAL DERATING CURVE
1. ABSOLUTE MAXIMUM RATINGS (Ta=25 ℃) ITEM RATINGS SYMBOL Forward Current (DC) 60 IF Forward Current (Pulse)*1 0.5 IFP 5 Reverse Voltage VR 100 Power Dissipation PD Operating Temp. Topr -20 TO 85 Storage Temp. Tstg -30 TO 100 Junction Temp. 100 Tj Lead Soldering Temp.*2 260 Tls *1:Tw=10uS,T=10mS *2:Time 5 Sec max,Position:Up to 3mm from the body
UNIT mA A V mW ℃ ℃ ℃ ℃
100 RELATIVE POWER OUTPUT(%)
RELATIVE POWER OUTPUT(%)
80 60 40 20 0 -90
80
60
40
20
-60
-30
0
30
60
90
0
30
60
90
BEAM ANGLE(deg.) 0 750 850 WAVELENGTH(nm) 950
AMBIENT TEMPERATURE(℃)
To purchase this part contact Marktech Optoelectronics at
OPTRANS
800.984.5337
Marktech Optoelectronics
www.marktechopto.com
2008/6/9
很抱歉,暂时无法提供与“LSF850C1”相匹配的价格&库存,您可以联系我们找货
免费人工找货