27C1512T

27C1512T 512Kb (32K x 16-bit) OTP EPROM MCM Memory Logic Diagram FEATURES: • 32K x 16 Bit OTP EPROM organization • RAD-PAK® radiation-hardened against natural space radiation • Total dose hardness: - > 100 Krad (Si), depending upon space mission • Excellent Single Event Effects: - SELTH LET: > 80 MeV/mg/cm2 - SEUTH LET: > 80 Mev/mg/cm2 • Package: - 40 pin RAD-PAK® DIP • Low power consumption: - Active mode: 500 mW @ 10 MHz - Standby mode: < 11 mW • High speed page and word programming: - Page programming time: 14 sec (typ) • Programming power supply: - VPP = 12.5 V ± 0.3 V • One-time Programmable • Pin Arrangement - Flash memory and mask ROM compatible DESCRIPTION: Maxwell Technologies’ 27C1512T high density 512K OneTime Programmable Electrically Programmable Read Only Memory multi-chip module (MCM) features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 27C1512T features fast address times and low power dissipation. The 27C1512T offers high speed programming using page programming mode. Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK® provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Maxwell Technologies self-defined Class K. 01.06.05 REV 4 All data sheets are subject to change without notice 1 (858) 503-3300- Fax: (858) 503-3301- www.maxwell.com ©2005 Maxwell Technologies All rights reserved. 512Kb (32K x 16-bit) - OTP EPROM MCM TABLE 1. 27C1512T PINOUT DESCRIPTION PIN 21-29, 31-36 19-12, 10-3 2 20 40 1 11, 30 39 37, 38 SYMBOL A0 - A14 I/O0 - I/O15 CE OE VCC VPP VSS PGM NC DESCRIPTION Address Input/Output Chip Enable Output Enable Power Supply Programming Supply Ground Programming Enable No Connection 27C1512T Memory TABLE 2. 27C1512T ABSOLUTE MAXIMUM RATINGS PARAMETER Supply Voltage 1 Programming Voltage A9 Voltage Weight Thermal Impedance Operating Temperature Range Storage Temperature Range 1. Relative to VSS. 2. VIN, VOUT, and VID min = -1.0V for pulse width < 20 ns. 2 1 1,2 SYMBOL VCC VPP VIN, VOUT VID MIN -0.6 -0.6 -0.6 -0.6 --55 -65 MAX 7.0 13.5 7.0 13.0 14.5 1.23 +125 +150 UNIT V V V V Grams °C/W °C °C All Input and Output Voltage ΘJC TOPR TSTG TABLE 3. 27C1512T RECOMMENDED OPERATING CONDITIONS PARAMETER Supply Voltage Input Voltage Operating Temperature Range SYMBOL VCC VIL VIH TOPR MIN 4.5 -0.3 2.2 -55 MAX 5.5 0.8 VCC +0.3 +125 UNITS V V °C 01.06.05 REV 4 All data sheets are subject to change without notice 2 ©2005 Maxwell Technologies. All rights reserved. 512Kb (32K x 16-bit) - OTP EPROM MCM TABLE 4. 27C1512T CAPACITANCE PARAMETER Input Capacitance Output Capacitance 1. VIN = VOUT = 0V. 2. TA = 25 oC, f = 1 MHz. 3. Guaranteed by design. SYMBOL CIN COUT 1,2, 3 27C1512T MIN --MAX 10 15 UNIT pF pF TABLE 5. 27C1512T MODE SELECTION 1,2 MODE READ OUTPUT DISABLE STANDBY PROGRAM PROGRAM VERIFY PAGE DATA LATCH PAGE PROGRAM PROGRAM INHIBIT VPP VCC VCC VCC VPP VPP VPP VPP VCC VPP VPP VPP IDENTIFIER 1. X = Don’t care. 2. 11.5V < VH < 12.5V. VCC VCC VCC VCC VCC VCC VCC VCC VCC VCC VCC VCC VCC VCC CE VIL VIL VIH VIL VIL VIH VIH VIL VIL VIH VIH VIL OE VIL VIH X VIH VIL VIL VIH VIL VIH VIL VIH VIL PGM VIH VIH X VIL VIH VIH VIL VIL VIH VIL VIH VIH A9 X X X X X X X X X X X VH2 I/O DOUT High-Z High-Z DIN DOUT DIN High-Z High-Z High-Z High-Z High-Z ID Memory 01.06.05 REV 4 All data sheets are subject to change without notice 3 ©2005 Maxwell Technologies. All rights reserved. 512Kb (32K x 16-bit) - OTP EPROM MCM 27C1512T TABLE 6. 27C1512T DC ELECTRICAL CHARACTERISTICS FOR READ OPERATION (VCC = 5V ±10%, VPP = VSS, TA = -55 TO +125° C, UNLESS OTHERWISE SPECIFIED) PARAMETER Input Leakage Current Output Leakage Current High Low Standby VCC Current Operating VCC Current TEST CONDITION VIN = 5.5V VIN @ 0V VOUT = 5.5V VOUT = 0.45V CE = VIH IOUT = 0 mA, CE = VIL IOUT = 0 mA, f = 5 MHz IOUT = 0 mA, f = 10 MHz VPP = 5.5V SYMBOL SUBGROUPS ILI ILI IOH IOL ISB ICC1 ICC2 ICC3 IPP1 VIH1 VIL1 IOH = -800 µ A IOL = 4.2 mA VOH VOL 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 --4.0 -----2.2 -2.4 --60 60 100 1 ----MIN -4 TYP ---4 -2 ---40 -0.8 -0.45 mA mA MAX 2 -UNIT µA µA µA VPP Current Input Voltage Output Voltage µA V Memory V TABLE 7. 27C1512T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1 (VCC = 5V + 10%, VPP = VSS, TA = -55 TO +125° C, UNLESS OTHERWISE SPECIFIED) PARAMETER Address Access Time Chip Enable Access Time Output Enable Access TIme Output Hold to Address Change Output Disable to High-Z 2 TEST CONDITION CE = OE = VIL OE = VIL CE = VIL CE = OE = VIL CE = VIL SYMBOL tACC tCE tOE tOH tDF SUBGOUPS 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 MIN ---0 0 MAX 200 200 70 -50 UNIT ns ns ns ns ns 1. Test conditions: - Input pulse levels 0.45V/2.4V - Input rise and fall times < 10 ns - Output load 1 TTL gate + 100pF (including scope and jig) - Referenced levels for measuring timing0.8V/2.0V 2. tDF is defined as the time at which the output becomes an open circuit and data is no longer driven. TABLE 8. 27C1512T DC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATIONS 1,2,3,4 (VCC = 6.25V + 0.25V, VPP = 12.5V + 0.3V, TA = 25° C +5° C) PARAMETER Input Leakage Current TEST CONDITION VIN = 0V to VCC 01.06.05 REV 4 SYMBOL ILI SUBGROUP 1 MIN -- MAX 2 UNIT µA All data sheets are subject to change without notice 4 ©2005 Maxwell Technologies. All rights reserved. 512Kb (32K x 16-bit) - OTP EPROM MCM (VCC = 6.25V + 0.25V, VPP = 12.5V + 0.3V, TA = 25° C +5° C) PARAMETER Operating VCC Current Operating VPP Current Input Voltage 5 CE = PGM = VIL TEST CONDITION SYMBOL ICC IPP VIH VIL Output Voltage IOH = -400 µ A IOH = 2.1 mA 1. VCC must be applied before VPP and removed after VPP. 2. VPP must not exceed 13V, including overshoot. 3. Do not change VPP from VIL to 12.5V or 12.5V to VIL when CE = low. VOH VOL SUBGROUP 1 1 1 1 1 1 MIN --2.2 -2.4 -- 27C1512T MAX 30 80 -0.8 -0.45 V UNIT mA mA V TABLE 8. 27C1512T DC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATIONS 1,2,3,4 4. DC electrical parameters for programming operations are not tested. These parameters are guaranteed by design. 5. Device reliability may be adversely be affected if the device is installed or removed while VPP = 12.5V. Memory TABLE 9. 27C1512T AC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATIONS 1,2 (VCC = 6.25V + 0.25V, VPP = 12.5V + 0.3V, TA = -55 TO +125° C) PARAMETER Address Setup Time Address Hold Time Data Setup Time Data Hold Time Chip Enable Setup TIme VPP Setup Time VCC Setup Time Output Enable Setup Time Output Disable Time PGM Initial Programming Pulse Width PGM Overprogramming Pulse Width Data Valid from Output Enable Time Output Enable Pulse During Data Latch Output Enable Hold Time Chip Enable Hold Time PGM Setup TIme SYMBOL tAS tAH tDS tDH tCES tVPS tVCS tOES tDF 3 tPW tOPW tOE tLW tOEH tCEH tPGMS SUBGROUPS 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 MIN 2 0 2 2 2 2 2 2 0 0.19 0.19 0 1 2 2 2 MAX --------130 0.21 5.25 150 ----UNIT µs µs µs µs µs µs µs µs ns ms ms ns µs µs µs µs 01.06.05 REV 4 All data sheets are subject to change without notice 5 ©2005 Maxwell Technologies. All rights reserved. 512Kb (32K x 16-bit) - OTP EPROM MCM 1. Test conditions: - Input pulse levels 0.45V - Input rise and fall times < 20 ns - Referenced levels for measuring timing 0.8V/2.0V 27C1512T 2. AC electrical parameters for programming operations are not tested. These parameters are guaranteed by design. 3. tDF is defined as the time at which the output becomes an open circuit and data is no longer driven. FIGURE 1. READ TIMING WAVEFORM Memory 01.06.05 REV 4 All data sheets are subject to change without notice 6 ©2005 Maxwell Technologies. All rights reserved. 512Kb (32K x 16-bit) - OTP EPROM MCM FIGURE 2. BYTE PROGRAMMING FLOWCHART START 27C1512T SET PAGE PROG. MODE VPP = 12.5 ± 0.3V VCC = 6.25V ± 0.25V Address = 0 n=0 n+1 n Program tPW = 1 ms ±5% Memory Address + 1 Address VERIFY NO GO GO Program tOPW = 0.2 ms n = 25 NO YES NO Last Address? YES SET READ MODE VCC = 5.0 ± 0.5V VPP = VCC READ All Address NO GO GO END FAIL 01.06.05 REV 4 All data sheets are subject to change without notice 7 ©2005 Maxwell Technologies. All rights reserved. 512Kb (32K x 16-bit) - OTP EPROM MCM FIGURE 3. BYTE PROGRAMMING TIMING WAVEFORM 27C1512T Memory 01.06.05 REV 4 All data sheets are subject to change without notice 8 ©2005 Maxwell Technologies. All rights reserved. 512Kb (32K x 16-bit) - OTP EPROM MCM FIGURE 4. PAGE PROGRAMMING FLOWCHART START A 27C1512T SET PAGE PROG. MODE VPP = 12.5 ± 0.3V VCC = 6.25V ± 0.25V n+1 Address = 0 SET PAGE PROG. MODE/VERIFY MODE VPP = 12.5 ± 0.3V VCC = 6.0V ± 0.25V n n=0 Latch Program tPW = 0.2 ms ±5% Address + 1 Address Address + 1 Address VERIFY Latch GO B Program tOPW = 0.2 ms NO GO n = 25 NO YES B Memory Address + 1 Address Latch NO Last Address? YES SET READ MODE VCC = 5.0 ± 0.5V VPP = VCC Address + 1 Address Latch A READ All Address GO END NO GO FAIL 01.06.05 REV 4 All data sheets are subject to change without notice 9 ©2005 Maxwell Technologies. All rights reserved. 512Kb (32K x 16-bit) - OTP EPROM MCM FIGURE 5. PAGE PROGRAMMING TIMING WAVEFORM 27C1512T Memory 01.06.05 REV 4 All data sheets are subject to change without notice 10 ©2005 Maxwell Technologies. All rights reserved. 512Kb (32K x 16-bit) - OTP EPROM MCM 27C1512T Memory 40 PIN RAD-PAK® DIP SYMBOL MIN A b b2 c D E e eA eA/2 L Q S1 S2 N 0.140 0.015 0.005 0.005 -0.014 0.045 0.008 -0.510 DIMENSION NOM 0.152 0.018 0.050 0.010 2.000 0.595 0.100 BSC 0.600 BSC 0.300 BSC 0.150 0.050 0.025 -40 0.160 0.070 --MAX 0.225 0.026 0.065 0.012 2.096 0.620 Note: All dimensions in inches Because of package size, constant acceleration is less than 3,000 g’s. 01.06.05 REV 4 All data sheets are subject to change without notice 11 ©2005 Maxwell Technologies. All rights reserved. 512Kb (32K x 16-bit) - OTP EPROM MCM Important Notice: 27C1512T These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts. Memory 01.06.05 REV 4 All data sheets are subject to change without notice 12 ©2005 Maxwell Technologies. All rights reserved. 512Kb (32K x 16-bit) - OTP EPROM MCM Product Ordering Options Model Number 27C1512T RP D X Feature 27C1512T Option Details Screening Flow Multi Chip Module (MCM) K1= Maxwell Self-Defined Class K H1= Maxwell Self-Defined Class H I = Industrial (testing @ -55°C, +25°C, +125°C) E = Engineering (testing @ +25°C) Memory Package D = Dual In-line Package (DIP) Radiation Feature RP = RAD-PAK® package Base Product Nomenclature 512K OneTime Programmable Electrically Programmable Read Only Memory 1) Products are manufactured and screened to Maxwell Technologies self-defined Class Hand Class K flows. 01.06.05 REV 4 All data sheets are subject to change without notice 13 ©2005 Maxwell Technologies. All rights reserved.