MAX9995ETXT

19-3383; Rev 1; 3/11 KIT ATION EVALU ABLE AVAIL Dual, SiGe, High-Linearity, 1700MHz to 2700MHz Downconversion Mixer with LO Buffer/Switch General Description The MAX9995 dual, high-linearity, downconversion mixer provides 6.1dB gain, +25.6dBm IIP3, and 9.8dB NF for WCDMA, TD-SCDMA, LTE, TD-LTE, and GSM/EDGE base-station applications. This device integrates baluns in the RF and LO ports, a dual-input LO selectable switch, an LO buffer, two doublebalanced mixers, and a pair of differential IF output amplifiers. The MAX9995 requires a typical LO drive of 0dBm and supply current is guaranteed to be below 380mA. These devices are available in a compact 36-pin TQFN package (6mm × 6mm) with an exposed pad. Electrical performance is guaranteed over the extended temperature range, from TC = -40°C to +85°C. Features o 1700MHz to 2700MHz RF Frequency Range o 1400MHz to 2600MHz LO Frequency Range o 40MHz to 350MHz IF Frequency Range 6.1dB Conversion Gain +25.6dBm Input IP3 9.8dB Noise Figure 66dBc 2RF - 2LO Spurious Rejection at PRF = -10dBm o Dual Channels Ideal for Diversity Receiver Applications o Integrated LO Buffer o Integrated RF and LO Baluns for Single-Ended Inputs o Low -3dBm to +3dBm LO Drive o Built-In SPDT LO Switch with 50dB LO1 - LO2 Isolation and 50ns Switching Time o 44dB Channel-to-Channel Isolation o o o o MAX9995 Applications WCDMA, TD-SCDMA, and cdma2000® 3G Base Stations LTE and TD-LTE Base Stations GSM/EDGE Base Stations PHS/PAS Base Stations Fixed Broadband Wireless Access Wireless Local Loop Private Mobile Radio Military Systems Pin Configuration/ Functional Diagram 29 LO_ADJ_M 33 IFM+ Ordering Information PART TEMP RANGE PIN-PACKAGE MAX9995ETX+ MAX9995ETX+T TC* = -40°C to +85°C 36 TQFN-EP** TC* = -40°C to +85°C 36 TQFN-EP** TOP VIEW 36 VCC 31 IND_EXTM 35 IFM_SET 32 IFM- 34 GND 28 N.C. 30 VCC RFMAIN TAPMAIN GND VCC GND VCC GND TAPDIV RFDIV 1 2 3 4 5 6 7 8 9 EXPOSED PAD* 27 LO2 GND GND GND LOSEL GND VCC GND LO1 MAX9995 26 25 24 23 22 21 20 19 +Denotes a lead(PB)-free and RoHS-compliant package. *TC = Case temperature. **EP = Exposed pad. T = Tape and reel. 10 11 12 13 14 15 16 17 LO_ADJ_D IFD_SET IFD+ IND_EXTD VCC GND IFD- VCC N.C. 18 6mm x 6mm TQFN *EXPOSED PAD ON THE BOTTOM OF THE PACKAGE cdma2000 is a registered trademark of Telecommunications Industry Association. 1 ________________________________________________________________ Maxim Integrated Products For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com. Dual, SiGe, High-Linearity, 1700MHz to 2700MHz Downconversion Mixer with LO Buffer/Switch MAX9995 ABSOLUTE MAXIMUM RATINGS VCC ........................................................................-0.3V to +5.5V LO1, LO2 to GND ...............................................................±0.3V IFM_, IFD_, IFM_SET, IFD_SET, LOSEL, LO_ADJ_M, LO_ADJ_D to GND.............-0.3V to (VCC + 0.3V) RFMAIN, RFDIV, and LO_ Input Power ..........................+20dBm RFMAIN, RFDIV Current (RF is DC shorted to GND through balun) ......................50mA Continuous Power Dissipation (Note 1) ...............................8.8W Operating Temperature Range (Note 2) .....TC = -40°C to +85°C Maximum Junction Temperature .....................................+150°C Storage Temperature Range .............................-65°C to +150°C Lead Temperature (soldering, 10s) .................................+300°C Soldering Temperature (reflow) .......................................+260°C Note 1: Based on junction temperature TJ = TC + (θJC x VCC x ICC). This formula can be used when the temperature of the exposed pad is known while the device is soldered down to a PCB. See the Applications Information section for details. The junction temperature must not exceed +150°C. Note 2: TC is the temperature on the exposed pad of the package. TA is the ambient temperature of the device and PCB. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PACKAGE THERMAL CHARACTERISTICS TQFN Junction-to-Ambient Thermal Resistance (θJA) (Note 3, 4) ....................................................................38°C/W Junction-to-Case Thermal Resistance (θJC) (Note 1, 4) ...................................................................7.4°C/W Note 3: Junction temperature TJ = TA + (θJA x VCC x ICC). This formula can be used when the ambient temperature of the PCB is known. The junction temperature must not exceed +150°C. Note 4: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a fourlayer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial. DC ELECTRICAL CHARACTERISTICS (Typical Application Circuit, no input RF or LO signals applied, VCC = 4.75V to 5.25V, TC = -40°C to +85°C. Typical values are at VCC = 5.0V, TC = +25°C, unless otherwise noted.) PARAMETER Supply Voltage SYMBOL VCC Total supply current VCC (pin 16) Supply Current ICC VCC (pin 30) IFM+/IFM- (total of both) IFD+/IFD- (total of both) LOSEL Input High Voltage LOSEL Input Low Voltage LOSEL Input Current VIH VIL IIL and IIH -10 2 0.8 +10 CONDITIONS MIN 4.75 TYP 5 332 82 97 70 70 MAX 5.25 380 90 110 90 90 V V µA mA UNITS V RECOMMENDED AC OPERATING CONDITIONS PARAMETER RF Frequency Range LO Frequency Range IF Frequency Range LO Drive Level SYMBOL fRF fLO fIF PLO (Note 5) (Note 5) (Note 5) (Note 5) CONDITIONS MIN 1700 1400 40 -3 TYP MAX 2700 2600 350 +3 UNITS MHz MHz MHz dBm 2 _______________________________________________________________________________________ Dual, SiGe, High-Linearity, 1700MHz to 2700MHz Downconversion Mixer with LO Buffer/Switch AC ELECTRICAL CHARACTERISTICS—fRF = 1700MHz TO 2200MHz (Typical Application Circuit, VCC = 4.75V to 5.25V, RF and LO ports are driven from 50Ω sources, PLO = -3dBm to +3dBm, fRF = 1700MHz to 2200MHz, fLO = 1400MHz to 2000MHz, fIF = 200MHz, with fRF > fLO, TC = -40°C to +85°C. Typical values are at VCC = 5.0V, PLO = 0dBm, fRF = 1900MHz, fLO = 1700MHz, fIF = 200MHz, and TC = +25°C, unless otherwise noted.) (Notes 6, 7) PARAMETER Conversion Gain SYMBOL GC VCC = 5.0V, TC = +25°C, PLO = 0dBm, PRF = -10dBm (Note 8) CONDITIONS fRF = 1710MHz to 1875MHz fRF = 1850MHz to 1910MHz fRF = 2110MHz to 2170MHz fRF = 1710MHz to 1875MHz fRF = 1850MHz to 1910MHz fRF = 2110MHz to 2170MHz MIN TYP 6 6.2 6.1 ±0.5 ±0.5 ±0.5 ±0.75 NF No blockers present fRF = 1710MHz to 1875MHz fRF = 1850MHz to 1910MHz fRF = 2110MHz to 2170MHz Noise Figure (with Blocker) Input 1dB Compression Point Input Third-Order Intercept Point 2RF - 2LO Spur Rejection P1dB IIP3 2x2 8dBm blocker tone applied to RF port at 2000MHz, fRF = 1900MHz, fLO = 1710MHz, PLO = -3dBm (Note 8) (Notes 8, 9) fRF = 1900MHz, fLO = 1700MHz, fSPUR = 1800MHz (Note 8) fRF = 1900MHz, fLO = 1700MHz, fSPUR = 1766.7MHz (Note 8) fLO = 1400MHz to 2000MHz fLO = 1400MHz to 2000MHz fLO = 1400MHz to 2000MHz fRF = 1700MHz to 2200MHz, fIF = 200MHz PLO1 = 0dBm, PLO2 = 0dBm (Note 10) PRF = -10dBm, RFMAIN (RFDIV) power measured at IFDIV (IFMAIN), relative to IFMAIN (IFDIV), all unused ports terminated at 50Ω 50% of LOSEL to IF settled to within 2° LO port selected LO port unselected LO driven at 0dBm, RF terminated into 50Ω (Note 11) 40 PRF = -10dBm PRF = -5dBm PRF = -10dBm PRF = -5dBm 70 60 9.5 23 9.7 9.8 9.9 22 12.6 25.6 66 dBc 61 88 dBc 78 -29 -17 -25 37 50.5 dBm dBm dBm dB dB dB dBm dBm dB ±1 ±1 ±1 dB dB dB MAX UNIT MAX9995 Gain Variation from Nominal Gain Variation with Temperature Noise Figure 3RF - 3LO Spur Rejection Maximum LO Leakage at RF Port Maximum 2LO Leakage at RF Port Maximum LO Leakage at IF Port Minimum RF-to-IF Isolation LO1 - LO2 Isolation Minimum Channel-to-Channel Isolation LO Switching Time RF Return Loss LO Return Loss IF Return Loss 3x3 40 44 dB 50 14 18 21 21 ns dB dB dB _______________________________________________________________________________________ 3 Dual, SiGe, High-Linearity, 1700MHz to 2700MHz Downconversion Mixer with LO Buffer/Switch MAX9995 AC ELECTRICAL CHARACTERISTICS—fRF = 2540MHz (Typical Application Circuit, RF and LO ports are driven from 50Ω sources, fRF > fLO, VCC = 5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 2540MHz, fLO = 2400MHz, fIF = 140MHz, TC = +25°C, unless otherwise noted.) (Note 7) PARAMETER Conversion Gain Input Third-Order Intercept Point 2RF - 2LO Spurious Response 3RF - 3LO Spurious Response LO Leakage at IF Port RF-to-IF Isolation Channel-to-Channel Isolation PRF = -10dBm, RFMAIN (RFDIV) power measured at IFDIV (IFMAIN), relative to IFMAIN (IFDIV), all unused ports terminated at 50Ω SYMBOL GC IIP3 2x2 3x3 Two tones: fRF1 = 2540MHz, fRF2 = 2541MHz, PRF = -5dBm/tone PRF = -10dBm PRF = -5dBm PRF = -10dBm PRF = -5dBm CONDITIONS MIN TYP 5.2 24.6 58 63 72 82 -45 49 48 MAX UNITS dB dBm dBc dBc dBm dB dB Note 5: Operation outside this frequency band is possible but has not been characterized. See the Typical Operating Characteristics. Note 6: Guaranteed by design and characterization. Note 7: All limits reflect losses of external components. Output measurements taken at IF outputs of Typical Application Circuit. Note 8: Production tested. Note 9: Two tones 3MHz spacing, -5dBm per tone at RF port. Note 10: Measured at IF port at IF frequency. fLO1 and fLO2 are offset by 1MHz. Note 11: IF return loss can be optimized by external matching components. Typical Operating Characteristics (Typical Application Circuit, VCC = 5.0V, PRF = -5dBm, PLO = 0dBm, LO is low-side injected for a 200MHz IF, TC = +25°C.) CONVERSION GAIN vs. RF FREQUENCY MAX9995 toc01 CONVERSION GAIN vs. RF FREQUENCY 6.4 6.3 CONVERSION GAIN (dB) 6.2 6.1 6.0 5.9 5.8 5.7 5.6 5.5 PLO = -3dBm to +3dBm MAX9995 toc02 CONVERSION GAIN vs. RF FREQUENCY 6.4 6.3 CONVERSION GAIN (dB) 6.2 6.1 6.0 5.9 5.8 5.7 5.6 5.5 VCC = 5.25V 1700 1800 1900 2000 2100 2200 VCC = 5.0V VCC = 4.75V MAX9995 toc03 8.0 7.5 7.0 CONVERSION GAIN (dB) 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 1700 1800 1900 2000 2100 TC = +85°C TC = +25°C TC = -20°C 6.5 6.5 2200 1700 1800 1900 2000 2100 2200 RF FREQUENCY (MHz) RF FREQUENCY (MHz) RF FREQUENCY (MHz) 4 _______________________________________________________________________________________ Dual, SiGe, High-Linearity, 1700MHz to 2700MHz Downconversion Mixer with LO Buffer/Switch MAX9995 Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = 5.0V, PRF = -5dBm, PLO = 0dBm, LO is low-side injected for a 200MHz IF, TC = +25°C.) INPUT IP3 vs. RF FREQUENCY MAX9995 toc04 INPUT IP3 vs. RF FREQUENCY MAX9995 toc05 INPUT IP3 vs. RF FREQUENCY VCC = 5.25V MAX9995 toc06 26.8 TC = +85°C 26.4 26.0 IIP3 (dBm) 26.6 26.4 26.2 IIP3 (dBm) 26.0 25.8 25.6 PLO = -3dBm 25.4 25.2 PLO = 0dBm PLO = +3dBm 27.0 26.6 26.2 IIP3 (dBm) 25.8 25.4 25.0 24.6 25.6 TC = -20°C 25.2 24.8 24.4 1700 1800 1900 2000 2100 2200 RF FREQUENCY (MHz) TC = +25°C VCC = 4.75V VCC = 5.0V 1700 1800 1900 2000 2100 2200 1700 1800 1900 2000 2100 2200 RF FREQUENCY (MHz) RF FREQUENCY (MHz) 2RF - 2LO vs. FUNDAMENTAL FREQUENCY MAX9995 toc07 2RF - 2LO vs. FUNDAMENTAL FREQUENCY MAX9995 toc08 2RF - 2LO vs. FUNDAMENTAL FREQUENCY PRF = -5dBm 64 62 2RF - 2LO (dBc) 60 58 56 54 52 50 VCC = 5.25V VCC = 5.0V VCC = 4.75V MAX9995 toc09 75 70 65 2RF - 2LO (dBc) 60 55 50 45 40 35 30 PRF = -5dBm 66 PRF = -5dBm 64 62 2RF - 2LO (dBc) 60 58 56 54 52 50 PLO = 0dBm PLO = +3dBm PLO = -3dBm 66 TC = +85°C TC = +25°C TC = -20°C 1700 1800 1900 2000 2100 2200 1700 1800 1900 2000 2100 2200 1700 1800 1900 2000 2100 2200 FUNDAMENTAL FREQUENCY (MHz) FUNDAMENTAL FREQUENCY (MHz) FUNDAMENTAL FREQUENCY (MHz) 3RF - 3LO vs. FUNDAMENTAL FREQUENCY MAX9995 toc10 3RF - 3LO vs. FUNDAMENTAL FREQUENCY MAX9995 toc11 3RF - 3LO vs. FUNDAMENTAL FREQUENCY 86 84 3RF - 3LO (dBc) 82 80 78 76 74 72 VCC = 4.75V VCC = 5.25V PRF = -5dBm VCC = 5.0V MAX9995 toc12 90 88 86 3RF - 3LO (dBc) 84 82 80 78 76 74 72 70 PRF = -5dBm TC = -20°C TC = +25°C 88 PRF = -5dBm 86 PLO = -3dBm 84 3RF - 3LO (dBc) 82 80 78 76 74 72 PLO = +3dBm PLO = 0dBm 88 TC = +85°C 1700 1800 1900 2000 2100 2200 1700 1800 1900 2000 2100 2200 1700 1800 1900 2000 2100 2200 FUNDAMENTAL FREQUENCY (MHz) FUNDAMENTAL FREQUENCY (MHz) FUNDAMENTAL FREQUENCY (MHz) _______________________________________________________________________________________ 5 Dual, SiGe, High-Linearity, 1700MHz to 2700MHz Downconversion Mixer with LO Buffer/Switch MAX9995 Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = 5.0V, PRF = -5dBm, PLO = 0dBm, LO is low-side injected for a 200MHz IF, TC = +25°C.) INPUT P1dB vs. RF FREQUENCY MAX9995 toc13 INPUT P1dB vs. RF FREQUENCY MAX9995 toc14 INPUT P1dB vs. RF FREQUENCY 14.2 14.0 INPUT P1dB (dBm) 13.8 13.6 13.4 13.2 13.0 VCC = 5.0V VCC = 5.25V MAX9995 toc15 14.4 TC = +25°C 14.0 INPUT P1dB (dBm) TC = +85°C 13.8 13.7 13.6 INPUT P1dB (dBm) 13.5 13.4 13.3 13.2 13.1 PLO = +3dBm PLO = -3dBm PLO = 0dBm 14.4 13.6 13.2 12.8 TC = -20°C 12.4 1700 1800 1900 2000 2100 2200 RF FREQUENCY (MHz) 12.8 12.6 12.4 13.0 12.9 1700 1800 1900 2000 2100 2200 RF FREQUENCY (MHz) VCC = 4.75V 1700 1800 1900 2000 2100 2200 RF FREQUENCY (MHz) LO SWITCH ISOLATION vs. LO FREQUENCY MAX9995 toc16 LO SWITCH ISOLATION vs. LO FREQUENCY MAX9995 toc17 LO SWITCH ISOLATION vs. LO FREQUENCY VCC = 4.75V TO 5.25V MAX9995 toc18 55 54 LO SWITCH ISOLATION (dB) 53 52 51 50 49 48 47 46 45 1400 1500 1600 1700 1800 1900 TC = +85°C TC = +25°C TC = -20°C 54 53 LO SWITCH ISOLATION (dB) PLO = -3dBm 52 PLO = 0dBm 51 PLO = +3dBm 50 49 48 47 54 53 LO SWITCH ISOLATION (dB) 52 51 50 49 48 47 2000 1400 1500 1600 1700 1800 1900 2000 1400 1500 1600 1700 1800 1900 2000 LO FREQUENCY (MHz) LO FREQUENCY (MHz) LO FREQUENCY (MHz) CHANNEL ISOLATION vs. RF FREQUENCY TC = +85°C 70 CHANNEL ISOLATION (dB) 60 50 40 30 20 1700 1800 1900 2000 2100 2200 RF FREQUENCY (MHz) TC = -20°C TC = +25°C MAX9995 toc19 CHANNEL ISOLATION vs. RF FREQUENCY MAX9995 toc20 CHANNEL ISOLATION vs. RF FREQUENCY MAX9995 toc21 80 90 80 CHANNEL ISOLATION (dB) PLO = +3dBm 70 60 PLO = -3dBm 50 40 30 1700 1800 1900 2000 2100 PLO = 0dBm 90 80 CHANNEL ISOLATION (dB) VCC = 4.75V 70 60 50 40 30 VCC = 5.25V VCC = 5.0V 2200 1700 1800 1900 2000 2100 2200 RF FREQUENCY (MHz) RF FREQUENCY (MHz) 6 _______________________________________________________________________________________ Dual, SiGe, High-Linearity, 1700MHz to 2700MHz Downconversion Mixer with LO Buffer/Switch MAX9995 Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = 5.0V, PRF = -5dBm, PLO = 0dBm, LO is low-side injected for a 200MHz IF, TC = +25°C.) LO LEAKAGE AT IF PORT vs. LO FREQUENCY MAX9995 toc22 LO LEAKAGE AT IF PORT vs. LO FREQUENCY MAX9995 toc23 LO LEAKAGE AT IF PORT vs. LO FREQUENCY MAX9995 toc24 -20 -25 LO LEAKAGE AT IF PORT (dBm) -30 -35 -40 -45 -50 -55 -60 1400 1500 1600 1700 1800 1900 TC = +85°C TC = +25°C TC = -20°C -25 -30 -35 -40 -45 -50 -55 PLO = -3dBm -25 LO LEAKAGE AT IF PORT (dBm) LO LEAKAGE AT IF PORT (dBm) -30 VCC = 5.25V -35 -40 VCC = 4.75V PLO = +3dBm PLO = 0dBm -45 VCC = 5.0V -50 2000 1400 1500 1600 1700 1800 1900 2000 1400 1500 1600 1700 1800 1900 2000 LO FREQUENCY (MHz) LO FREQUENCY (MHz) LO FREQUENCY (MHz) LO LEAKAGE AT RF PORT vs. LO FREQUENCY MAX9995 toc25 LO LEAKAGE AT RF PORT vs. LO FREQUENCY MAX9995 toc26 LO LEAKAGE AT RF PORT vs. LO FREQUENCY VCC = 4.75V TO 5.25V -25 LO LEAKAGE AT RF PORT (dBm) -30 -35 -40 -45 -50 -55 -60 MAX9995 toc27 -20 LO LEAKAGE AT RF PORT (dBm) -25 -30 -35 -40 -45 -50 -55 1400 1500 1600 1700 1800 1900 TC = +25°C TC = +85°C TC = -20°C -20 LO LEAKAGE AT RF PORT (dBm) -25 -30 -35 -40 -45 -50 PLO = -3dBm PLO = +3dBm -20 PLO = 0dBm 1800 1900 2000 2000 1400 1500 1600 1700 1400 1500 1600 1700 1800 1900 2000 LO FREQUENCY (MHz) LO FREQUENCY (MHz) LO FREQUENCY (MHz) RF-TO-IF ISOLATION vs. RF FREQUENCY MAX9995 toc28 RF-TO-IF ISOLATION vs. RF FREQUENCY 45 44 RF-TO-IF ISOLATION (dB) 43 42 41 40 39 38 37 36 40.0 39.5 1700 1800 1900 2000 2100 2200 PLO = -3dBm TO +3dBm MAX9995 toc29 RF-TO-IF ISOLATION vs. RF FREQUENCY MAX9995 toc30 45 44 RF-TO-IF ISOLATION (dB) 43 42 41 40 39 38 1700 1800 1900 2000 2100 TC = +25°C TC = -20°C TC = +85°C 46 43.0 42.5 RF-TO-IF ISOLATION (dB) 42.0 41.5 41.0 40.5 VCC = 4.75V VCC = 5.0V VCC = 5.25V 2200 1700 1800 1900 2000 2100 2200 RF FREQUENCY (MHz) RF FREQUENCY (MHz) RF FREQUENCY (MHz) _______________________________________________________________________________________ 7 Dual, SiGe, High-Linearity, 1700MHz to 2700MHz Downconversion Mixer with LO Buffer/Switch MAX9995 Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = 5.0V, PRF = -5dBm, PLO = 0dBm, LO is low-side injected for a 200MHz IF, TC = +25°C.) NOISE FIGURE vs. RF FREQUENCY MAX9995 toc31 NOISE FIGURE vs. RF FREQUENCY MAX9995 toc32 NOISE FIGURE vs. RF FREQUENCY 10.4 10.3 NOISE FIGURE (dB) 10.2 10.1 10.0 9.9 9.8 9.7 9.6 VCC = 4.75V MAX9995 toc33 14 13 12 NOISE FIGURE (dB) 11 10 9 8 7 6 1700 1800 1900 2000 2100 TC = -20°C TC = +85°C TC = +25°C 10.2 PLO = -3dBm 10.1 NOISE FIGURE (dB) PLO = 0dBm 10.0 9.9 9.8 9.7 9.6 PLO = +3dBm 10.5 VCC = 5.25V VCC = 5.0V 9.5 1700 1800 1900 2000 2100 2200 1700 1800 1900 2000 2100 2200 RF FREQUENCY (MHz) RF FREQUENCY (MHz) 2200 RF FREQUENCY (MHz) RF RETURN LOSS vs. RF FREQUENCY MAX9995 toc34 IF RETURN LOSS vs. IF FREQUENCY MAX9995 toc35 LO RETURN LOSS vs. LO FREQUENCY (LO INPUT SELECTED) MAX9995 toc36 0 PLO = -3dBm TO +3dBm 5 RF RETURN LOSS (dB) 10 15 20 25 30 1700 1800 1900 2000 2100 0 5 10 IF RETURN LOSS (dB) 15 20 25 30 35 40 45 0 5 LO RETURN LOSS (dB) 10 PLO = +3dBm 15 PLO = 0dBm 20 PLO = -3dBm 25 40 80 120 160 200 240 280 320 360 IF FREQUENCY (MHz) 1400 1500 1600 1700 1800 1900 2000 LO FREQUENCY (MHz) 2200 RF FREQUENCY (MHz) LO RETURN LOSS vs. LO FREQUENCY (LO INPUT UN SELECTED) MAX9995 toc37 SUPPLY CURRENT vs. TEMPERATURE (TC) 360 355 SUPPLY CURRENT (mA) 350 345 340 335 330 325 320 315 310 VCC = 4.75V VCC = 5.25V VCC = 5.0V MAX9995 toc38 0 PLO = -3dBm TO +3dBm 5 LO RETURN LOSS (dB) 10 15 20 25 30 35 1400 1500 1600 1700 1800 1900 365 2000 -20 -5 10 LO FREQUENCY (MHz) 25 40 55 TEMPERATURE (°C) 70 85 8 _______________________________________________________________________________________ Dual, SiGe, High-Linearity, 1700MHz to 2700MHz Downconversion Mixer with LO Buffer/Switch Pin Description PIN 1 2 3, 5, 7, 12, 20, 22, 24, 25, 26, 34 4, 6, 10, 16, 21, 30, 36 8 9 11 13, 14 15 17 18, 28 19 23 27 29 31 32, 33 35 NAME RFMAIN TAPMAIN GND VCC TAPDIV RFDIV IFD_SET IFD+, IFDIND_EXTD FUNCTION Main Channel RF Input. Internally matched to 50Ω. Requires an input DC-blocking capacitor. Main Channel Balun Center Tap. Connect a 0.033µF capacitor from this pin to the board ground. Ground Power Supply. Connect bypass capacitors as close as possible to the pin (see the Typical Application Circuit). Diversity Channel Balun Center Tap. Connect a 0.033µF capacitor from this pin to the ground. Diversity Channel RF Input. Internally matched to 50Ω. Requires an input DC-blocking capacitor. IF Diversity Amplifier Bias Control. Connect a 1.2kΩ resistor from this pin to ground to set the bias current for the diversity IF amplifier. Diversity Mixer Differential IF Output. Connect pullup inductors from each of these pins to VCC (see the Typical Application Circuit). Connect a 10nH inductor from this pin to ground to increase the RF-IF and LO-IF isolation. MAX9995 LO Diversity Amplifier Bias Control. Connect a 392Ω resistor from this pin to ground to set the LO_ADJ_D bias current for the diversity LO amplifier. N.C. LO1 LOSEL LO2 LO_ADJ_M IND_EXTM IFM-, IFM+ IFM_SET No Connection. Not internally connected. Local Oscillator 1 Input. This input is internally matched to 50Ω. Requires an input DC-blocking capacitor. Local Oscillator Select. Set this pin to high to select LO1. Set to low to select LO2. Local Oscillator 2 Input. This input is internally matched to 50Ω. Requires an input DC-blocking capacitor. LO Main Amplifier Bias Control. Connect a 392Ω resistor from this pin to ground to set the bias current for the main LO amplifier. Connect a 10nH inductor from this pin to ground to increase the RF-IF and LO-IF isolation. Main Mixer Differential IF Output. Connect pullup inductors from each of these pins to VCC (see the Typical Application Circuit). IF Main Amplifier Bias Control. Connect a 1.2kΩ resistor from this pin to ground to set the bias current for the main IF amplifier. Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple ground vias to provide heat transfer out of the device into the PCB ground planes. These multiple via grounds are also required to achieve the noted RF performance. — EP _______________________________________________________________________________________ 9 Dual, SiGe, High-Linearity, 1700MHz to 2700MHz Downconversion Mixer with LO Buffer/Switch MAX9995 Detailed Description The MAX9995 dual, high-linearity, downconversion mixer provides 6.1dB gain and +25.6dBm IIP3, with a 9.8dB noise figure. Integrated baluns and matching circuitry allow 50Ω single-ended interfaces to the RF and LO ports. A single-pole, double-throw (SPDT) LO switch provides 50ns switching time between LO inputs, with 50dB LO-to-LO isolation. Furthermore, the integrated LO buffer provides a high drive level to the mixer core, reducing the LO drive required at the MAX9995’s inputs to -3dBm. The IF port incorporates a differential output, which is ideal for providing enhanced 2RF - 2LO performance. Specifications are guaranteed over broad frequency ranges to allow for use in WCDMA, TD-SCDMA, LTE, TD-LTE, and GSM/EDGE base stations. The MAX9995 is specified to operate over an RF input range of 1700MHz to 2700MHz, an LO range of 1400MHz to 2600MHz, and an IF range of 40MHz to 350MHz. Operation beyond this is possible; however, performance is not characterized. This device is available in a compact 6mm x 6mm, 36-pin TQFN package with an exposed pad. A two-stage internal LO buffer allows a wide input power range for the LO drive. All guaranteed specifications are for an LO signal power from -3dBm to +3dBm. The on-chip low-loss balun, along with an LO buffer, drives the double-balanced mixer. All interfacing and matching components from the LO inputs to the IF outputs are integrated on-chip. High-Linearity Mixers The core of the MAX9995 is a pair of double-balanced, high-performance passive mixers. Exceptional linearity is provided by the large LO swing from the on-chip LO buffer. When combined with the integrated IF amplifiers, the cascaded IIP3, 2RF - 2LO rejection, and NF performance is typically +25.6dBm, 66dBc, and 9.8dB, respectively. Differential IF Output Amplifiers The MAX9995 mixers have an IF frequency range of 40MHz to 350MHz. The differential, open-collector IF output ports require external pullup inductors to VCC. Note that these differential outputs are ideal for providing enhanced 2RF - 2LO rejection performance. Singleended IF applications require a 4:1 balun to transform the 200Ω differential output impedance to a 50Ω singleended output. After the balun, VSWR is typically 1.5:1. RF Input and Balun The MAX9995’s two RF inputs (RFMAIN and RFDIV) are internally matched to 50Ω, requiring no external matching components. DC-blocking capacitors are required as the inputs are internally DC shorted to ground through the on-chip baluns. Input return loss is typically 14dB over the entire RF frequency range of 1700MHz to 2700MHz. Applications Information Input and Output Matching The RF and LO inputs are internally matched to 50Ω. No matching components are required. Return loss at each RF port is typically 14dB over the entire input range (1700MHz to 2700MHz), and return loss at the LO ports is typically 18dB (1400MHz to 2000MHz). RF and LO inputs require only DC-blocking capacitors for interfacing. The IF output impedance is 200 Ω (differential). For evaluation, an external low-loss 4:1 (impedance ratio) balun transforms this impedance down to a 50Ω singleended output (see the Typical Application Circuit). LO Input, Switch, Buffer, and Balun The mixers can be used for either high-side or low-side injection applications with an LO frequency range of 1400MHz to 2600MHz. As an added feature, the MAX9995 includes an internal LO SPDT switch that can be used for frequency-hopping applications. The switch selects one of the two single-ended LO ports, allowing the external oscillator to settle on a particular frequency before it is switched in. LO switching time is typically less than 50ns, which is more than adequate for virtually all GSM applications. If frequency hopping is not employed, set the switch to either of the LO inputs. The switch is controlled by a digital input (LOSEL): logic-high selects LO1, and logic-low selects LO2. LO1 and LO2 inputs are internally matched to 50Ω, requiring only a 22pF DC-blocking capacitor. Bias Resistors Bias currents for the LO buffer and the IF amplifier are optimized by fine tuning the resistors (R1, R2, R4, and R5). If reduced current is required at the expense of performance, contact the factory. If the ±1% bias resistor values are not readily available, substitute standard ±5% values. 10 ______________________________________________________________________________________ Dual, SiGe, High-Linearity, 1700MHz to 2700MHz Downconversion Mixer with LO Buffer/Switch INDEXTM and INDEXTD Inductors Short INDEXTM and INDEXTD to ground using 0 Ω resistors. For applications requiring improved RF-to-IF and LO-to-IF isolation, use 10nH inductors (L3 and L6) in place of the 0Ω resistors. However, to ensure stable operation, the mixer IF ports must be presented with low common-mode load impedance. Contact the factory for details. Since approximately 100mA flows through INDEXTM and INDEXTD, it is important to use low-DCR wire-wound inductors. Table 1. Component Values COMPONENT C1, C8 C2, C7 C3, C6 C4, C5, C14, C16 C9, C13, C15, C17, C18 C10, C11, C12, C19, C20, C21 L1, L2, L4, L5 L3, L6 R1, R4 R2, R5 R3, R6 T1, T2 VALUE 4pF 10pF 0.033µF 22pF 0.01µF 150pF 330nH 10nH 1.21kΩ 392Ω 10Ω 4:1 (200:50) DESCRIPTION Microwave capacitors (0402) Microwave capacitors (0402) Microwave capacitors (0603) Microwave capacitors (0402) Microwave capacitors (0402) Microwave capacitors (0603) Wire-wound high-Q inductors (0805) Wire-wound high-Q inductors (0603) ±1% resistors (0402) ±1% resistors (0402) ±1% resistors (1206) IF baluns MAX9995 Layout Considerations A properly designed PCB is an essential part of any RF/microwave circuit. Keep RF signal lines as short as possible to reduce losses, radiation, and inductance. For the best performance, route the ground pin traces directly to the exposed pad under the package. The PCB exposed pad MUST be connected to the ground plane of the PCB. It is suggested that multiple vias be used to connect this pad to the lower-level ground planes. This method provides a good RF/thermal-conduction path for the device. Solder the exposed pad on the bottom of the device package to the PCB. The MAX9995 evaluation kit can be used as a reference for board layout. Gerber files are available upon request at www.maxim-ic.com. Power-Supply Bypassing Proper voltage-supply bypassing is essential for highfrequency circuit stability. Bypass each VCC pin with a capacitor as close as possible to the pin ( Typical Application Circuit). Chip Information PROCESS: SiGe BiCMOS Package Information For the latest package outline information and land patterns (footprints), go to www.maxim-ic.com/packages. Note that a “+”, “#”, or “-” in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing pertains to the package regardless of RoHS status. PACKAGE TYPE 36 TQFN-EP PACKAGE CODE T3666+2 OUTLINE NO. 21-0141 LAND PATTERN NO. 90-0049 Exposed Pad RF/Thermal Considerations The exposed pad (EP) of the MAX9995’s 36-pin TQFNEP package provides a low thermal-resistance path to the die. It is important that the PCB on which the MAX9995 is mounted be designed to conduct heat from the EP. In addition, provide the EP with a lowinductance path to electrical ground. The EP MUST be soldered to a ground plane on the PCB, either directly or through an array of plated via holes. ______________________________________________________________________________________ 11 Dual, SiGe, High-Linearity, 1700MHz to 2700MHz Downconversion Mixer with LO Buffer/Switch MAX9995 Typical Application Circuit C19 T1 VCC L1 R3 C21 IF MAIN OUTPUT L2 4:1 R1 VCC C20 L3 R2 VCC LO_ADJ_M IFM_SET GND IFM- IND_EXTM C18 C17 IFM+ C1 RF MAIN INPUT 28 N.C. VCC 36 35 34 33 32 31 30 VCC 29 RFMAIN TAPMAIN C16 1 2 3 4 5 6 7 8 9 EXPOSED PAD 27 LO2 GND GND GND LOSEL GND VCC VCC GND LO1 C14 C15 LO SELECT LO2 MAX9995 26 25 24 23 22 21 20 19 C3 VCC C2 GND VCC C4 VCC C5 C6 GND VCC GND C7 TAPDIV RFDIV C8 RF DIV INPUT LO1 10 11 12 13 14 15 16 17 LO_ADJ_D IND_EXTD IFD_SET GND IFD+ VCC C9 R4 IFD- N.C. VCC VCC 18 R5 VCC C13 L6 C11 T2 L5 VCC R6 C12 L4 4:1 IF DIV OUTPUT C10 12 ______________________________________________________________________________________ Dual, SiGe, High-Linearity, 1700MHz to 2700MHz Downconversion Mixer with LO Buffer/Switch Revision History REVISION NUMBER 0 1 REVISION DATE 8/04 3/11 Initial release Updated the band coverage throughout the data sheet DESCRIPTION PAGES CHANGED — 1–13 MAX9995 Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 13 © 2011 Maxim Integrated Products Maxim is a registered trademark of Maxim Integrated Products, Inc.