TLOH50TF

TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) Preliminary TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) ・This material is technological examination material to aim at the product introduction. The change in the content of the characteristic might be accompanied at the final specification process. The final specification will be able to be gotten in the brokerage department when the product is designed and to get the confirmation. For part availability and ordering information please call Toll Free: 800.984.5337 Website: www.marktechopto.com | Email: info@marktechopto.com 1 2006-12-5 TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) Preliminary TOSHIBA InGaAℓP LED TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) Panel Circuit Indicators Unit: mm • • • • • • • • Lead(Pb)-free products (lead: Sn-Ag-Cu) 3 mm package InGaAℓP technology All plastic mold type Transparent lens Line-up: 3 colors (red, orange, yellow) High intensity light emission Excellent low current light output Lineup Product Name TLRH50T(F) TLSH50T(F) TLOH50T(F) TLYH50T(F) Color Red Orange Yellow InGaA lP Material JEDEC JEITA TOSHIBA Weight: 0.14 g ― ― 4-3E1A 2 2006-12-5 TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) Preliminary Maximum Ratings (Ta = 25°C) Product Name TLRH50T(F) TLSH50T(F) TLOH50T(F) TLYH50T(F) 50 4 120 −40~100 −40~120 Forward Current IF (mA) Reverse Voltage VR (V) Power Dissipation PD (mW) Operating Temperature Topr (°C) Storage Temperature Tstg (°C) Electrical and Optical Characteristics (Ta = 25°C) Product Name TLRH50T(F) TLSH50T(F) TLOH50T(F) TLYH50T(F) Unit Typ. Emission Wavelength λd 630 613 605 587 λP (644) (623) (612) (590) nm ∆λ 13 13 13 13 IF 20 20 20 20 mA Luminous Intensity IV Min Typ. IF 850 2720 1530 1530 2000 4700 5800 4400 20 20 20 20 mA Forward Voltage VF Typ. Max IF 1.9 2.0 2.0 2.0 V 2.4 2.4 2.4 2.4 20 20 20 20 mA Reverse Current IR Max VR 50 50 50 50 µA 4 4 4 4 V mcd Precautions • • • Please be careful of the following: Soldering temperature: 260°C max, soldering time: 3 s max (Soldering portion of lead: up to 1.6 mm from the body of the device) If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. 3 2006-12-5 TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) TLRH50T(F) IF – V F 100 Ta = 25°C 50 30 10000 Ta = 25°C Preliminary IV – IF (mA) IV 10 5 3 (mcd) 1000 IF Luminous intensity 1.7 1.8 1.9 2.0 2.1 2.2 Forward current 100 1 1.6 2.3 10 1 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 3 1.0 Relative luminous intensity – Wavelength IF = 20 mA Ta = 25°C IV Relative luminous intensity Relative luminous intensity 0.8 1 0.6 0.5 0.3 0.4 0.2 0.1 −20 0 20 40 60 80 0 580 600 620 640 660 680 700 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern 80 IF – Ta (mA) IF 60 Ta = 25°C 30° 40° 50° 60° 70° 80° 90° 20° 10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 Allowable forward current 40 20 0 0.2 0.4 0.6 0.8 0 0 20 40 60 80 100 120 Ambient temperature Ta (°C) 4 2006-12-5 TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) TLSH50T(F) IF – V F 100 Ta = 25°C 50 30 10000 Ta = 25°C Preliminary IV – IF (mA) (mcd) Luminous intensity 1.7 1.8 1.9 2.0 2.1 2.2 2.3 Forward current IF 10 5 3 IV 1 1.6 1000 100 10 1 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 3 1.0 Relative luminous intensity – Wavelength IF = 20 mA IV Relative luminous intensity Relative luminous intensity Ta = 25°C 0.8 1 0.6 0.5 0.3 0.4 0.2 0.1 −20 0 20 40 60 80 0 560 580 600 620 640 660 680 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern 80 IF – Ta (mA) IF 60 Ta = 25°C 30° 40° 50° 60° 70° 80° 90° 20° 10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 Allowable forward current 40 20 0 0.2 0.4 0.6 0.8 0 0 20 40 60 80 100 120 Ambient temperature Ta (°C) 5 2006-12-5 TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) TLOH50T(F) 100 Ta = 25°C 50 Preliminary IF – V F Ta = 25°C 10000 IV – IF (mA) 30 IF 10 Luminous intensity 1.7 1.8 1.9 2.0 2.1 2.2 2.3 Forward current IV 5 3 1000 1 1.6 100 1 (mcd) 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 3 1.0 Relative luminous intensity – Wavelength IF = 20 mA IV Relative luminous intensity Ta = 25°C 0.8 Relative luminous intensity 1 0.6 0.5 0.3 0.4 0.2 0.1 −20 0 20 40 60 80 0 540 560 580 600 620 640 660 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern 80 IF – Ta (mA) IF 60 Ta = 25°C 30° 40° 50° 60° 70° 80° 90° 20° 10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 Allowable forward current 40 20 0 0.2 0.4 0.6 0.8 0 0 20 40 60 80 100 120 Ambient temperature Ta (°C) 6 2006-12-5 TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) TLYH50T(F) IF – V F 100 Ta = 25°C 50 30 10000 Ta = 25°C Preliminary IV – IF (mA) (mcd) Luminous intensity 1.7 1.8 1.9 2.0 2.1 2.2 2.3 Forward current IF 10 5 3 IV 1 1.6 1000 100 10 1 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 3 1.0 Relative luminous intensity – Wavelength IF = 20 mA IV Ta = 25°C Relative luminous intensity −20 0 60 80 Relative luminous intensity 0.8 1 0.6 0.5 0.3 0.4 0.2 0.1 20 40 0 540 560 580 600 620 640 660 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern 80 IF – Ta (mA) IF 60 Ta = 25°C 30° 40° 50° 60° 70° 80° 90° 20° 10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 Allowable forward current 40 20 0 0.2 0.4 0.6 0.8 0 0 20 40 60 80 100 120 Ambient temperature Ta (°C) 7 2006-12-5 TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) RESTRICTIONS ON PRODUCT USE 000707EAC • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 8 2006-12-5