VS665N
Visible Light Emitting Diode
2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃) CONDITIONS ITEM SYMBOL IF=20mA Power Output PO IF=20mA Forward Voltage VF VR=5V Reverse Current IR Peak Wavelength λp IF=20mA Spectral Line Half Width Δλ IF=20mA IF=20mA Half Intensity Beam Angle θ IFP=20mA Rise Time Tr IFP=20mA Fall Time Tf 1MHz ,V=0V Junction Capacitance Cj IF=10mA Temp. Coefficient of PO P/T Temp. Coefficient of VF IF=10mA V/T
RELATIVE POWER vs FORWARD CURRENT 120 RELATIVE POWER OUTPUT(%) 100 80 60 40 20 0 -90
MIN 1.5
TYP 3.0 1.8 660 25 ±6 30 30 20 -0.5 -1.5
MAX 2.2 100
UNIT mW V μA nm nm deg. nS nS pF %/℃ mV/℃
FORWARD I-V CHARACTERISTICS RELATIVE POWER OUTPUT(%)
RADIATION PATTERN
FORWARD CURRENT(mA)
① Anode ・High-output Power ・Narrow Beam Angle ・High Reliability APPLICATIONS ・Color Sensor (Money-bill) ・Paper Sensor (Money-bill) ・Bar-code Reader FEATURES
120
② Cathode
60 50 40 30 20 10 0 0 1 2 3 FORWARD VOLTAGE(V)
300
200
100
SPECTRAL OUTPUT
0 0 10 20 30 40 50 60 FORWARD CURRENT(mA)
-60
-30
0
30
60
90
BEAM ANGLE(deg.)
1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) RATINGS ITEM SYMBOL 50 Forward Current (DC) IF 0.5 Forward Current (Pulse)*1 IFP Reverse Voltage 5 VR 110 Power Dissipation PD Topr Operating Temp. -20 TO 85 Tstg Storage Temp. -30 TO 100 Junction Temp. 100 Tj Lead Soldering Temp.*2 260 Tls *1:Tw=10uS,T=10mS *2:Time 5 Sec max,Position:Up to 3mm from the body
100
UNIT mA A V mW ℃ ℃ ℃ ℃
RELATIVE POWER OUTPUT(%)
THERMAL DERATING CURVE 80 FORWARD CURRENT(mA) 60 RELATIVE POWER OUTPUT(%) 50 40 30 20 10 0 -30 140
POWER OUTPUT vs TEMPERATURE IF=10mA 3 FORWARD VOLTAGE(V) 2.5 2 1.5 1 0.5 0 -30
FORWARD VOLTAGE vs TEMPERATURE IF=10mA
120 100 80 60 40 20 0 -30 0 30 60 90
60
40
20
0 610
660 WAVELENGTH(nm)
710
0
30
60
90
0
30
60
90
AMBIENT TEMPERATURE(℃)
AMBIENT TEMPERATURE(℃)
AMBIENT TEMPERATURE(℃)
OPTRANS
To purchase this part contact Marktech Optoelectronics at
800.984.5337
Marktech Optoelectronics
www.marktechopto.com
2000/10/24 125-VS665N
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